📄 jfet.c
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/**********Copyright 1990 Regents of the University of California. All rights reserved.Author: 1985 Thomas L. QuarlesSydney University mods Copyright(c) 1989 Anthony E. Parker, David J. Skellern Laboratory for Communication Science Engineering Sydney University Department of Electrical Engineering, Australia**********/#include "spice.h"#include <stdio.h>#include "ifsim.h"#include "devdefs.h"#include "jfetdefs.h"#include "suffix.h"IFparm JFETpTable[] = { /* device parameters */ IOPU("off", JFET_OFF, IF_FLAG, "Device initially off"), IOPAU("ic", JFET_IC, IF_REALVEC,"Initial VDS,VGS vector"), IOPU("area", JFET_AREA, IF_REAL, "Area factor"), IOPAU("ic-vds", JFET_IC_VDS, IF_REAL, "Initial D-S voltage"), IOPAU("ic-vgs", JFET_IC_VGS, IF_REAL, "Initial G-S volrage"), IOPU("temp", JFET_TEMP, IF_REAL, "Instance temperature"), OPU("drain-node", JFET_DRAINNODE, IF_INTEGER,"Number of drain node"), OPU("gate-node", JFET_GATENODE, IF_INTEGER,"Number of gate node"), OPU("source-node", JFET_SOURCENODE, IF_INTEGER,"Number of source node"), OPU("drain-prime-node", JFET_DRAINPRIMENODE, IF_INTEGER,"Internal drain node"), OPU("source-prime-node",JFET_SOURCEPRIMENODE,IF_INTEGER, "Internal source node"), OP("vgs", JFET_VGS, IF_REAL, "Voltage G-S"), OP("vgd", JFET_VGD, IF_REAL, "Voltage G-D"), OP("ig", JFET_CG, IF_REAL, "Current at gate node"), OP("id", JFET_CD, IF_REAL, "Current at drain node"), OP("is", JFET_CS, IF_REAL, "Source current"), OP("igd", JFET_CGD, IF_REAL, "Current G-D"), OP("gm", JFET_GM, IF_REAL, "Transconductance"), OP("gds", JFET_GDS, IF_REAL, "Conductance D-S"), OP("ggs", JFET_GGS, IF_REAL, "Conductance G-S"), OP("ggd", JFET_GGD, IF_REAL, "Conductance G-D"), OPU("qgs", JFET_QGS, IF_REAL,"Charge storage G-S junction"), OPU("qgd", JFET_QGD, IF_REAL,"Charge storage G-D junction"), OPU("cqgs",JFET_CQGS, IF_REAL, "Capacitance due to charge storage G-S junction"), OPU("cqgd",JFET_CQGD, IF_REAL, "Capacitance due to charge storage G-D junction"), OPU("p", JFET_POWER,IF_REAL,"Power dissipated by the JFET"),};IFparm JFETmPTable[] = { /* model parameters */ OP("type", JFET_MOD_TYPE, IF_STRING, "N-type or P-type JFET model"), IOP("njf", JFET_MOD_NJF, IF_FLAG,"N type JFET model"), IOP("pjf", JFET_MOD_PJF, IF_FLAG,"P type JFET model"), IOP("vt0", JFET_MOD_VTO, IF_REAL,"Threshold voltage"), IOPR("vto", JFET_MOD_VTO, IF_REAL,"Threshold voltage"), IOP("beta", JFET_MOD_BETA, IF_REAL,"Transconductance parameter"), IOP("lambda", JFET_MOD_LAMBDA, IF_REAL,"Channel length modulation param."), IOP("rd", JFET_MOD_RD, IF_REAL,"Drain ohmic resistance"), OPU("gd", JFET_MOD_DRAINCONDUCT, IF_REAL,"Drain conductance"), IOP("rs", JFET_MOD_RS, IF_REAL,"Source ohmic resistance"), OPU("gs",JFET_MOD_SOURCECONDUCT,IF_REAL,"Source conductance"), IOPA("cgs", JFET_MOD_CGS, IF_REAL,"G-S junction capactance"), IOPA("cgd", JFET_MOD_CGD, IF_REAL,"G-D junction cap"), IOP("pb", JFET_MOD_PB, IF_REAL,"Gate junction potential"), IOP("is", JFET_MOD_IS, IF_REAL,"Gate junction saturation current"), IOP("fc", JFET_MOD_FC, IF_REAL,"Forward bias junction fit parm."), /* Modification for Sydney University JFET model */ IOP("b", JFET_MOD_B, IF_REAL,"Doping tail parameter"), /* end Sydney University mod. */ IOPU("tnom", JFET_MOD_TNOM, IF_REAL,"parameter measurement temperature"), IOP("kf", JFET_MOD_KF,IF_REAL,"Flicker Noise Coefficient"), IOP("af", JFET_MOD_AF,IF_REAL,"Flicker Noise Exponent")};char *JFETnames[] = { "Drain", "Gate", "Source"};int JFETnSize = NUMELEMS(JFETnames);int JFETpTSize = NUMELEMS(JFETpTable);int JFETmPTSize = NUMELEMS(JFETmPTable);int JFETiSize = sizeof(JFETinstance);int JFETmSize = sizeof(JFETmodel);
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