📄 bootinv.cir
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NMOS Enhancement-Load Bootstrap InverterVdd 1 0 5.0vVss 2 0 0.0vVin 5 0 0.0v PWL (0.0ns 5.0v) (1ns 0.0v) (10ns 0.0v) (11ns 5.0v)+ (20ns 5.0v) (21ns 0.0v) (30ns 0.0v) (31ns 5.0v)M1 1 1 3 2 M_NMOS w=5uM2 1 3 4 4 M_NMOS w=5uM3 4 5 2 2 M_NMOS w=5uCL 4 0 0.1pfCB 3 4 0.1pf.model M_NMOS numos+ x.mesh l=0.0 n=1+ x.mesh l=0.6 n=4+ x.mesh l=0.7 n=5+ x.mesh l=1.0 n=7+ x.mesh l=1.2 n=11+ x.mesh l=3.2 n=21+ x.mesh l=3.4 n=25+ x.mesh l=3.7 n=27+ x.mesh l=3.8 n=28+ x.mesh l=4.4 n=31++ y.mesh l=-.05 n=1+ y.mesh l=0.0 n=5+ y.mesh l=.05 n=9+ y.mesh l=0.3 n=14+ y.mesh l=2.0 n=19++ region num=1 material=1 y.l=0.0+ material num=1 silicon+ mobility material=1 concmod=sg fieldmod=sg+ mobility material=1 init elec major+ mobility material=1 init elec minor+ mobility material=1 init hole major+ mobility material=1 init hole minor++ region num=2 material=2 y.h=0.0 x.l=0.7 x.h=3.7+ material num=2 oxide++ elec num=1 x.l=3.8 x.h=4.4 y.l=0.0 y.h=0.0+ elec num=2 x.l=0.7 x.h=3.7 iy.l=1 iy.h=1+ elec num=3 x.l=0.0 x.h=0.6 y.l=0.0 y.h=0.0+ elec num=4 x.l=0.0 x.h=4.4 y.l=2.0 y.h=2.0++ doping unif p.type conc=2.5e16 x.l=0.0 x.h=4.4 y.l=0.0 y.h=2.0+ doping unif p.type conc=1e16 x.l=0.0 x.h=4.4 y.l=0.0 y.h=0.05+ doping unif n.type conc=1e20 x.l=0.0 x.h=1.1 y.l=0.0 y.h=0.2+ doping unif n.type conc=1e20 x.l=3.3 x.h=4.4 y.l=0.0 y.h=0.2++ models concmob fieldmob+ method ac=direct onec.tran 0.2ns 40ns.print v(4).options acct bypass=1 method=gear.end
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