📄 mos1.c
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/* * Copyright (c) 1987 Thomas L. Quarles */#include "prefix.h"#include <stdio.h>#include "DEVdefs.h"#include "IFsim.h"#include "MOS1defs.h"#include "suffix.h"RCSID("MOS1.c $Revision: 1.4 $ on $Date: 90/11/09 16:34:19 $")static IFparm MOS1pTable[] = { /* parameters */ IOP("l", MOS1_L, IF_REAL , "Length"), IOP("w", MOS1_W, IF_REAL , "Width"), IOP("ad", MOS1_AD, IF_REAL , "Drain area"), IOP("as", MOS1_AS, IF_REAL , "Source area"), IOP("pd", MOS1_PD, IF_REAL , "Drain perimeter"), IOP("ps", MOS1_PS, IF_REAL , "Source perimeter"), IOP("nrd", MOS1_NRD, IF_REAL , "Drain squares"), IOP("nrs", MOS1_NRS, IF_REAL , "Source squares"), IP("off", MOS1_OFF, IF_FLAG , "Device initially off"), IOP("icvds", MOS1_IC_VDS, IF_REAL , "Initial D-S voltage"), IOP("icvgs", MOS1_IC_VGS, IF_REAL , "Initial G-S voltage"), IOP("icvbs", MOS1_IC_VBS, IF_REAL , "Initial B-S voltage"), IOP("temp", MOS1_TEMP, IF_REAL, "Instance temperature"), IP( "ic", MOS1_IC, IF_REALVEC, "Vector of D-S, G-S, B-S voltages"), IP( "sens_l", MOS1_L_SENS, IF_FLAG, "flag to request sensitivity WRT length"), IP( "sens_w", MOS1_W_SENS, IF_FLAG, "flag to request sensitivity WRT width"), OP( "cgs", MOS1_CGS, IF_REAL , "Gate-Source capacitance"), OP( "cgd", MOS1_CGD, IF_REAL , "Gate-Drain capacitance"), OP( "dnode", MOS1_DNODE, IF_INTEGER, "Number of the drain node "), OP( "gnode", MOS1_GNODE, IF_INTEGER, "Number of the gate node "), OP( "snode", MOS1_SNODE, IF_INTEGER, "Number of the source node "), OP( "bnode", MOS1_BNODE, IF_INTEGER, "Number of the node "), OP( "dnodeprime", MOS1_DNODEPRIME, IF_INTEGER, "Number of int. drain node"), OP( "snodeprime", MOS1_SNODEPRIME, IF_INTEGER, "Number of int. source node "), OP( "sourceconductance", MOS1_SOURCECONDUCT, IF_REAL, "Conductance of source"), OP( "drainconductance", MOS1_DRAINCONDUCT, IF_REAL, "Conductance of drain"), OP( "von", MOS1_VON, IF_REAL, " "), OP( "vdsat", MOS1_VDSAT, IF_REAL, "Saturation drain voltage"), OP( "sourcevcrit", MOS1_SOURCEVCRIT,IF_REAL, "Critical source voltage"), OP( "drainvcrit", MOS1_DRAINVCRIT, IF_REAL, "Critical drain voltage"), OP( "cd", MOS1_CD, IF_REAL, "Drain current"), OP( "cbs", MOS1_CBS, IF_REAL, "B-S junction capacitance"), OP( "cbd", MOS1_CBD, IF_REAL, "B-D junction capacitance"), OP( "gmbs", MOS1_GMBS, IF_REAL, "Bulk-Source transconductance"), OP( "gm", MOS1_GM, IF_REAL, "Transconductance"), OP( "gds", MOS1_GDS, IF_REAL, "Drain-Source conductance"), OP( "gbd", MOS1_GBD, IF_REAL, "Bulk-Drain conductance"), OP( "gbs", MOS1_GBS, IF_REAL, "Bulk-Source conductance"), OP( "capbd", MOS1_CAPBD, IF_REAL, "Bulk-Drain capacitance"), OP( "capbs", MOS1_CAPBS, IF_REAL, "Bulk-Source capacitance"), OP( "cbd0", MOS1_CAPZEROBIASBD, IF_REAL, "Zero-Bias B-D junction capacitance"), OP( "cbdsw0", MOS1_CAPZEROBIASBDSW, IF_REAL, " "), OP( "cbs0", MOS1_CAPZEROBIASBS, IF_REAL, "Zero-Bias B-S junction capacitance"), OP( "cbssw0", MOS1_CAPZEROBIASBSSW, IF_REAL, " "), OP( "vbd", MOS1_VBD, IF_REAL, "Bulk-Drain voltage"), OP( "vbs", MOS1_VBS, IF_REAL, "Bulk-Source voltage"), OP( "vgs", MOS1_VGS, IF_REAL, "Gate-Source voltage"), OP( "vds", MOS1_VDS, IF_REAL, "Drain-Source voltage"), OP( "capgs", MOS1_CAPGS, IF_REAL, "Gate-Source capacitance"), OP( "qgs", MOS1_QGS, IF_REAL, "Gate-Source charge storage"), OP( "cqgs",MOS1_CQGS,IF_REAL,"Capacitance due to gate-source charge storage"), OP( "capgd", MOS1_CAPGD, IF_REAL, "Gate-Drain capacitance"), OP( "qgd", MOS1_QGD, IF_REAL, "Gate-Drain charge storage"), OP( "cqgd",MOS1_CQGD,IF_REAL,"Capacitance due to gate-drain charge storage"), OP( "capgb", MOS1_CAPGB, IF_REAL, "Gate-Bulk capacitance"), OP( "qgb", MOS1_QGB, IF_REAL, "Gate-Bulk charge storage"), OP( "cqgb",MOS1_CQGB,IF_REAL,"Capacitance due to gate-bulk charge storage"), OP( "qbd", MOS1_QBD, IF_REAL, "Bulk-Drain charge storage"), OP( "cqbd",MOS1_CQBD,IF_REAL,"Capacitance due to bulk-drain charge storage"), OP( "qbs", MOS1_QBS, IF_REAL, "Bulk-Source charge storage"), OP( "cqbs",MOS1_CQBS,IF_REAL,"Capacitance due to bulk-source charge storage"), OP( "cs", MOS1_CS, IF_REAL, "Source current"), OP( "cg", MOS1_CG, IF_REAL, "Gate current "), OP( "cb", MOS1_CB, IF_REAL, "Bulk current "), OP( "p", MOS1_POWER, IF_REAL, "Instaneous power"), OP( "sens_l_dc", MOS1_L_SENS_DC, IF_REAL, "dc sensitivity wrt length"), OP( "sens_l_real", MOS1_L_SENS_REAL,IF_REAL, "real part of ac sensitivity wrt length"), OP( "sens_l_imag", MOS1_L_SENS_IMAG,IF_REAL, "imag part of ac sensitivity wrt length"), OP( "sens_l_mag", MOS1_L_SENS_MAG, IF_REAL, "sensitivity wrt l of ac magnitude"), OP( "sens_l_ph", MOS1_L_SENS_PH, IF_REAL, "sensitivity wrt l of ac phase"), OP( "sens_l_cplx", MOS1_L_SENS_CPLX,IF_COMPLEX, "ac sensitivity wrt length"), OP( "sens_w_dc", MOS1_W_SENS_DC, IF_REAL, "dc sensitivity wrt width"), OP( "sens_w_real", MOS1_W_SENS_REAL,IF_REAL, "real part of ac sensitivity wrt width"), OP( "sens_w_imag", MOS1_W_SENS_IMAG,IF_REAL, "imag part of ac sensitivity wrt width"), OP( "sens_w_mag", MOS1_W_SENS_MAG, IF_REAL, "sensitivity wrt w of ac magnitude"), OP( "sens_w_ph", MOS1_W_SENS_PH, IF_REAL, "sensitivity wrt w of ac phase"), OP( "sens_w_cplx", MOS1_W_SENS_CPLX,IF_COMPLEX, "ac sensitivity wrt width")};static IFparm MOS1mPTable[] = { /* model parameters */ IOP("vto", MOS1_MOD_VTO, IF_REAL ,"Threshold voltage"), IOP("vt0", MOS1_MOD_VTO, IF_REAL ,"Threshold voltage"), IOP("kp", MOS1_MOD_KP, IF_REAL ,"Transconductance parameter"), IOP("gamma", MOS1_MOD_GAMMA, IF_REAL ,"Bulk threshold parameter"), IOP("phi", MOS1_MOD_PHI, IF_REAL ,"Surface potential"), IOP("lambda",MOS1_MOD_LAMBDA,IF_REAL ,"Channel length modulation"), IOP("rd", MOS1_MOD_RD, IF_REAL ,"Drain ohmic resistance"), IOP("rs", MOS1_MOD_RS, IF_REAL ,"Source ohmic resistance"), IOP("cbd", MOS1_MOD_CBD, IF_REAL ,"B-D junction capacitance"), IOP("cbs", MOS1_MOD_CBS, IF_REAL ,"B-S junction capacitance"), IOP("is", MOS1_MOD_IS, IF_REAL ,"Bulk junction sat. current"), IOP("pb", MOS1_MOD_PB, IF_REAL ,"Bulk junction potential"), IOP("cgso", MOS1_MOD_CGSO, IF_REAL ,"Gate-source overlap cap."), IOP("cgdo", MOS1_MOD_CGDO, IF_REAL ,"Gate-drain overlap cap."), IOP("cgbo", MOS1_MOD_CGBO, IF_REAL ,"Gate-bulk overlap cap."), IOP("rsh", MOS1_MOD_RSH, IF_REAL ,"Sheet resistance"), IOP("cj", MOS1_MOD_CJ, IF_REAL ,"Bottom junction cap per area"), IOP("mj", MOS1_MOD_MJ, IF_REAL ,"Bottom grading coefficient"), IOP("cjsw", MOS1_MOD_CJSW, IF_REAL ,"Side junction cap per area"), IOP("mjsw", MOS1_MOD_MJSW, IF_REAL ,"Side grading coefficient"), IOP("js", MOS1_MOD_JS, IF_REAL ,"Bulk jct. sat. current density"), IOP("tox", MOS1_MOD_TOX, IF_REAL ,"Oxide thickness"), IOP("ld", MOS1_MOD_LD, IF_REAL ,"Lateral diffusion"), IOP("u0", MOS1_MOD_U0, IF_REAL ,"Surface mobility"), IOP("uo", MOS1_MOD_U0, IF_REAL ,"Surface mobility"), IOP("fc", MOS1_MOD_FC, IF_REAL ,"Forward bias jct. fit parm."), IP("nmos", MOS1_MOD_NMOS, IF_FLAG ,"N type MOSfet model"), IP("pmos", MOS1_MOD_PMOS, IF_FLAG ,"P type MOSfet model"), IOP("nsub", MOS1_MOD_NSUB, IF_REAL ,"Substrate doping"), IOP("tpg", MOS1_MOD_TPG, IF_INTEGER,"Gate type"), IOP("nss", MOS1_MOD_NSS, IF_REAL ,"Surface state density"), IOP("tnom", MOS1_MOD_TNOM, IF_REAL ,"Parameter measurement temperature"),};static char *MOS1names[] = { "Drain", "Gate", "Source", "Bulk"};SPICEdev MOS1info = {/* gtri - modify - wbk - 10/11/90 - add 0,NULL entries into IFdevice *//* structure for MIF element data */ { "Mos1", "Level 1 MOSfet model with Meyer capacitance model", sizeof(MOS1names)/sizeof(char *), sizeof(MOS1names)/sizeof(char *), MOS1names, sizeof(MOS1pTable)/sizeof(IFparm), MOS1pTable, sizeof(MOS1mPTable)/sizeof(IFparm), MOS1mPTable, NULL, /* This is a SPICE device, it has no MIF info data */ 0, /* This is a SPICE device, it has no MIF info data */ NULL, /* This is a SPICE device, it has no MIF info data */ 0, /* This is a SPICE device, it has no MIF info data */ NULL, /* This is a SPICE device, it has no MIF info data */ 0, /* This is a SPICE device, it has no MIF info data */ NULL, /* This is a SPICE device, it has no MIF info data */ },/* gtri - end - wbk - 10/11/90 */ MOS1param, MOS1mParam, MOS1load, MOS1setup, MOS1setup, MOS1temp, MOS1trunc, NULL, MOS1acLoad, NULL, MOS1destroy,#ifdef DELETES MOS1mDelete, MOS1delete,#else /* DELETES */ NULL, NULL,#endif /* DELETES */ MOS1getic, MOS1ask, NULL, MOS1pzLoad,#ifdef NEWCONV MOS1convTest,#else /* NEWCONV */ NULL,#endif /* NEWCONV */#ifndef NOSENS MOS1sSetup, MOS1sLoad, MOS1sUpdate, MOS1sAcLoad, MOS1sPrint, NULL,#else /* NOSENS */ NULL, NULL, NULL, NULL, NULL, NULL,#endif /* NOSENS */ sizeof(MOS1instance), sizeof(MOS1model),};
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