📄 nmosinv.cir
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RESISTIVE LOAD NMOS INVERTERVIN 1 0 PWL 0 0.0 2NS 5VDD 3 0 DC 5.0RD 3 2 2.5KM1 2 1 4 5 MMOD W=10UMCL 2 0 2PFVB 5 0 0VS 4 0 0.MODEL MMOD NUMOS+ X.MESH L=0.0 N=1+ X.MESH L=0.6 N=4+ X.MESH L=0.7 N=5+ X.MESH L=1.0 N=7+ X.MESH L=1.2 N=11+ X.MESH L=3.2 N=21+ X.MESH L=3.4 N=25+ X.MESH L=3.7 N=27+ X.MESH L=3.8 N=28+ X.MESH L=4.4 N=31++ Y.MESH L=-.05 N=1+ Y.MESH L=0.0 N=5+ Y.MESH L=.05 N=9+ Y.MESH L=0.3 N=14+ Y.MESH L=2.0 N=19++ REGION NUM=1 MATERIAL=1 Y.L=0.0+ MATERIAL NUM=1 SILICON+ MOBILITY MATERIAL=1 CONCMOD=SG FIELDMOD=SG++ REGION NUM=2 MATERIAL=2 Y.H=0.0 X.L=0.7 X.H=3.7+ MATERIAL NUM=2 OXIDE++ ELEC NUM=1 X.L=3.8 X.H=4.4 Y.L=0.0 Y.H=0.0+ ELEC NUM=2 X.L=0.7 X.H=3.7 IY.L=1 IY.H=1+ ELEC NUM=3 X.L=0.0 X.H=0.6 Y.L=0.0 Y.H=0.0+ ELEC NUM=4 X.L=0.0 X.H=4.4 Y.L=2.0 Y.H=2.0++ DOPING UNIF P.TYPE CONC=2.5E16 X.L=0.0 X.H=4.4 Y.L=0.0 Y.H=2.0+ DOPING UNIF P.TYPE CONC=1E16 X.L=0.0 X.H=4.4 Y.L=0.0 Y.H=0.05+ DOPING UNIF N.TYPE CONC=1E20 X.L=0.0 X.H=1.1 Y.L=0.0 Y.H=0.2+ DOPING UNIF N.TYPE CONC=1E20 X.L=3.3 X.H=4.4 Y.L=0.0 Y.H=0.2++ MODELS CONCMOB FIELDMOB+ METHOD AC=DIRECT ONEC.TRAN 0.2NS 30NS.OPTIONS ACCT BYPASS=1.PRINT TRAN V(1) V(2).END
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