📄 bicmos.lib
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*** BICMOS.LIB: Library of models used in the 1.0 um CBiCMOS process* Contains CIDER input descriptions as well as matching* SPICE models for some of the CIDER models.***** One-dimensional models for a* polysilicon emitter complementary bipolar process.* The default device size is 1um by 1um (LxW)**.model M_NPN1D nbjt level=1+ title One-Dimensional Numerical Bipolar+ options base.depth=0.15 base.area=0.1 base.length=0.5 defa=1p+ x.mesh loc=-0.2 n=1+ x.mesh loc=0.0 n=51+ x.mesh wid=0.15 h.e=0.0001 h.m=.004 r=1.2+ x.mesh wid=1.15 h.s=0.0001 h.m=.004 r=1.2+ domain num=1 material=1 x.l=0.0+ domain num=2 material=2 x.h=0.0+ material num=1 silicon+ mobility mat=1 concmod=ct fieldmod=ct+ material num=2 polysilicon+ mobility mat=2 concmod=ct fieldmod=ct+ doping gauss n.type conc=3e20 x.l=-0.2 x.h=0.0 char.len=0.047+ doping gauss p.type conc=5e18 x.l=-0.2 x.h=0.0 char.len=0.100+ doping unif n.type conc=1e16 x.l=0.0 x.h=1.3+ doping gauss n.type conc=5e19 x.l=1.3 x.h=1.3 char.len=0.100+ models bgn srh auger conctau concmob fieldmob + method devtol=1e-12 ac=direct itlim=15.model M_PNP1D nbjt level=1+ title One-Dimensional Numerical Bipolar+ options base.depth=0.2 base.area=0.1 base.length=0.5 defa=1p+ x.mesh loc=-0.2 n=1+ x.mesh loc=0.0 n=51+ x.mesh wid=0.20 h.e=0.0001 h.m=.004 r=1.2+ x.mesh wid=1.10 h.s=0.0001 h.m=.004 r=1.2+ domain num=1 material=1 x.l=0.0+ domain num=2 material=2 x.h=0.0+ material num=1 silicon+ mobility mat=1 concmod=ct fieldmod=ct+ material num=2 polysilicon+ mobility mat=2 concmod=ct fieldmod=ct+ doping gauss p.type conc=3e20 x.l=-0.2 x.h=0.0 char.len=0.047+ doping gauss n.type conc=5e17 x.l=-0.2 x.h=0.0 char.len=0.200+ doping unif p.type conc=1e16 x.l=0.0 x.h=1.3+ doping gauss p.type conc=5e19 x.l=1.3 x.h=1.3 char.len=0.100+ models bgn srh auger conctau concmob fieldmob + method devtol=1e-12 ac=direct itlim=15*** Two-dimensional models for a* polysilicon emitter complementary bipolar process.* The default device size is 1um by 1um (LxW)**.MODEL M_NPNS nbjt level=2+ title TWO-DIMENSIONAL NUMERICAL POLYSILICON EMITTER BIPOLAR TRANSISTOR+ * Since half the device is simulated, double the unit width to get+ * 1.0 um emitter. Use a small mesh for this model.+ options defw=2.0u+ output stat+ + x.mesh w=2.0 h.e=0.02 h.m=0.5 r=2.0+ x.mesh w=0.5 h.s=0.02 h.m=0.2 r=2.0+ + y.mesh l=-0.2 n=1+ y.mesh l= 0.0 n=5+ y.mesh w=0.10 h.e=0.004 h.m=0.05 r=2.5+ y.mesh w=0.15 h.s=0.004 h.m=0.02 r=2.5+ y.mesh w=1.05 h.s=0.02 h.m=0.1 r=2.5++ domain num=1 material=1 x.l=2.0 y.h=0.0+ domain num=2 material=2 x.h=2.0 y.h=0.0+ domain num=3 material=3 y.l=0.0+ material num=1 polysilicon+ material num=2 oxide+ material num=3 silicon++ elec num=1 x.l=0.0 x.h=0.0 y.l=1.1 y.h=1.3+ elec num=2 x.l=0.0 x.h=0.5 y.l=0.0 y.h=0.0+ elec num=3 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=-0.2++ doping gauss n.type conc=3e20 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=0.0+ + char.l=0.047 lat.rotate+ doping gauss p.type conc=5e18 x.l=0.0 x.h=5.0 y.l=-0.2 y.h=0.0+ + char.l=0.100 lat.rotate+ doping gauss p.type conc=1e20 x.l=0.0 x.h=0.5 y.l=-0.2 y.h=0.0+ + char.l=0.100 lat.rotate ratio=0.7+ doping unif n.type conc=1e16 x.l=0.0 x.h=5.0 y.l=0.0 y.h=1.3+ doping gauss n.type conc=5e19 x.l=0.0 x.h=5.0 y.l=1.3 y.h=1.3+ + char.l=0.100 lat.rotate++ method ac=direct itlim=10+ models bgn srh auger conctau concmob fieldmob.MODEL M_NPN nbjt level=2+ title TWO-DIMENSIONAL NUMERICAL POLYSILICON EMITTER BIPOLAR TRANSISTOR+ * Since half the device is simulated, double the unit width to get+ * 1.0 um emitter length. Uses a finer mesh in the X direction.+ options defw=2.0u+ output stat+ + x.mesh w=0.5 h.e=0.075 h.m=0.2 r=2.0+ x.mesh w=0.75 h.s=0.075 h.m=0.2 r=2.0+ x.mesh w=0.75 h.e=0.05 h.m=0.2 r=1.5+ x.mesh w=0.5 h.s=0.05 h.m=0.1 r=1.5+ + y.mesh l=-0.2 n=1+ y.mesh l= 0.0 n=5+ y.mesh w=0.10 h.e=0.003 h.m=0.01 r=1.5+ y.mesh w=0.15 h.s=0.003 h.m=0.02 r=1.5+ y.mesh w=0.35 h.s=0.02 h.m=0.2 r=1.5+ y.mesh w=0.40 h.e=0.05 h.m=0.2 r=1.5+ y.mesh w=0.30 h.s=0.05 h.m=0.1 r=1.5++ domain num=1 material=1 x.l=2.0 y.h=0.0+ domain num=2 material=2 x.h=2.0 y.h=0.0+ domain num=3 material=3 y.l=0.0+ material num=1 polysilicon+ material num=2 oxide+ material num=3 silicon++ elec num=1 x.l=0.0 x.h=0.0 y.l=1.1 y.h=1.3+ elec num=2 x.l=0.0 x.h=0.5 y.l=0.0 y.h=0.0+ elec num=3 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=-0.2++ doping gauss n.type conc=3e20 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=0.0+ + char.l=0.047 lat.rotate+ doping gauss p.type conc=5e18 x.l=0.0 x.h=5.0 y.l=-0.2 y.h=0.0+ + char.l=0.100 lat.rotate+ doping gauss p.type conc=1e20 x.l=0.0 x.h=0.5 y.l=-0.2 y.h=0.0+ + char.l=0.100 lat.rotate ratio=0.7+ doping unif n.type conc=1e16 x.l=0.0 x.h=5.0 y.l=0.0 y.h=1.3+ doping gauss n.type conc=5e19 x.l=0.0 x.h=5.0 y.l=1.3 y.h=1.3+ + char.l=0.100 lat.rotate++ method ac=direct itlim=10+ models bgn srh auger conctau concmob fieldmob.MODEL M_PNPS nbjt level=2+ title TWO-DIMENSIONAL NUMERICAL POLYSILICON EMITTER BIPOLAR TRANSISTOR+ * Since half the device is simulated, double the unit width to get+ * 1.0 um emitter length. Use a small mesh for this model.+ options defw=2.0u+ output stat++ x.mesh w=2.0 h.e=0.02 h.m=0.5 r=2.0+ x.mesh w=0.5 h.s=0.02 h.m=0.2 r=2.0+ + y.mesh l=-0.2 n=1+ y.mesh l= 0.0 n=5+ y.mesh w=0.12 h.e=0.004 h.m=0.05 r=2.5+ y.mesh w=0.28 h.s=0.004 h.m=0.02 r=2.5+ y.mesh w=1.05 h.s=0.02 h.m=0.1 r=2.5+ + domain num=1 material=1 x.l=2.0 y.h=0.0+ domain num=2 material=2 x.h=2.0 y.h=0.0+ domain num=3 material=3 y.l=0.0+ material num=1 polysilicon+ material num=2 oxide+ material num=3 silicon++ elec num=1 x.l=0.0 x.h=0.0 y.l=1.1 y.h=1.3+ elec num=2 x.l=0.0 x.h=0.5 y.l=0.0 y.h=0.0+ elec num=3 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=-0.2++ doping gauss p.type conc=3e20 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=0.0+ + char.l=0.047 lat.rotate+ doping gauss n.type conc=5e17 x.l=0.0 x.h=5.0 y.l=-0.2 y.h=0.0+ + char.l=0.200 lat.rotate+ doping gauss n.type conc=1e20 x.l=0.0 x.h=0.5 y.l=-0.2 y.h=0.0+ + char.l=0.100 lat.rotate ratio=0.7+ doping unif p.type conc=1e16 x.l=0.0 x.h=5.0 y.l=0.0 y.h=1.3+ doping gauss p.type conc=5e19 x.l=0.0 x.h=5.0 y.l=1.3 y.h=1.3+ + char.l=0.100 lat.rotate++ method ac=direct itlim=10+ models bgn srh auger conctau concmob fieldmob.MODEL M_PNP nbjt level=2+ title TWO-DIMENSIONAL NUMERICAL POLYSILICON EMITTER BIPOLAR TRANSISTOR+ * Since half the device is simulated, double the unit width to get+ * 1.0 um emitter length. Uses a finer mesh in the X direction.+ options defw=2.0u+ output stat+ + x.mesh w=0.5 h.e=0.075 h.m=0.2 r=2.0+ x.mesh w=0.75 h.s=0.075 h.m=0.2 r=2.0+ x.mesh w=0.75 h.e=0.05 h.m=0.2 r=1.5+ x.mesh w=0.5 h.s=0.05 h.m=0.1 r=1.5+ + y.mesh l=-0.2 n=1+ y.mesh l= 0.0 n=5+ y.mesh w=0.12 h.e=0.003 h.m=0.01 r=1.5+ y.mesh w=0.28 h.s=0.003 h.m=0.02 r=1.5+ y.mesh w=0.20 h.s=0.02 h.m=0.2 r=1.5+ y.mesh w=0.40 h.e=0.05 h.m=0.2 r=1.5+ y.mesh w=0.30 h.s=0.05 h.m=0.1 r=1.5++ domain num=1 material=1 x.l=2.0 y.h=0.0+ domain num=2 material=2 x.h=2.0 y.h=0.0+ domain num=3 material=3 y.l=0.0+ material num=1 polysilicon+ material num=2 oxide+ material num=3 silicon++ elec num=1 x.l=0.0 x.h=0.0 y.l=1.1 y.h=1.3+ elec num=2 x.l=0.0 x.h=0.5 y.l=0.0 y.h=0.0+ elec num=3 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=-0.2++ doping gauss p.type conc=3e20 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=0.0+ + char.l=0.047 lat.rotate+ doping gauss n.type conc=5e17 x.l=0.0 x.h=5.0 y.l=-0.2 y.h=0.0+ + char.l=0.200 lat.rotate+ doping gauss n.type conc=1e20 x.l=0.0 x.h=0.5 y.l=-0.2 y.h=0.0+ + char.l=0.100 lat.rotate ratio=0.7+ doping unif p.type conc=1e16 x.l=0.0 x.h=5.0 y.l=0.0 y.h=1.3+ doping gauss p.type conc=5e19 x.l=0.0 x.h=5.0 y.l=1.3 y.h=1.3+ + char.l=0.100 lat.rotate++ method ac=direct itlim=10+ models bgn srh auger conctau concmob fieldmob*** Two-dimensional models for a* complementary MOS process.* Device models for 1um, 2um, 3um, 4um, 5um, 10um and 50um are provided.**.MODEL M_NMOS_1 numos+ output stat+ + x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0+ x.mesh w=0.4 h.s=0.005 h.m=0.1 r=2.0+ x.mesh w=0.4 h.e=0.005 h.m=0.1 r=2.0+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0+ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0++ y.mesh l=-.0200 n=1+ y.mesh l=0.0 n=6+ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0+ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0+ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0++ region num=1 material=1 y.h=0.0+ region num=2 material=2 y.l=0.0+ interface dom=2 nei=1 x.l=1 x.h=2 layer.width=0.0+ material num=1 oxide+ material num=2 silicon++ elec num=1 x.l=2.5 x.h=3.1 y.l=0.0 y.h=0.0+ elec num=2 x.l=1 x.h=2 iy.l=1 iy.h=1+ elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0+ elec num=4 x.l=-0.1 x.h=3.1 y.l=2.0 y.h=2.0++ doping gauss p.type conc=1.0e17 x.l=-0.1 x.h=3.1 y.l=0.0+ + char.l=0.30+ doping unif p.type conc=5.0e15 x.l=-0.1 x.h=3.1 y.l=0.0 y.h=2.1+ doping gauss n.type conc=4e17 x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0+ + char.l=0.16 lat.rotate ratio=0.65+ doping gauss n.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08+ + char.l=0.03 lat.rotate ratio=0.65+ doping gauss n.type conc=4e17 x.l=2 x.h=3.1 y.l=0.0 y.h=0.0+ + char.l=0.16 lat.rotate ratio=0.65+ doping gauss n.type conc=1e20 x.l=2.05 x.h=3.1 y.l=0.0 y.h=0.08+ + char.l=0.03 lat.rotate ratio=0.65++ contact num=2 workf=4.10+ models concmob surfmob transmob fieldmob srh auger conctau bgn + method ac=direct itlim=10 onec.MODEL M_NMOS_2 numos+ output stat+ + x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0+ x.mesh w=0.9 h.s=0.005 h.m=0.2 r=2.0+ x.mesh w=0.9 h.e=0.005 h.m=0.2 r=2.0+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0+ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0++ y.mesh l=-.0200 n=1+ y.mesh l=0.0 n=6+ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0+ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0+ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0++ region num=1 material=1 y.h=0.0+ region num=2 material=2 y.l=0.0+ interface dom=2 nei=1 x.l=1 x.h=3 layer.width=0.0+ material num=1 oxide+ material num=2 silicon++ elec num=1 x.l=3.5 x.h=4.1 y.l=0.0 y.h=0.0+ elec num=2 x.l=1 x.h=3 iy.l=1 iy.h=1+ elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0+ elec num=4 x.l=-0.1 x.h=4.1 y.l=2.0 y.h=2.0++ doping gauss p.type conc=1.0e17 x.l=-0.1 x.h=4.1 y.l=0.0+ + char.l=0.30+ doping unif p.type conc=5.0e15 x.l=-0.1 x.h=4.1 y.l=0.0 y.h=2.1+ doping gauss n.type conc=4e17 x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0+ + char.l=0.16 lat.rotate ratio=0.65+ doping gauss n.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08+ + char.l=0.03 lat.rotate ratio=0.65+ doping gauss n.type conc=4e17 x.l=3 x.h=4.1 y.l=0.0 y.h=0.0+ + char.l=0.16 lat.rotate ratio=0.65+ doping gauss n.type conc=1e20 x.l=3.05 x.h=4.1 y.l=0.0 y.h=0.08+ + char.l=0.03 lat.rotate ratio=0.65++ contact num=2 workf=4.10+ models concmob surfmob transmob fieldmob srh auger conctau bgn + method ac=direct itlim=10 onec.MODEL M_NMOS_3 numos+ output stat+ + x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0+ x.mesh w=1.4 h.s=0.005 h.m=0.3 r=2.0+ x.mesh w=1.4 h.e=0.005 h.m=0.3 r=2.0+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0+ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0++ y.mesh l=-.0200 n=1+ y.mesh l=0.0 n=6+ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0+ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0+ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0++ region num=1 material=1 y.h=0.0+ region num=2 material=2 y.l=0.0+ interface dom=2 nei=1 x.l=1 x.h=4 layer.width=0.0+ material num=1 oxide+ material num=2 silicon++ elec num=1 x.l=4.5 x.h=5.1 y.l=0.0 y.h=0.0+ elec num=2 x.l=1 x.h=4 iy.l=1 iy.h=1+ elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0+ elec num=4 x.l=-0.1 x.h=5.1 y.l=2.0 y.h=2.0++ doping gauss p.type conc=1.0e17 x.l=-0.1 x.h=5.1 y.l=0.0+ + char.l=0.30+ doping unif p.type conc=5.0e15 x.l=-0.1 x.h=5.1 y.l=0.0 y.h=2.1+ doping gauss n.type conc=4e17 x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0+ + char.l=0.16 lat.rotate ratio=0.65+ doping gauss n.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08+ + char.l=0.03 lat.rotate ratio=0.65+ doping gauss n.type conc=4e17 x.l=4 x.h=5.1 y.l=0.0 y.h=0.0+ + char.l=0.16 lat.rotate ratio=0.65+ doping gauss n.type conc=1e20 x.l=4.05 x.h=5.1 y.l=0.0 y.h=0.08+ + char.l=0.03 lat.rotate ratio=0.65++ contact num=2 workf=4.10+ models concmob surfmob transmob fieldmob srh auger conctau bgn + method ac=direct itlim=10 onec.MODEL M_NMOS_4 numos+ output stat+ + x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0+ x.mesh w=1.9 h.s=0.005 h.m=0.4 r=2.0+ x.mesh w=1.9 h.e=0.005 h.m=0.4 r=2.0+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0+ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0++ y.mesh l=-.0200 n=1+ y.mesh l=0.0 n=6+ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0+ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0+ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0++ region num=1 material=1 y.h=0.0+ region num=2 material=2 y.l=0.0+ interface dom=2 nei=1 x.l=1 x.h=5 layer.width=0.0+ material num=1 oxide+ material num=2 silicon++ elec num=1 x.l=5.5 x.h=6.1 y.l=0.0 y.h=0.0+ elec num=2 x.l=1 x.h=5 iy.l=1 iy.h=1+ elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0+ elec num=4 x.l=-0.1 x.h=6.1 y.l=2.0 y.h=2.0++ doping gauss p.type conc=1.0e17 x.l=-0.1 x.h=6.1 y.l=0.0+ + char.l=0.30+ doping unif p.type conc=5.0e15 x.l=-0.1 x.h=6.1 y.l=0.0 y.h=2.1+ doping gauss n.type conc=4e17 x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0+ + char.l=0.16 lat.rotate ratio=0.65+ doping gauss n.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08+ + char.l=0.03 lat.rotate ratio=0.65+ doping gauss n.type conc=4e17 x.l=5 x.h=6.1 y.l=0.0 y.h=0.0+ + char.l=0.16 lat.rotate ratio=0.65+ doping gauss n.type conc=1e20 x.l=5.05 x.h=6.1 y.l=0.0 y.h=0.08+ + char.l=0.03 lat.rotate ratio=0.65++ contact num=2 workf=4.10+ models concmob surfmob transmob fieldmob srh auger conctau bgn + method ac=direct itlim=10 onec.MODEL M_NMOS_5 numos+ output stat+ + x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0+ x.mesh w=2.4 h.s=0.005 h.m=0.5 r=2.0+ x.mesh w=2.4 h.e=0.005 h.m=0.5 r=2.0+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0+ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0++ y.mesh l=-.0200 n=1+ y.mesh l=0.0 n=6+ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0+ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0+ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0++ region num=1 material=1 y.h=0.0+ region num=2 material=2 y.l=0.0+ interface dom=2 nei=1 x.l=1 x.h=6 layer.width=0.0+ material num=1 oxide+ material num=2 silicon++ elec num=1 x.l=6.5 x.h=7.1 y.l=0.0 y.h=0.0+ elec num=2 x.l=1 x.h=6 iy.l=1 iy.h=1+ elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0+ elec num=4 x.l=-0.1 x.h=7.1 y.l=2.0 y.h=2.0++ doping gauss p.type conc=1.0e17 x.l=-0.1 x.h=7.1 y.l=0.0+ + char.l=0.30+ doping unif p.type conc=5.0e15 x.l=-0.1 x.h=7.1 y.l=0.0 y.h=2.1+ doping gauss n.type conc=4e17 x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0+ + char.l=0.16 lat.rotate ratio=0.65+ doping gauss n.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08+ + char.l=0.03 lat.rotate ratio=0.65+ doping gauss n.type conc=4e17 x.l=6 x.h=7.1 y.l=0.0 y.h=0.0+ + char.l=0.16 lat.rotate ratio=0.65+ doping gauss n.type conc=1e20 x.l=6.05 x.h=7.1 y.l=0.0 y.h=0.08+ + char.l=0.03 lat.rotate ratio=0.65++ contact num=2 workf=4.10+ models concmob surfmob transmob fieldmob srh auger conctau bgn + method ac=direct itlim=10 onec.MODEL M_NMOS_10 numos+ output stat+ + x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0+ x.mesh w=4.9 h.s=0.005 h.m=1 r=2.0+ x.mesh w=4.9 h.e=0.005 h.m=1 r=2.0+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0+ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0++ y.mesh l=-.0200 n=1+ y.mesh l=0.0 n=6+ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0+ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0+ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0++ region num=1 material=1 y.h=0.0+ region num=2 material=2 y.l=0.0+ interface dom=2 nei=1 x.l=1 x.h=11 layer.width=0.0⌨️ 快捷键说明
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