spice.txt

spice中支持多层次元件模型仿真的可单独运行的插件源码

SUBJECT: .SUBCKT Line
TITLE: .SUBCKT Line
TEXT: H
TEXT: H _2._4._1.  ._S_U_B_C_K_T _L_i_n_e
TEXT: H
TEXT: H _G_e_n_e_r_a_l _f_o_r_m:
TEXT: H
TEXT: H     .SUBCKT subnam N1 <N2 N3 ...>
TEXT: H
TEXT: H
TEXT: H _E_x_a_m_p_l_e_s:
TEXT: H
TEXT: H     .SUBCKT OPAMP 1 2 3 4
TEXT: H
TEXT: H
TEXT: H
TEXT: H      A circuit definition is  begun  with  a  .SUBCKT  line.
TEXT: H SUBNAM  is  the  subcircuit  name,  and  N1, N2, ... are the
TEXT: H external nodes, which cannot be zero.  The group of  element
TEXT: H lines  which  immediately follow the .SUBCKT line define the
TEXT: H subcircuit.  The last line in a subcircuit definition is the
TEXT: H .ENDS line (see below).  Control lines may not appear within
TEXT: H a subcircuit definition;   however,  subcircuit  definitions
TEXT: H may contain anything else, including other subcircuit defin-
TEXT: H itions, device models, and  subcircuit  calls  (see  below).
TEXT: H Note  that  any  device  models  or  subcircuit  definitions
TEXT: H included as part of a  subcircuit  definition  are  strictly
TEXT: H local  (i.e., such models and definitions are not known out-
TEXT: H side the subcircuit definition).  Also,  any  element  nodes
TEXT: H not  included  on  the .SUBCKT line are strictly local, with
TEXT: H the exception of 0 (ground) which is always global.
TEXT: H
TEXT: H

SUBJECT: .ENDS Line
TITLE: .ENDS Line
TEXT: H
TEXT: H _2._4._2.  ._E_N_D_S _L_i_n_e
TEXT: H
TEXT: H _G_e_n_e_r_a_l _f_o_r_m:
TEXT: H
TEXT: H     .ENDS <SUBNAM>
TEXT: H
TEXT: H
TEXT: H _E_x_a_m_p_l_e_s:
TEXT: H
TEXT: H     .ENDS OPAMP
TEXT: H
TEXT: H
TEXT: H      The "Ends" line must be the last one for  any  sub-
TEXT: H circuit  definition.   The subcircuit name, if included,
TEXT: H indicates which subcircuit definition is being terminat-
TEXT: H ed;   if omitted, all subcircuits being defined are ter-
TEXT: H minated.  The name is needed only when nested subcircuit
TEXT: H definitions are being made.
TEXT: H
TEXT: H
TEXT: H

SUBJECT: Subcircuit Calls
TITLE: Subcircuit Calls
TEXT: H
TEXT: H _2._4._3.  _S_u_b_c_i_r_c_u_i_t _C_a_l_l_s
TEXT: H
TEXT: H _G_e_n_e_r_a_l _f_o_r_m:
TEXT: H
TEXT: H     XYYYYYYY N1 <N2 N3 ...> SUBNAM
TEXT: H
TEXT: H
TEXT: H _E_x_a_m_p_l_e_s:
TEXT: H
TEXT: H     X1 2 4 17 3 1 MULTI
TEXT: H
TEXT: H
TEXT: H      Subcircuits  are  used  in  SPICE   by   specifying
TEXT: H pseudo-elements beginning with the letter X, followed by
TEXT: H the circuit nodes to be used in  expanding  the  subcir-
TEXT: H cuit.
TEXT: H
TEXT: H

SUBJECT: COMBINING FILES
TITLE: COMBINING FILES: .INCLUDE LINES
TEXT: H
TEXT: H _2._5.  _C_O_M_B_I_N_I_N_G _F_I_L_E_S: ._I_N_C_L_U_D_E _L_I_N_E_S
TEXT: H
TEXT: H _G_e_n_e_r_a_l _f_o_r_m:
TEXT: H
TEXT: H     .INCLUDE _f_i_l_e_n_a_m_e
TEXT: H
TEXT: H
TEXT: H _E_x_a_m_p_l_e_s:
TEXT: H
TEXT: H     .INCLUDE /users/spice/common/wattmeter.cir
TEXT: H
TEXT: H
TEXT: H      Frequently, portions of circuit  descriptions  will  be
TEXT: H reused  in  several  input  files,  particularly with common
TEXT: H models and  subcircuits.   In  any  spice  input  file,  the
TEXT: H ".include"  line  may  be used to copy some other file as if
TEXT: H that second file appeared in place of the ".include" line in
TEXT: H the original file.  There is no restriction on the file name
TEXT: H imposed by spice beyond those imposed by the local operating
TEXT: H system.

SUBJECT: CIRCUIT ELEMENTS AND MODELS
TITLE: CIRCUIT ELEMENTS AND MODELS
TEXT: H
TEXT: H _3.  _C_I_R_C_U_I_T _E_L_E_M_E_N_T_S _A_N_D _M_O_D_E_L_S
TEXT: H
TEXT: H
TEXT: H      Data  fields  that  are  enclosed  in   less-than   and
TEXT: H greater-than  signs  ('<  >')  are  optional.  All indicated
TEXT: H punctuation (parentheses, equal signs, etc.) is optional but
TEXT: H indicate  the  presence  of  any delimiter.  Further, future
TEXT: H implementations may require the punctuation  as  stated.   A
TEXT: H consistent  style  adhering  to  the  punctuation shown here
TEXT: H makes the input  easier  to  understand.   With  respect  to
TEXT: H branch voltages and currents, SPICE uniformly uses the asso-
TEXT: H ciated reference convention (current flows in the  direction
TEXT: H of voltage drop).
SUBTOPIC: SPICE:ELEMENTARY DEVICES
SUBTOPIC: SPICE:VOLTAGE AND CURRENT SOURCES
SUBTOPIC: SPICE:TRANSMISSION LINES
SUBTOPIC: SPICE:TRANSISTORS AND DIODES

SUBJECT: ELEMENTARY DEVICES
TITLE: ELEMENTARY DEVICES
TEXT: H
TEXT: H _3._1.  _E_L_E_M_E_N_T_A_R_Y _D_E_V_I_C_E_S
TEXT: H
SUBTOPIC: SPICE:Resistors
SUBTOPIC: SPICE:Semiconductor Resistors
SUBTOPIC: SPICE:Semiconductor Resistor Model 
SUBTOPIC: SPICE:Capacitors
SUBTOPIC: SPICE:Semiconductor Capacitors
SUBTOPIC: SPICE:Semiconductor Capacitor Model 
SUBTOPIC: SPICE:Inductors
SUBTOPIC: SPICE:Coupled Inductors
SUBTOPIC: SPICE:Switches
SUBTOPIC: SPICE:Switch Model 

SUBJECT: Resistors
TITLE: Resistors
TEXT: H
TEXT: H _3._1._1.  _R_e_s_i_s_t_o_r_s
TEXT: H
TEXT: H _G_e_n_e_r_a_l _f_o_r_m:
TEXT: H
TEXT: H     RXXXXXXX N1 N2 VALUE
TEXT: H
TEXT: H
TEXT: H _E_x_a_m_p_l_e_s:
TEXT: H
TEXT: H     R1 1 2 100
TEXT: H     RC1 12 17 1K
TEXT: H
TEXT: H
TEXT: H      N1 and N2 are the two  element  nodes.   VALUE  is  the
TEXT: H resistance (in ohms) and may be positive or negative but not
TEXT: H zero.
TEXT: H
TEXT: H

SUBJECT: Semiconductor Resistors
TITLE: Semiconductor Resistors
TEXT: H
TEXT: H _3._1._2.  _S_e_m_i_c_o_n_d_u_c_t_o_r _R_e_s_i_s_t_o_r_s
TEXT: H
TEXT: H _G_e_n_e_r_a_l _f_o_r_m:
TEXT: H
TEXT: H     RXXXXXXX N1 N2 <VALUE> <MNAME> <L=LENGTH> <W=WIDTH> <TEMP=T>
TEXT: H
TEXT: H
TEXT: H _E_x_a_m_p_l_e_s:
TEXT: H
TEXT: H     RLOAD 2 10 10K
TEXT: H     RMOD 3 7 RMODEL L=10u W=1u
TEXT: H
TEXT: H
TEXT: H
TEXT: H      This is the more general form of the resistor presented
TEXT: H in  section  6.1,  and  allows  the  modeling of temperature
TEXT: H effects and for the calculation  of  the  actual  resistance
TEXT: H value from strictly geometric information and the specifica-
TEXT: H tions of the process.  If VALUE is specified,  it  overrides
TEXT: H the  geometric  information  and defines the resistance.  If
TEXT: H MNAME is specified, then the resistance  may  be  calculated
TEXT: H from  the  process  information  in  the model MNAME and the
TEXT: H given LENGTH and WIDTH.  If VALUE  is  not  specified,  then
TEXT: H MNAME  and LENGTH must be specified.  If WIDTH is not speci-
TEXT: H fied, then it is taken from the default width given  in  the
TEXT: H model.   The  (optional)  TEMP  value  is the temperature at
TEXT: H which this device is to operate, and overrides the  tempera-
TEXT: H ture specification on the .OPTION control line.
TEXT: H
TEXT: H

SUBJECT: Semiconductor Resistor Model 
TITLE: Semiconductor Resistor Model (R)
TEXT: H
TEXT: H _3._1._3.  _S_e_m_i_c_o_n_d_u_c_t_o_r _R_e_s_i_s_t_o_r _M_o_d_e_l (_R)
TEXT: H
TEXT: H
TEXT: H      The resistor model consists of  process-related  device
TEXT: H data  that  allow  the  resistance  to  be  calculated  from
TEXT: H geometric information and to be corrected  for  temperature.
TEXT: H The parameters available are:
TEXT: H
TEXT: H name     parameter                           units    default   example
TEXT: H
TEXT: H                                                o
TEXT: H TC1      first order temperature coeff.      Z/ C     0.0       -
TEXT: H                                                o 2
TEXT: H TC2      second order temperature coeff.     Z/ C     0.0       -
TEXT: H RSH      sheet resistance                    Z/[]     -         50
TEXT: H DEFW     default width                       meters   1e-6      2e-6
TEXT: H NARROW   narrowing due to side etching       meters   0.0       1e-7
TEXT: H                                              o
TEXT: H TNOM     parameter measurement temperature    C       27        50
TEXT: H
TEXT: H
TEXT: H
TEXT: H      The sheet resistance is used with the narrowing parame-
TEXT: H ter  and  L  and W from the resistor device to determine the
TEXT: H nominal resistance by the formula
TEXT: H
TEXT: H                              L - NARROW
TEXT: H                      R = RSH ----------
TEXT: H                              W - NARROW
TEXT: H
TEXT: H DEFW is used to supply a default value for W if one  is  not
TEXT: H specified  for the device.  If either RSH or L is not speci-
TEXT: H fied, then the standard default resistance value of 1k Z  is
TEXT: H used.  TNOM is used to override the circuit-wide value given
TEXT: H on the .OPTIONS control line where the  parameters  of  this
TEXT: H model  have been measured at a different temperature.  After
TEXT: H the nominal resistance is calculated,  it  is  adjusted  for
TEXT: H temperature by the formula:
TEXT: H
TEXT: H                                                   2
TEXT: H        R(T) = R(T ) [1 + TC1 (T - T ) + TC2 (T-T ) ]
TEXT: H                  0                 0            0
TEXT: H
TEXT: H
TEXT: H

SUBJECT: Capacitors
TITLE: Capacitors
TEXT: H
TEXT: H _3._1._4.  _C_a_p_a_c_i_t_o_r_s
TEXT: H
TEXT: H _G_e_n_e_r_a_l _f_o_r_m:
TEXT: H
TEXT: H     CXXXXXXX N+ N- VALUE <IC=INCOND>
TEXT: H
TEXT: H
TEXT: H _E_x_a_m_p_l_e_s:
TEXT: H
TEXT: H     CBYP 13 0 1UF
TEXT: H     COSC 17 23 10U IC=3V
TEXT: H
TEXT: H
TEXT: H      N+ and N- are the  positive  and  negative  element
TEXT: H nodes,   respectively.   VALUE  is  the  capacitance  in
TEXT: H Farads.
TEXT: H
TEXT: H
TEXT: H      The (optional) initial condition is the initial  (time-
TEXT: H zero)  value of capacitor voltage (in Volts).  Note that the
TEXT: H initial conditions (if any) apply 'only' if the  UIC  option
TEXT: H is specified on the .TRAN control line.
TEXT: H
TEXT: H

SUBJECT: Semiconductor Capacitors
TITLE: Semiconductor Capacitors
TEXT: H
TEXT: H _3._1._5.  _S_e_m_i_c_o_n_d_u_c_t_o_r _C_a_p_a_c_i_t_o_r_s
TEXT: H
TEXT: H _G_e_n_e_r_a_l _f_o_r_m:
TEXT: H
TEXT: H     CXXXXXXX N1 N2 <VALUE> <MNAME> <L=LENGTH> <W=WIDTH> <IC=VAL>
TEXT: H
TEXT: H
TEXT: H _E_x_a_m_p_l_e_s:
TEXT: H
TEXT: H     CLOAD 2 10 10P
TEXT: H     CMOD 3 7 CMODEL L=10u W=1u
TEXT: H
TEXT: H
TEXT: H
TEXT: H      This  is  the  more  general  form  of  the   Capacitor
TEXT: H presented  in section 6.2, and allows for the calculation of
TEXT: H the actual capacitance value from strictly geometric  infor-
TEXT: H mation  and  the specifications of the process.  If VALUE is
TEXT: H specified, it defines the capacitance.  If MNAME  is  speci-
TEXT: H fied,  then  the  capacitance is calculated from the process
TEXT: H information in the model MNAME  and  the  given  LENGTH  and
TEXT: H WIDTH.   If  VALUE  is  not specified, then MNAME and LENGTH
TEXT: H must be specified.  If WIDTH is not specified,  then  it  is
TEXT: H taken  from  the  default  width given in the model.  Either
TEXT: H VALUE or MNAME, LENGTH, and WIDTH may be specified, but  not
TEXT: H both sets.
TEXT: H
TEXT: H

SUBJECT: Semiconductor Capacitor Model 
TITLE: Semiconductor Capacitor Model (C)
TEXT: H
TEXT: H _3._1._6.  _S_e_m_i_c_o_n_d_u_c_t_o_r _C_a_p_a_c_i_t_o_r _M_o_d_e_l (_C)
TEXT: H
TEXT: H
TEXT: H      The capacitor model contains process  information  that
TEXT: H may  be  used  to  compute  the  capacitance  from  strictly
TEXT: H geometric information.
TEXT: H
TEXT: H
TEXT: H
TEXT: H name     parameter                       units       default   example
TEXT: H
TEXT: H                                                  2
TEXT: H CJ       junction bottom capacitance     F/meters    -         5e-5
TEXT: H CJSW     junction sidewall capacitance   F/meters    -         2e-11
TEXT: H DEFW     default device width            meters      1e-6      2e-6
TEXT: H NARROW   narrowing due to side etching   meters      0.0       1e-7
TEXT: H
TEXT: H
TEXT: H
TEXT: H
TEXT: H
TEXT: H      The capacitor has a capacitance computed as