📄 pass.cir
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TURNOFF TRANSIENT OF PASS TRANSISTORM1 11 2 3 4 MMOD W=20UMCS 1 0 6.0PFCL 3 0 6.0PFR1 3 6 200KVIN 6 0 DC 0VDRN 1 11 DC 0VG 2 0 DC 5 PWL 0 5 0.1N 0 1 0VB 4 0 DC 0.0.TRAN 0.05NS 0.2NS 0.0NS 0.05NS.PRINT TRAN V(1) I(VDRN).IC V(1)=0 V(3)=0.OPTION ACCT BYPASS=1.MODEL MMOD NUMOS+ X.MESH L=0.0 N=1+ X.MESH L=0.6 N=4+ X.MESH L=0.7 N=5+ X.MESH L=1.0 N=7+ X.MESH L=1.2 N=11+ X.MESH L=3.2 N=21+ X.MESH L=3.4 N=25+ X.MESH L=3.7 N=27+ X.MESH L=3.8 N=28+ X.MESH L=4.4 N=31++ Y.MESH L=-.05 N=1+ Y.MESH L=0.0 N=5+ Y.MESH L=.05 N=9+ Y.MESH L=0.3 N=14+ Y.MESH L=2.0 N=19++ REGION NUM=1 MATERIAL=1 Y.L=0.0+ MATERIAL NUM=1 SILICON+ MOBILITY MATERIAL=1 CONCMOD=SG FIELDMOD=SG++ REGION NUM=2 MATERIAL=2 Y.H=0.0 X.L=0.7 X.H=3.7+ MATERIAL NUM=2 OXIDE++ ELEC NUM=1 X.L=3.8 X.H=4.4 Y.L=0.0 Y.H=0.0+ ELEC NUM=2 X.L=0.7 X.H=3.7 IY.L=1 IY.H=1+ ELEC NUM=3 X.L=0.0 X.H=0.6 Y.L=0.0 Y.H=0.0+ ELEC NUM=4 X.L=0.0 X.H=4.4 Y.L=2.0 Y.H=2.0++ DOPING UNIF P.TYPE CONC=2.5E16 X.L=0.0 X.H=4.4 Y.L=0.0 Y.H=2.0+ DOPING UNIF P.TYPE CONC=1E16 X.L=0.0 X.H=4.4 Y.L=0.0 Y.H=0.05+ DOPING UNIF N.TYPE CONC=1E20 X.L=0.0 X.H=1.1 Y.L=0.0 Y.H=0.2+ DOPING UNIF N.TYPE CONC=1E20 X.L=3.3 X.H=4.4 Y.L=0.0 Y.H=0.2++ MODELS CONCMOB FIELDMOB+ METHOD AC=DIRECT ONEC.END
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