spice.txt

spice中支持多层次元件模型仿真的可单独运行的插件源码

SUBJECT: main
TITLE: Table of Contents
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SUBTOPIC: SPICE:INTRODUCTION
SUBTOPIC: SPICE:CIRCUIT DESCRIPTION
SUBTOPIC: SPICE:CIRCUIT ELEMENTS AND MODELS
SUBTOPIC: SPICE:ANALYSES AND OUTPUT CONTROL
SUBTOPIC: SPICE:INTERACTIVE INTERPRETER
SUBTOPIC: SPICE:BIBLIOGRAPHY
SUBTOPIC: SPICE:APPENDIX A
SUBTOPIC: SPICE:APPENDIX B
SUBJECT: INTRODUCTION
TITLE: INTRODUCTION
TEXT: H
TEXT: H _1.  _I_N_T_R_O_D_U_C_T_I_O_N
TEXT: H
TEXT: H
TEXT: H      SPICE is a general-purpose circuit  simulation  program
TEXT: H for  nonlinear  dc,  nonlinear transient, and linear ac ana-
TEXT: H lyses.  Circuits may contain resistors,  capacitors,  induc-
TEXT: H tors,  mutual  inductors,  independent  voltage  and current
TEXT: H sources, four types of dependent sources, lossless and lossy
TEXT: H transmission lines (two separate implementations), switches,
TEXT: H uniform distributed RC lines, and the five most common  sem-
TEXT: H iconductor  devices:  diodes, BJTs, JFETs, MESFETs, and MOS-
TEXT: H FETs.
TEXT: H
TEXT: H      The SPICE3 version is based  directly  on  SPICE  2G.6.
TEXT: H While  SPICE3 is being developed to include new features, it
TEXT: H continues to support those  capabilities  and  models  which
TEXT: H remain in extensive use in the SPICE2 program.
TEXT: H
TEXT: H      SPICE has built-in models for  the  semiconductor  dev-
TEXT: H ices,  and  the  user  need specify only the pertinent model
TEXT: H parameter values.  The model for the BJT  is  based  on  the
TEXT: H integral-charge  model  of Gummel and Poon;  however, if the
TEXT: H Gummel- Poon parameters are not specified, the model reduces
TEXT: H to  the  simpler  Ebers-Moll model.  In either case, charge-
TEXT: H storage effects, ohmic resistances, and a  current-dependent
TEXT: H output  conductance may be included.  The diode model can be
TEXT: H used for either junction diodes or Schottky barrier  diodes.
TEXT: H The  JFET  model  is  based on the FET model of Shichman and
TEXT: H Hodges.   Six  MOSFET  models  are  implemented:   MOS1   is
TEXT: H described by a square-law I-V characteristic, MOS2 [1] is an
TEXT: H analytical model, while MOS3 [1] is a semi-empirical  model;
TEXT: H MOS6  [2]  is a simple analytic model accurate in the short-
TEXT: H channel region; MOS4 [3,  4]  and  MOS5  [5]  are  the  BSIM
TEXT: H (Berkeley Short-channel IGFET Model) and BSIM2.  MOS2, MOS3,
TEXT: H and MOS4 include second-order effects such as channel-length
TEXT: H modulation,   subthreshold   conduction,  scattering-limited
TEXT: H velocity  saturation,  small-size   effects,   and   charge-
TEXT: H controlled capacitances.
SUBTOPIC: SPICE:TYPES OF ANALYSIS
SUBTOPIC: SPICE:ANALYSIS AT DIFFERENT TEMPERATURES
SUBTOPIC: SPICE:CONVERGENCE

SUBJECT: TYPES OF ANALYSIS
TITLE: TYPES OF ANALYSIS
TEXT: H
TEXT: H _1._1.  _T_Y_P_E_S _O_F _A_N_A_L_Y_S_I_S
TEXT: H
SUBTOPIC: SPICE:DC Analysis
SUBTOPIC: SPICE:AC SmallSignal Analysis
SUBTOPIC: SPICE:Transient Analysis
SUBTOPIC: SPICE:PoleZero Analysis
SUBTOPIC: SPICE:SmallSignal Distortion Analysis
SUBTOPIC: SPICE:Sensitivity Analysis
SUBTOPIC: SPICE:Noise Analysis

SUBJECT: DC Analysis
TITLE: DC Analysis
TEXT: H
TEXT: H _1._1._1.  _D_C _A_n_a_l_y_s_i_s
TEXT: H
TEXT: H
TEXT: H      The dc analysis portion  of  SPICE  determines  the  dc
TEXT: H operating  point  of  the circuit with inductors shorted and
TEXT: H capacitors opened.  The dc analysis options are specified on
TEXT: H the  .DC,  .TF,  and  .OP  control  lines.  A dc analysis is
TEXT: H automatically performed prior to  a  transient  analysis  to
TEXT: H determine  the transient initial conditions, and prior to an
TEXT: H ac  small-signal  analysis  to  determine  the   linearized,
TEXT: H small-signal  models  for  nonlinear devices.  If requested,
TEXT: H the dc small-signal value of a transfer function  (ratio  of
TEXT: H output variable to input source), input resistance, and out-
TEXT: H put resistance is also computed as a part of  the  dc  solu-
TEXT: H tion.   The  dc  analysis  can  also  be used to generate dc
TEXT: H transfer curves:  a specified independent voltage or current
TEXT: H source  is  stepped  over  a user-specified range and the dc
TEXT: H output variables  are  stored  for  each  sequential  source
TEXT: H value.
TEXT: H

SUBJECT: AC SmallSignal Analysis
TITLE: AC Small-Signal Analysis
TEXT: H
TEXT: H _1._1._2.  _A_C _S_m_a_l_l-_S_i_g_n_a_l _A_n_a_l_y_s_i_s
TEXT: H
TEXT: H
TEXT: H      The ac small-signal portion of SPICE  computes  the  ac
TEXT: H output  variables  as  a function of frequency.  The program
TEXT: H first computes the dc operating point  of  the  circuit  and
TEXT: H determines  linearized,  small-signal  models for all of the
TEXT: H nonlinear devices in the circuit.  The resultant linear cir-
TEXT: H cuit  is  then  analyzed over a user-specified range of fre-
TEXT: H quencies.   The  desired  output  of  an  ac  small-  signal
TEXT: H analysis is usually a transfer function (voltage gain, tran-
TEXT: H simpedance, etc).  If the circuit has only one ac input,  it
TEXT: H is  convenient to set that input to unity and zero phase, so
TEXT: H that output variables have the same value  as  the  transfer
TEXT: H function of the output variable with respect to the input.
TEXT: H

SUBJECT: Transient Analysis
TITLE: Transient Analysis
TEXT: H
TEXT: H _1._1._3.  _T_r_a_n_s_i_e_n_t _A_n_a_l_y_s_i_s
TEXT: H
TEXT: H      The transient analysis portion of  SPICE  computes  the
TEXT: H transient  output  variables  as  a  function of time over a
TEXT: H user-specified time interval.  The  initial  conditions  are
TEXT: H automatically  determined  by  a  dc  analysis.  All sources
TEXT: H which are not time dependent (for example,  power  supplies)
TEXT: H are  set  to their dc value.  The transient time interval is
TEXT: H specified on a .TRAN control line.
TEXT: H

SUBJECT: PoleZero Analysis
TITLE: Pole-Zero Analysis
TEXT: H
TEXT: H _1._1._4.  _P_o_l_e-_Z_e_r_o _A_n_a_l_y_s_i_s
TEXT: H
TEXT: H
TEXT: H      The pole-zero analysis portion of  SPICE  computes  the
TEXT: H poles and/or zeros in the small-signal ac transfer function.
TEXT: H The program first computes the dc operating point  and  then
TEXT: H determines  the  linearized, small-signal models for all the
TEXT: H nonlinear devices in the circuit.  This circuit is then used
TEXT: H to find the poles and zeros of the transfer function.
TEXT: H
TEXT: H      Two types of transfer functions are allowed  :  one  of
TEXT: H the  form  (output voltage)/(input voltage) and the other of
TEXT: H the form (output voltage)/(input current).  These two  types
TEXT: H of  transfer  functions cover all the cases and one can find
TEXT: H the poles/zeros of functions like input/output impedance and
TEXT: H voltage  gain.   The input and output ports are specified as
TEXT: H two pairs of nodes.
TEXT: H
TEXT: H      The pole-zero analysis works  with  resistors,  capaci-
TEXT: H tors,   inductors,  linear-controlled  sources,  independent
TEXT: H sources, BJTs,  MOSFETs,  JFETs  and  diodes.   Transmission
TEXT: H lines are not supported.
TEXT: H
TEXT: H      The method used in the analysis is a sub-optimal numer-
TEXT: H ical  search.  For large circuits it may take a considerable
TEXT: H time or fail to find all poles and  zeros.   For  some  cir-
TEXT: H cuits,  the  method  becomes  "lost"  and finds an excessive
TEXT: H number of poles or zeros.
TEXT: H

SUBJECT: SmallSignal Distortion Analysis
TITLE: Small-Signal Distortion Analysis
TEXT: H
TEXT: H _1._1._5.  _S_m_a_l_l-_S_i_g_n_a_l _D_i_s_t_o_r_t_i_o_n _A_n_a_l_y_s_i_s
TEXT: H
TEXT: H
TEXT: H      The  distortion  analysis  portion  of  SPICE  computes
TEXT: H steady-state harmonic and intermodulation products for small
TEXT: H input signal magnitudes.  If signals of a  single  frequency
TEXT: H are  specified  as  the  input  to  the circuit, the complex
TEXT: H values of the second and third harmonics are  determined  at
TEXT: H every  point  in  the  circuit.  If there are signals of two
TEXT: H frequencies input to the circuit, the analysis finds out the
TEXT: H complex  values  of  the  circuit  variables  at the sum and
TEXT: H difference of the input frequencies, and at  the  difference
TEXT: H of  the  smaller  frequency  from the second harmonic of the
TEXT: H larger frequency.
TEXT: H
TEXT: H      Distortion analysis is supported for the following non-
TEXT: H linear  devices: diodes (DIO), BJT, JFET, MOSFETs (levels 1,
TEXT: H 2, 3, 4/BSIM1, 5/BSIM2, and 6) and MESFETS.  All linear dev-
TEXT: H ices are automatically supported by distortion analysis.  If
TEXT: H there are switches present in the circuit, the analysis con-
TEXT: H tinues  to  be  accurate provided the switches do not change
TEXT: H state under the small excitations used for distortion calcu-
TEXT: H lations.
TEXT: H

SUBJECT: Sensitivity Analysis
TITLE: Sensitivity Analysis
TEXT: H
TEXT: H _1._1._6.  _S_e_n_s_i_t_i_v_i_t_y _A_n_a_l_y_s_i_s
TEXT: H
TEXT: H
TEXT: H      Spice3 will calculate  either  the  DC  operating-point
TEXT: H sensitivity  or the AC small-signal sensitivity of an output
TEXT: H variable with respect to all  circuit  variables,  including
TEXT: H model  parameters.   Spice  calculates  the difference in an
TEXT: H output variable (either a node voltage or a branch  current)
TEXT: H by  perturbing  each parameter of each device independently.
TEXT: H Since the method is a numerical approximation,  the  results
TEXT: H may  demonstrate  second  order  affects in highly sensitive
TEXT: H parameters, or may fail to show very low but non-zero sensi-
TEXT: H tivity.   Further, since each variable is perturb by a small
TEXT: H fraction of its value, zero-valued parameters are not analy-
TEXT: H ized  (this  has  the  benefit of reducing what is usually a
TEXT: H very large amount of data).
TEXT: H

SUBJECT: Noise Analysis
TITLE: Noise Analysis
TEXT: H
TEXT: H _1._1._7.  _N_o_i_s_e _A_n_a_l_y_s_i_s
TEXT: H
TEXT: H
TEXT: H      The noise  analysis  portion  of  SPICE  does  analysis
TEXT: H device-generated noise for the given circuit.  When provided
TEXT: H with an input source and an output port, the analysis calcu-
TEXT: H lates the noise contributions of each device (and each noise
TEXT: H generator within the device) to the output port voltage.  It
TEXT: H also  calculates  the input noise to the circuit, equivalent
TEXT: H to the output noise referred to the specified input  source.
TEXT: H This  is done for every frequency point in a specified range
TEXT: H - the calculated value of the noise corresponds to the spec-
TEXT: H tral  density of the circuit variable viewed as a stationary
TEXT: H gaussian stochastic process.
TEXT: H
TEXT: H      After  calculating  the   spectral   densities,   noise
TEXT: H analysis  integrates  these  values  over the specified fre-
TEXT: H quency range to arrive at the  total  noise  voltage/current
TEXT: H (over   this   frequency   range).   This  calculated  value
TEXT: H corresponds to the variance of the circuit  variable  viewed
TEXT: H as a stationary gaussian process.

SUBJECT: ANALYSIS AT DIFFERENT TEMPERATURES
TITLE: ANALYSIS AT DIFFERENT TEMPERATURES
TEXT: H
TEXT: H _1._2.  _A_N_A_L_Y_S_I_S _A_T _D_I_F_F_E_R_E_N_T _T_E_M_P_E_R_A_T_U_R_E_S
TEXT: H
TEXT: H
TEXT: H      All input data for SPICE is assumed to have been  meas-
TEXT: H                                     o
TEXT: H ured  at a nominal temperature of 27 C, which can be changed
TEXT: H by use of the TNOM parameter on the  .OPTION  control  line.
TEXT: H This  value  can  further be overridden for any device which
TEXT: H models temperature effects by specifying the TNOM  parameter
TEXT: H on the model itself.  The circuit simulation is performed at
TEXT: H                    o
TEXT: H a temperature of 27 C, unless overridden by a TEMP parameter
TEXT: H on  the  .OPTION  control  line.   Individual  instances may
TEXT: H further override the circuit temperature through the specif-
TEXT: H ication of a TEMP parameter on the instance.
TEXT: H
TEXT: H      Temperature dependent support is  provided  for  resis-
TEXT: H tors,  diodes,  JFETs,  BJTs, and level 1, 2, and 3 MOSFETs.
TEXT: H BSIM (levels 4 and 5) MOSFETs have an alternate  temperature
TEXT: H dependency  scheme which adjusts all of the model parameters
TEXT: H before input to SPICE.  For details of the BSIM  temperature
TEXT: H adjustment, see [6] and [7].
TEXT: H
TEXT: H
TEXT: H      Temperature appears explicitly in the exponential terms
TEXT: H of  the BJT and diode model equations.  In addition, satura-
TEXT: H tion currents have a built-in temperature  dependence.   The
TEXT: H temperature  dependence of the saturation current in the BJT
TEXT: H models is determined by:
TEXT: H
TEXT: H                              XTI
TEXT: H                          |T |        | E q(T  T )|
TEXT: H                            1            g   1  0
TEXT: H          I (T ) = I (T ) |--|     exp|-----------|
TEXT: H           S  1     S  0
TEXT: H                          |T |        |k (T  - T )|
TEXT: H                            0              1    0
TEXT: H
TEXT: H
TEXT: H
TEXT: H where k is Boltzmann's constant,  q  is  the  electronic
TEXT: H charge, E  is the energy gap which is a model parameter,
TEXT: H          G
TEXT: H and XTI is the saturation current  temperature  exponent
TEXT: H (also a model parameter, and usually equal to 3).
TEXT: H
TEXT: H
TEXT: H
TEXT: H      The temperature dependence of forward and reverse  beta
TEXT: H is according to the formula:
TEXT: H
TEXT: H                                      XTB
TEXT: H                                  |T |
TEXT: H                                    1
TEXT: H                    B(T ) = B(T ) |--|
TEXT: H                       1       0
TEXT: H                                  |T |
TEXT: H                                    0
TEXT: H
TEXT: H
TEXT: H
TEXT: H where T  and T  are in degrees  Kelvin,  and  XTB  is  a
TEXT: H        1      0
TEXT: H user-supplied  model  parameter.  Temperature effects on
TEXT: H beta are carried out by appropriate  adjustment  to  the
TEXT: H values  of  B , I  , B , and I   (spice model parameters
TEXT: H              F   SE   R       SC
TEXT: H BF, ISE, BR, and ISC, respectively).
TEXT: H
TEXT: H
TEXT: H
TEXT: H      Temperature dependence of the saturation current in the
TEXT: H junction diode model is determined by:
TEXT: H
TEXT: H                             XTI
TEXT: H                             ---
TEXT: H                              N
TEXT: H                         |T |        |  E q(T  T ) |
TEXT: H                           1             g   1  0
TEXT: H         I (T ) = I (T ) |--|     exp|-------------|
TEXT: H          S  1     S  0
TEXT: H                         |T |        |N k (T  - T )|
TEXT: H                           0                1    0
TEXT: H
TEXT: H
TEXT: H
TEXT: H where N is the emission coefficient, which  is  a  model
TEXT: H parameter,  and  the other symbols have the same meaning
TEXT: H as above.  Note that for Schottky  barrier  diodes,  the