mos1defs.h

spice中支持多层次元件模型仿真的可单独运行的插件源码

/**********
Copyright 1990 Regents of the University of California.  All rights reserved.
Author: 1985 Thomas L. Quarles
**********/

#ifndef MOS1
#define MOS1

#include "ifsim.h"
#include "cktdefs.h"
#include "gendefs.h"
#include "complex.h"
#include "noisedef.h"

/* declarations for level 1 MOSFETs */

/* information needed for each instance */

typedef struct sMOS1instance {
    struct sMOS1model *sMOS1modPtr; /* backpointer to model */
    struct sMOS1instance *MOS1nextInstance;  /* pointer to next instance of
                                              *current model*/
    IFuid MOS1name; /* pointer to character string naming this instance */
    int MOS1owner;  /* number of owner process */
    int MOS1states;     /* index into state table for this device */

    int MOS1dNode;  /* number of the gate node of the mosfet */
    int MOS1gNode;  /* number of the gate node of the mosfet */
    int MOS1sNode;  /* number of the source node of the mosfet */
    int MOS1bNode;  /* number of the bulk node of the mosfet */
    int MOS1dNodePrime; /* number of the internal drain node of the mosfet */
    int MOS1sNodePrime; /* number of the internal source node of the mosfet */

    double MOS1l;   /* the length of the channel region */
    double MOS1w;   /* the width of the channel region */
    double MOS1drainArea;   /* the area of the drain diffusion */
    double MOS1sourceArea;  /* the area of the source diffusion */
    double MOS1drainSquares;    /* the length of the drain in squares */
    double MOS1sourceSquares;   /* the length of the source in squares */
    double MOS1drainPerimiter;
    double MOS1sourcePerimiter;
    double MOS1sourceConductance;   /*conductance of source(or 0):set in setup*/
    double MOS1drainConductance;    /*conductance of drain(or 0):set in setup*/
    double MOS1temp;    /* operating temperature of this instance */

    double MOS1tTransconductance;   /* temperature corrected transconductance*/
    double MOS1tSurfMob;            /* temperature corrected surface mobility */
    double MOS1tPhi;                /* temperature corrected Phi */
    double MOS1tVto;                /* temperature corrected Vto */
    double MOS1tSatCur;             /* temperature corrected saturation Cur. */
    double MOS1tSatCurDens; /* temperature corrected saturation Cur. density*/
    double MOS1tCbd;                /* temperature corrected B-D Capacitance */
    double MOS1tCbs;                /* temperature corrected B-S Capacitance */
    double MOS1tCj;         /* temperature corrected Bulk bottom Capacitance */
    double MOS1tCjsw;       /* temperature corrected Bulk side Capacitance */
    double MOS1tBulkPot;    /* temperature corrected Bulk potential */
    double MOS1tDepCap;     /* temperature adjusted transition point in */
                            /* the cureve matching Fc * Vj */
    double MOS1tVbi;        /* temperature adjusted Vbi */

    double MOS1icVBS;   /* initial condition B-S voltage */
    double MOS1icVDS;   /* initial condition D-S voltage */
    double MOS1icVGS;   /* initial condition G-S voltage */
    double MOS1von;
    double MOS1vdsat;
    double MOS1sourceVcrit; /* Vcrit for pos. vds */
    double MOS1drainVcrit;  /* Vcrit for pos. vds */
    double MOS1cd;
    double MOS1cbs;
    double MOS1cbd;
    double MOS1gmbs;
    double MOS1gm;
    double MOS1gds;
    double MOS1gbd;
    double MOS1gbs;
    double MOS1capbd;
    double MOS1capbs;
    double MOS1Cbd;
    double MOS1Cbdsw;
    double MOS1Cbs;
    double MOS1Cbssw;
    double MOS1f2d;
    double MOS1f3d;
    double MOS1f4d;
    double MOS1f2s;
    double MOS1f3s;
    double MOS1f4s;

/*
 * naming convention:
 * x = vgs
 * y = vbs
 * z = vds
 * cdr = cdrain
 */

#define	MOS1NDCOEFFS	30

#ifndef NODISTO
	double MOS1dCoeffs[MOS1NDCOEFFS];
#else /* NODISTO */
	double *MOS1dCoeffs;
#endif /* NODISTO */

#ifndef CONFIG

#define	capbs2		MOS1dCoeffs[0]
#define	capbs3		MOS1dCoeffs[1]
#define	capbd2		MOS1dCoeffs[2]
#define	capbd3		MOS1dCoeffs[3]
#define	gbs2		MOS1dCoeffs[4]
#define	gbs3		MOS1dCoeffs[5]
#define	gbd2		MOS1dCoeffs[6]
#define	gbd3		MOS1dCoeffs[7]
#define	capgb2		MOS1dCoeffs[8]
#define	capgb3		MOS1dCoeffs[9]
#define	cdr_x2		MOS1dCoeffs[10]
#define	cdr_y2		MOS1dCoeffs[11]
#define	cdr_z2		MOS1dCoeffs[12]
#define	cdr_xy		MOS1dCoeffs[13]
#define	cdr_yz		MOS1dCoeffs[14]
#define	cdr_xz		MOS1dCoeffs[15]
#define	cdr_x3		MOS1dCoeffs[16]
#define	cdr_y3		MOS1dCoeffs[17]
#define	cdr_z3		MOS1dCoeffs[18]
#define	cdr_x2z		MOS1dCoeffs[19]
#define	cdr_x2y		MOS1dCoeffs[20]
#define	cdr_y2z		MOS1dCoeffs[21]
#define	cdr_xy2		MOS1dCoeffs[22]
#define	cdr_xz2		MOS1dCoeffs[23]
#define	cdr_yz2		MOS1dCoeffs[24]
#define	cdr_xyz		MOS1dCoeffs[25]
#define	capgs2		MOS1dCoeffs[26]
#define	capgs3		MOS1dCoeffs[27]
#define	capgd2		MOS1dCoeffs[28]
#define	capgd3		MOS1dCoeffs[29]

#endif

#define MOS1RDNOIZ	0
#define MOS1RSNOIZ   1
#define MOS1IDNOIZ       2
#define MOS1FLNOIZ 3
#define MOS1TOTNOIZ    4

#define MOS1NSRCS     5     /* the number of MOS1FET noise sources*/

#ifndef NONOISE
    double MOS1nVar[NSTATVARS][MOS1NSRCS];
#else /* NONOISE */
	double **MOS1nVar;
#endif /* NONOISE */

    int MOS1mode;       /* device mode : 1 = normal, -1 = inverse */


    unsigned MOS1off:1;  /* non-zero to indicate device is off for dc analysis*/
    unsigned MOS1tempGiven :1;  /* instance temperature specified */
    unsigned MOS1lGiven :1;
    unsigned MOS1wGiven :1;
    unsigned MOS1drainAreaGiven :1;
    unsigned MOS1sourceAreaGiven    :1;
    unsigned MOS1drainSquaresGiven  :1;
    unsigned MOS1sourceSquaresGiven :1;
    unsigned MOS1drainPerimiterGiven    :1;
    unsigned MOS1sourcePerimiterGiven   :1;
    unsigned MOS1dNodePrimeSet  :1;
    unsigned MOS1sNodePrimeSet  :1;
    unsigned MOS1icVBSGiven :1;
    unsigned MOS1icVDSGiven :1;
    unsigned MOS1icVGSGiven :1;
    unsigned MOS1vonGiven   :1;
    unsigned MOS1vdsatGiven :1;
    unsigned MOS1modeGiven  :1;


    double *MOS1DdPtr;      /* pointer to sparse matrix element at
                                     * (Drain node,drain node) */
    double *MOS1GgPtr;      /* pointer to sparse matrix element at
                                     * (gate node,gate node) */
    double *MOS1SsPtr;      /* pointer to sparse matrix element at
                                     * (source node,source node) */
    double *MOS1BbPtr;      /* pointer to sparse matrix element at
                                     * (bulk node,bulk node) */
    double *MOS1DPdpPtr;    /* pointer to sparse matrix element at
                                     * (drain prime node,drain prime node) */
    double *MOS1SPspPtr;    /* pointer to sparse matrix element at
                                     * (source prime node,source prime node) */
    double *MOS1DdpPtr;     /* pointer to sparse matrix element at
                                     * (drain node,drain prime node) */
    double *MOS1GbPtr;      /* pointer to sparse matrix element at
                                     * (gate node,bulk node) */
    double *MOS1GdpPtr;     /* pointer to sparse matrix element at
                                     * (gate node,drain prime node) */
    double *MOS1GspPtr;     /* pointer to sparse matrix element at
                                     * (gate node,source prime node) */
    double *MOS1SspPtr;     /* pointer to sparse matrix element at
                                     * (source node,source prime node) */
    double *MOS1BdpPtr;     /* pointer to sparse matrix element at
                                     * (bulk node,drain prime node) */
    double *MOS1BspPtr;     /* pointer to sparse matrix element at
                                     * (bulk node,source prime node) */
    double *MOS1DPspPtr;    /* pointer to sparse matrix element at
                                     * (drain prime node,source prime node) */
    double *MOS1DPdPtr;     /* pointer to sparse matrix element at
                                     * (drain prime node,drain node) */
    double *MOS1BgPtr;      /* pointer to sparse matrix element at
                                     * (bulk node,gate node) */
    double *MOS1DPgPtr;     /* pointer to sparse matrix element at
                                     * (drain prime node,gate node) */

    double *MOS1SPgPtr;     /* pointer to sparse matrix element at
                                     * (source prime node,gate node) */
    double *MOS1SPsPtr;     /* pointer to sparse matrix element at
                                     * (source prime node,source node) */
    double *MOS1DPbPtr;     /* pointer to sparse matrix element at
                                     * (drain prime node,bulk node) */
    double *MOS1SPbPtr;     /* pointer to sparse matrix element at
                                     * (source prime node,bulk node) */
    double *MOS1SPdpPtr;    /* pointer to sparse matrix element at
                                     * (source prime node,drain prime node) */

    int  MOS1senParmNo;   /* parameter # for sensitivity use;
            set equal to 0  if  neither length
            nor width of the mosfet is a design
            parameter */
    unsigned MOS1sens_l :1;   /* field which indicates whether  
            length of the mosfet is a design
            parameter or not */
    unsigned MOS1sens_w :1;   /* field which indicates whether  
            width of the mosfet is a design
            parameter or not */
    unsigned MOS1senPertFlag :1; /* indictes whether the the 
            parameter of the particular instance is 
            to be perturbed */
    double MOS1cgs;
    double MOS1cgd;
    double MOS1cgb;
    double *MOS1sens;

#define MOS1senCgs MOS1sens /* contains pertured values of cgs */
#define MOS1senCgd MOS1sens + 6 /* contains perturbed values of cgd*/
#define MOS1senCgb MOS1sens + 12 /* contains perturbed values of cgb*/
#define MOS1senCbd MOS1sens + 18 /* contains perturbed values of cbd*/
#define MOS1senCbs MOS1sens + 24 /* contains perturbed values of cbs*/
#define MOS1senGds MOS1sens + 30 /* contains perturbed values of gds*/
#define MOS1senGbs MOS1sens + 36 /* contains perturbed values of gbs*/
#define MOS1senGbd MOS1sens + 42 /* contains perturbed values of gbd*/
#define MOS1senGm MOS1sens + 48 /* contains perturbed values of gm*/
#define MOS1senGmbs MOS1sens + 54 /* contains perturbed values of gmbs*/
#define MOS1dphigs_dl MOS1sens + 60
#define MOS1dphigd_dl MOS1sens + 61
#define MOS1dphigb_dl MOS1sens + 62
#define MOS1dphibs_dl MOS1sens + 63
#define MOS1dphibd_dl MOS1sens + 64
#define MOS1dphigs_dw MOS1sens + 65