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************************** INSTANTIATION **********************************
.subckt mhd20n06G 10 20 30
*
* 10 = Drain 20 = Gate 30 = Source
*
******************************************************************************
*
*------------------------ EXTERNAL PARASITICS --------------------------------
* PACKAGE INDUCTANCE
*
LDRAIN 10 11 4.5e-09
LGATE 20 21 7.5e-09
LSOURCE 30 31 7.5e-09
*
* RESISTANCES
*
RDRAIN1 4 11 0.02023 TC=0.01033,-1.10923e-06
RDRAIN2 4 5 1e-06 TC=0.01033,-1.10923e-06
RSOURCE 31 6 0.004 TC=-0.0178,8.03093e-05
RDBODY 8 30 0.0102 TC=0.001754,3.88813e-06
*
RGATE 21 2 5
*
*--------------------------------------------------------------------------
*
*--------------- CAPACITANCES AND BODY DIODE ------------------------------
*
DBODY 8 11 DBODY
DGD 3 11 DGD
CGDMAX 2 3 1.7e-09
RGDMAX 2 3 1e+08
CGS 2 6 5.4e-10
*
*--------------------------------------------------------------------------
*
*----------------------- CORE MOSFET --------------------------------------
*
M1 5 2 6 6 MAIN
*
*--------------------------------------------------------------------------
*
.MODEL MAIN NMOS (
+LEVEL = 3
+VTO = 3.8
+KP = 16.2
+GAMMA = 3
+PHI = 0.6
+LAMBDA = 0.00275
+RD = 0
+RS = 0
+CBD = 0
+CBS = 0
+IS = 1e-14
+PB = 0.8
+CGSO = 0
+CGDO = 0
+CGBO = 0
+RSH = 0
+CJ = 0
+MJ = 0.5
+CJSW = 0
+MJSW = 0.33
+JS = 1e-14
+TOX = 1e-07
+NSUB = 1e+15
+NSS = 0
+NFS = 6.668e+11
+TPG = 1
+XJ = 0
+LD = 0
+UO = 600
+UCRIT = 1000
+UEXP = 0
+UTRA = 0
+VMAX = 0
+NEFF = 1
+KF = 0
+AF = 1
+FC = 0.5
+DELTA = 0
+THETA = 0
+ETA = 2000
+KAPPA = 0.2)
*
*--------------------------------------------------------------------------
*
.MODEL DGD D (
+IS = 1e-15
+RS = 0
+N = 1000
+TT = 0
+CJO = 5.291e-10
+VJ = 1.642
+M = 0.8287
+EG = 1.11
+XTI = 3
+KF = 0
+AF = 1
+FC = 0.5
+BV = 10000
+IBV = 0.001)
*
*--------------------------------------------------------------------------
*
.MODEL DBODY D (
+IS = 1.341e-12
+RS = 0
+N = 1.007
+TT = 1e-08
+CJO = 8.433e-10
+VJ = 0.9657
+M = 0.5177
+EG = 1.11
+XTI = 3.7
+KF = 0
+AF = 1
+FC = 0.5
+BV = 68.29
+IBV = 0.00025)
.ENDS
***** BERKLEY 3C.X, 3D.X AND HSPICE(tm) SIMULATORS ***************************
************************** INSTANTIATION **********************************
.subckt mhd20n06C 10 20 30
*
* 10 = Drain 20 = Gate 30 = Source
*
******************************************************************************
*
*------------------------ EXTERNAL PARASITICS --------------------------------
* PACKAGE INDUCTANCE
*
LDRAIN 10 11 4.5e-09
LGATE 20 21 7.5e-09
LSOURCE 30 31 7.5e-09
*
* RESISTANCES
*
RDRAIN1 4 11 0.02023 RDRAIN
RDRAIN2 4 5 1e-06 RDRAIN
RSOURCE 31 6 0.004 RSOURCE
RDBODY 8 30 0.0102 RDBODY
*
RGATE 21 2 5
*
*--------------------------------------------------------------------------
*
*--------------- CAPACITANCES AND BODY DIODE ------------------------------
*
DBODY 8 11 DBODY
DGD 3 11 DGD
CGDMAX 2 3 1.7e-09
RGDMAX 2 3 1e+08
CGS 2 6 5.4e-10
*
*--------------------------------------------------------------------------
*
*----------------------- CORE MOSFET --------------------------------------
*
M1 5 2 6 6 MAIN
*
*--------------------------------------------------------------------------
*
*.MODEL RDRAIN R (
*+TC1 = 0.01033
*+TC2 = -1.10923e-06)
*
*.MODEL RSOURCE R (
*+TC1 = -0.0178
*+TC2 = 8.03093e-05)
*
*.MODEL RDBODY R (
*+TC1 = 0.001754
*+TC2 = 3.88813e-06)
*
*
.MODEL MAIN NMOS (
+LEVEL = 3
+VTO = 3.8
+KP = 16.2
+GAMMA = 3
+PHI = 0.6
+LAMBDA = 0.00275
+RD = 0
+RS = 0
+CBD = 0
+CBS = 0
+IS = 1e-14
+PB = 0.8
+CGSO = 0
+CGDO = 0
+CGBO = 0
+RSH = 0
+CJ = 0
+MJ = 0.5
+CJSW = 0
+MJSW = 0.33
+JS = 1e-14
+TOX = 1e-07
+NSUB = 1e+15
+NSS = 0
+NFS = 6.668e+11
+TPG = 1
+XJ = 0
+LD = 0
+UO = 600
+UCRIT = 1000
+UEXP = 0
+UTRA = 0
+VMAX = 0
+NEFF = 1
+KF = 0
+AF = 1
+FC = 0.5
+DELTA = 0
+THETA = 0
+ETA = 2000
+KAPPA = 0.2)
*
*--------------------------------------------------------------------------
*
.MODEL DGD D (
+IS = 1e-15
+RS = 0
+N = 1000
+TT = 0
+CJO = 5.291e-10
+VJ = 1.642
+M = 0.8287
+EG = 1.11
+XTI = 3
+KF = 0
+AF = 1
+FC = 0.5
+BV = 10000
+IBV = 0.001)
*
*--------------------------------------------------------------------------
*
.MODEL DBODY D (
+IS = 1.341e-12
+RS = 0
+N = 1.007
+TT = 1e-08
+CJO = 8.433e-10
+VJ = 0.9657
+M = 0.5177
+EG = 1.11
+XTI = 3.7
+KF = 0
+AF = 1
+FC = 0.5
+BV = 68.29
+IBV = 0.00025)
.ENDS
***** MICROSIM PSPICE(tm) SIMULATORS *****************************************
************************** INSTANTIATION **********************************
.subckt mhd20n06P 10 20 30
*
* 10 = Drain 20 = Gate 30 = Source
*
******************************************************************************
*
*------------------------ EXTERNAL PARASITICS --------------------------------
* PACKAGE INDUCTANCE
*
LDRAIN 10 11 4.5e-09
LGATE 20 21 7.5e-09
LSOURCE 30 31 7.5e-09
*
* RESISTANCES
*
RDRAIN1 4 11 RDRAIN 0.02023
RDRAIN2 4 5 RDRAIN 1e-06
RSOURCE 31 6 RSOURCE 0.004
RDBODY 8 30 RDBODY 0.0102
*
RGATE 21 2 5
*
*--------------------------------------------------------------------------
*
*--------------- CAPACITANCES AND BODY DIODE ------------------------------
*
DBODY 8 11 DBODY
DGD 3 11 DGD
CGDMAX 2 3 1.7e-09
RGDMAX 2 3 1e+08
CGS 2 6 5.4e-10
*
*--------------------------------------------------------------------------
*
*----------------------- CORE MOSFET --------------------------------------
*
M1 5 2 6 6 MAIN
*
*--------------------------------------------------------------------------
*
.MODEL RDRAIN RES (
+TC1 = 0.01033
+TC2 = -1.10923e-06)
*
.MODEL RSOURCE RES (
+TC1 = -0.0178
+TC2 = 8.03093e-05)
*
.MODEL RDBODY RES (
+TC1 = 0.001754
+TC2 = 3.88813e-06)
*
*
.MODEL MAIN NMOS (
+LEVEL = 3
+VTO = 3.8
+KP = 16.2
+GAMMA = 3
+PHI = 0.6
+LAMBDA = 0.00275
+RD = 0
+RS = 0
+CBD = 0
+CBS = 0
+IS = 1e-14
+PB = 0.8
+CGSO = 0
+CGDO = 0
+CGBO = 0
+RSH = 0
+CJ = 0
+MJ = 0.5
+CJSW = 0
+MJSW = 0.33
+JS = 1e-14
+TOX = 1e-07
+NSUB = 1e+15
+NSS = 0
+NFS = 6.668e+11
+TPG = 1
+XJ = 0
+LD = 0
+UO = 600
+UCRIT = 1000
+UEXP = 0
+UTRA = 0
+VMAX = 0
+NEFF = 1
+KF = 0
+AF = 1
+FC = 0.5
+DELTA = 0
+THETA = 0
+ETA = 2000
+KAPPA = 0.2)
*
*--------------------------------------------------------------------------
*
.MODEL DGD D (
+IS = 1e-15
+RS = 0
+N = 1000
+TT = 0
+CJO = 5.291e-10
+VJ = 1.642
+M = 0.8287
+EG = 1.11
+XTI = 3
+KF = 0
+AF = 1
+FC = 0.5
+BV = 10000
+IBV = 0.001)
*
*--------------------------------------------------------------------------
*
.MODEL DBODY D (
+IS = 1.341e-12
+RS = 0
+N = 1.007
+TT = 1e-08
+CJO = 8.433e-10
+VJ = 0.9657
+M = 0.5177
+EG = 1.11
+XTI = 3.7
+KF = 0
+AF = 1
+FC = 0.5
+BV = 68.29
+IBV = 0.00025)
.ENDS
*******************************************************************************
* *
* *
* *
* ############################################################# *
* # # *
* # MTD3055V # *
* # # *
* # Motorola TMOS Power FET # *
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