📄 twomesh.h
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/**********Copyright 1991 Regents of the University of California. All rights reserved.Authors: 1987 Karti Mayaram, 1991 David Gates**********//* * Two-Dimensional Element-based Simulation-Mesh Data Structures */#ifndef TWOMESH_H#define TWOMESH_H#include "material.h"typedef struct sTWOelem{ struct sTWOelem *pElems[4]; /* array to store the element neighbors */ struct sTWOnode *pNodes[4]; /* array to store the element nodes */ struct sTWOedge *pEdges[4]; /* array to store the edges */ double dx; /* the x length */ double dy; /* the y length */ double dxOverDy; /* dX / dY */ double dyOverDx; /* dY / dX */ int domain; /* device domain owning element */ int elemType; /* material type of element */ TWOmaterial *matlInfo; /* material information */ double epsRel; /* relative epsilon *//* Values needed to calc. mobility and its derivatives at element center */ double mun0, mup0; /* temp. and doping-dep. mobilities */ double mun, mup; /* field and carrier-dep. mobilities */ double dMunDEs, dMupDEs; /* Mob Deriv surf EFIELD Comp */ double dMunDEx, dMupDEx; /* Mob Deriv x EFIELD Comp */ double dMunDEy, dMupDEy; /* Mob Deriv y EFIELD Comp */ double dMunDWx, dMupDWx; /* Mob Deriv x WDF Comp */ double dMunDWy, dMupDWy; /* Mob Deriv y WDF Comp */ double dMunDN, dMupDN; /* Mob Deriv nConc Comp */ double dMunDP, dMupDP; /* Mob Deriv pConc Comp */ unsigned surface : 1; /* flag to indicate surface elem */ int channel; /* id of channel elem is in, 0 is none */ int direction; /* direction of flow for channels */ int evalNodes[4]; /* nodes to be evaluated in elem */ int evalEdges[4]; /* edges to be evaluated in elem */} TWOelem;#define pTopElem pElems[0]#define pRightElem pElems[1]#define pBotElem pElems[2]#define pLeftElem pElems[3]#define pTLNode pNodes[0]#define pTRNode pNodes[1]#define pBRNode pNodes[2]#define pBLNode pNodes[3]#define pTopEdge pEdges[0]#define pRightEdge pEdges[1]#define pBotEdge pEdges[2]#define pLeftEdge pEdges[3]typedef struct sTWOedge{ int edgeType; /* boundary type of edge */ double dPsi; /* deltaPsi */ double jn; /* electron current */ double jp; /* hole current */ double jd; /* displacement current */ double dJnDpsiP1; /* dJn/dPsi(+1) */ double dJnDn; /* dJnx/dN */ double dJnDnP1; /* dJn/dN(+1) */ double dJpDpsiP1; /* dJpx/dPsi(+1) */ double dJpDp; /* dJpx/dP */ double dJpDpP1; /* dJpxDp(+1) */ double dCBand; /* effective delta conduction band */ double dVBand; /* effective delta valence band */ double qf; /* fixed charge density */ /* Terms to find weighted carrier driving force and its derivatives */ double wdfn; /* N weighted driving force */ double wdfp; /* P weighted driving force */ double dWnDpsiP1; /* dWn/dPsi(+1) */ double dWnDn; /* dWn/dN */ double dWnDnP1; /* dWn/dN(+1) */ double dWpDpsiP1; /* dWp/dPsi(+1) */ double dWpDp; /* dWp/dP */ double dWpDpP1; /* dWp/dP(+1) */ /* Coefficients for weighting mobility on sides of edges */ double kNeg; /* Spline for negative side of edge */ double kPos; /* Spline for positive side of edge */ int edgeState; /* pointer to state vector */ unsigned evaluated : 1; /* flag to indicated evaluated */} TWOedge;typedef struct sTWOnode { int nodeType; /* type of node */ int nodeI; /* node x-index */ int nodeJ; /* node y-index */ int poiEqn; /* equation number for equilib poisson */ int psiEqn; /* equation number for bias poisson */ int nEqn; /* equation number for n continuity */ int pEqn; /* equation number for p continuity */ struct sTWOelem *pElems[4]; /* array of elements */ double psi0; /* equilibrium potential */ double psi; /* electrostatic potential */ double nConc; /* electron conc. */ double pConc; /* hole conc. */ double nie; /* effective intrinsic carrier conc. */ double eg; /* energy gap */ double eaff; /* electron affinity; work phi for metal*/ double tn; /* electron lifetime */ double tp; /* hole lifetime */ double netConc; /* net doping conc. */ double totalConc; /* total doping conc. */ double na; /* acceptor conc. */ double nd; /* donor conc. */ double nPred; /* predicted electron conc. */ double pPred; /* predicted hole conc. */ double uNet; /* net recombination rate */ double dUdN; /* dU / dN */ double dUdP; /* dU / dP */ double dNdT; /* dN / dT */ double dPdT; /* dP / dT */ int nodeState; /* pointer to the state vector */ unsigned evaluated : 1; /* flag to indicated evaluated */ /* sparse matrix pointers. pointers to doubles */ /* DAG: diagonal pointers fXXiX1jX1 */ double *fPsiPsiiM1; double *fPsiPsi; double *fPsiPsiiP1; double *fPsiPsijM1; double *fPsiPsijP1; double *fPsiN; double *fPsiP; double *fNPsiiM1; double *fNPsi; double *fNPsiiP1; double *fNPsijM1; double *fNPsijP1; double *fNPsiiM1jM1; double *fNPsiiM1jP1; double *fNPsiiP1jM1; double *fNPsiiP1jP1; double *fNNiM1; double *fNN; double *fNNiP1; double *fNNjM1; double *fNNjP1; double *fNNiM1jM1; double *fNNiM1jP1; double *fNNiP1jM1; double *fNNiP1jP1; double *fNP; double *fPPsiiM1; double *fPPsi; double *fPPsiiP1; double *fPPsijM1; double *fPPsijP1; double *fPPsiiM1jM1; double *fPPsiiM1jP1; double *fPPsiiP1jM1; double *fPPsiiP1jP1; double *fPPiM1; double *fPP; double *fPPiP1; double *fPPjM1; double *fPPjP1; double *fPPiM1jM1; double *fPPiM1jP1; double *fPPiP1jM1; double *fPPiP1jP1; double *fPN; /* DAG: Pointers for Surface-Field-Dependent Terms */ /* For Oxide/Insulator on Silicon/Semiconductor: Ox OxM1 + ----- + ----- + OxP1 OXIDE | | | | | | - InM1 + ----- + ----- + InP1 --- INTERFACE In */ double *fNPsiInM1; double *fNPsiIn; double *fNPsiInP1; double *fNPsiOxM1; double *fNPsiOx; double *fNPsiOxP1; double *fPPsiInM1; double *fPPsiIn; double *fPPsiInP1; double *fPPsiOxM1; double *fPPsiOx; double *fPPsiOxP1;} TWOnode;#define pTLElem pElems[0]#define pTRElem pElems[1]#define pBRElem pElems[2]#define pBLElem pElems[3]#define nodePsi nodeState #define nodeN nodeState+1#define nodeP nodeState+3#define edgeDpsi edgeState#define TWOnumNodeStates 5#define TWOnumEdgeStates 2#endif /* TWOMESH_H */⌨️ 快捷键说明
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