📄 mos6mask.c
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/**********Copyright 1990 Regents of the University of California. All rights reserved.Author: 1989 Takayasu Sakurai**********/#include "spice.h"#include <stdio.h>#include "const.h"#include "util.h"#include "ifsim.h"#include "mos6defs.h"#include "sperror.h"#include "suffix.h"intMOS6mAsk(ckt,inModel,param,value) CKTcircuit *ckt; GENmodel *inModel; int param; IFvalue *value;{ register MOS6model *model = (MOS6model *)inModel; switch(param) { case MOS6_MOD_TNOM: value->rValue = model->MOS6tnom; break; case MOS6_MOD_VTO: value->rValue = model->MOS6vt0; break; case MOS6_MOD_KV: value->rValue = model->MOS6kv; break; case MOS6_MOD_NV: value->rValue = model->MOS6nv; break; case MOS6_MOD_KC: value->rValue = model->MOS6kc; break; case MOS6_MOD_NC: value->rValue = model->MOS6nc; break; case MOS6_MOD_NVTH: value->rValue = model->MOS6nvth; break; case MOS6_MOD_PS: value->rValue = model->MOS6ps; break; case MOS6_MOD_GAMMA: value->rValue = model->MOS6gamma; break; case MOS6_MOD_GAMMA1: value->rValue = model->MOS6gamma1; break; case MOS6_MOD_SIGMA: value->rValue = model->MOS6sigma; break; case MOS6_MOD_PHI: value->rValue = model->MOS6phi; break; case MOS6_MOD_LAMBDA: value->rValue = model->MOS6lambda; break; case MOS6_MOD_LAMDA0: value->rValue = model->MOS6lamda0; break; case MOS6_MOD_LAMDA1: value->rValue = model->MOS6lamda1; break; case MOS6_MOD_RD: value->rValue = model->MOS6drainResistance; break; case MOS6_MOD_RS: value->rValue = model->MOS6sourceResistance; break; case MOS6_MOD_CBD: value->rValue = model->MOS6capBD; break; case MOS6_MOD_CBS: value->rValue = model->MOS6capBS; break; case MOS6_MOD_IS: value->rValue = model->MOS6jctSatCur; break; case MOS6_MOD_PB: value->rValue = model->MOS6bulkJctPotential; break; case MOS6_MOD_CGSO: value->rValue = model->MOS6gateSourceOverlapCapFactor; break; case MOS6_MOD_CGDO: value->rValue = model->MOS6gateDrainOverlapCapFactor; break; case MOS6_MOD_CGBO: value->rValue = model->MOS6gateBulkOverlapCapFactor; break; case MOS6_MOD_CJ: value->rValue = model->MOS6bulkCapFactor; break; case MOS6_MOD_MJ: value->rValue = model->MOS6bulkJctBotGradingCoeff; break; case MOS6_MOD_CJSW: value->rValue = model->MOS6sideWallCapFactor; break; case MOS6_MOD_MJSW: value->rValue = model->MOS6bulkJctSideGradingCoeff; break; case MOS6_MOD_JS: value->rValue = model->MOS6jctSatCurDensity; break; case MOS6_MOD_TOX: value->rValue = model->MOS6oxideThickness; break; case MOS6_MOD_LD: value->rValue = model->MOS6latDiff; break; case MOS6_MOD_RSH: value->rValue = model->MOS6sheetResistance; break; case MOS6_MOD_U0: value->rValue = model->MOS6surfaceMobility; break; case MOS6_MOD_FC: value->rValue = model->MOS6fwdCapDepCoeff; break; case MOS6_MOD_NSS: value->rValue = model->MOS6surfaceStateDensity; break; case MOS6_MOD_NSUB: value->rValue = model->MOS6substrateDoping; break; case MOS6_MOD_TPG: value->iValue = model->MOS6gateType; break; case MOS6_MOD_TYPE: if (model->MOS6type > 0) value->sValue = "nmos"; else value->sValue = "pmos"; break; default: return(E_BADPARM); } return(OK);}
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