mos1defs.h

支持数字元件仿真的SPICE插件

/*
 * Copyright (c) 1985 Thomas L. Quarles
 */

#ifndef MOS1
#define MOS1 "MOS1defs.h $Revision: 1.1 $ on $Date: 91/04/02 11:26:25 $"

#include "IFsim.h"
#include "CKTdefs.h"
#include "GENdefs.h"
#include "complex.h"

/* declarations for level 1 MOSFETs */

/* information needed for each instance */

typedef struct sMOS1instance {
    struct sMOS1model *sMOS1modPtr; /* backpointer to model */
    struct sMOS1instance *MOS1nextInstance;  /* pointer to next instance of
                                              *current model*/
    IFuid MOS1name; /* pointer to character string naming this instance */

    int MOS1dNode;  /* number of the gate node of the mosfet */
    int MOS1gNode;  /* number of the gate node of the mosfet */
    int MOS1sNode;  /* number of the source node of the mosfet */
    int MOS1bNode;  /* number of the bulk node of the mosfet */
    int MOS1dNodePrime; /* number of the internal drain node of the mosfet */
    int MOS1sNodePrime; /* number of the internal source node of the mosfet */

    double MOS1l;   /* the length of the channel region */
    double MOS1w;   /* the width of the channel region */
    double MOS1drainArea;   /* the area of the drain diffusion */
    double MOS1sourceArea;  /* the area of the source diffusion */
    double MOS1drainSquares;    /* the length of the drain in squares */
    double MOS1sourceSquares;   /* the length of the source in squares */
    double MOS1drainPerimiter;
    double MOS1sourcePerimiter;
    double MOS1sourceConductance;   /*conductance of source(or 0):set in setup*/
    double MOS1drainConductance;    /*conductance of drain(or 0):set in setup*/
    double MOS1temp;    /* operating temperature of this instance */

    double MOS1tTransconductance;   /* temperature corrected transconductance*/
    double MOS1tSurfMob;            /* temperature corrected surface mobility */
    double MOS1tPhi;                /* temperature corrected Phi */
    double MOS1tVto;                /* temperature corrected Vto */
    double MOS1tSatCur;             /* temperature corrected saturation Cur. */
    double MOS1tSatCurDens; /* temperature corrected saturation Cur. density*/
    double MOS1tCbd;                /* temperature corrected B-D Capacitance */
    double MOS1tCbs;                /* temperature corrected B-S Capacitance */
    double MOS1tCj;         /* temperature corrected Bulk bottom Capacitance */
    double MOS1tCjsw;       /* temperature corrected Bulk side Capacitance */
    double MOS1tBulkPot;    /* temperature corrected Bulk potential */
    double MOS1tDepCap;     /* temperature adjusted transition point in */
                            /* the cureve matching Fc * Vj */
    double MOS1tVbi;        /* temperature adjusted Vbi */

    double MOS1icVBS;   /* initial condition B-S voltage */
    double MOS1icVDS;   /* initial condition D-S voltage */
    double MOS1icVGS;   /* initial condition G-S voltage */
    double MOS1von;
    double MOS1vdsat;
    double MOS1sourceVcrit; /* Vcrit for pos. vds */
    double MOS1drainVcrit;  /* Vcrit for pos. vds */
    double MOS1cd;
    double MOS1cbs;
    double MOS1cbd;
    double MOS1gmbs;
    double MOS1gm;
    double MOS1gds;
    double MOS1gbd;
    double MOS1gbs;
    double MOS1capbd;
    double MOS1capbs;
    double MOS1Cbd;
    double MOS1Cbdsw;
    double MOS1Cbs;
    double MOS1Cbssw;
    double MOS1f2d;
    double MOS1f3d;
    double MOS1f4d;
    double MOS1f2s;
    double MOS1f3s;
    double MOS1f4s;
    int MOS1mode;       /* device mode : 1 = normal, -1 = inverse */


    unsigned MOS1off:1;  /* non-zero to indicate device is off for dc analysis*/
    unsigned MOS1tempGiven :1;  /* instance temperature specified */
    unsigned MOS1lGiven :1;
    unsigned MOS1wGiven :1;
    unsigned MOS1drainAreaGiven :1;
    unsigned MOS1sourceAreaGiven    :1;
    unsigned MOS1drainSquaresGiven  :1;
    unsigned MOS1sourceSquaresGiven :1;
    unsigned MOS1drainPerimiterGiven    :1;
    unsigned MOS1sourcePerimiterGiven   :1;
    unsigned MOS1dNodePrimeSet  :1;
    unsigned MOS1sNodePrimeSet  :1;
    unsigned MOS1icVBSGiven :1;
    unsigned MOS1icVDSGiven :1;
    unsigned MOS1icVGSGiven :1;
    unsigned MOS1vonGiven   :1;
    unsigned MOS1vdsatGiven :1;
    unsigned MOS1modeGiven  :1;


    double *MOS1DdPtr;      /* pointer to sparse matrix element at
                                     * (Drain node,drain node) */
    double *MOS1GgPtr;      /* pointer to sparse matrix element at
                                     * (gate node,gate node) */
    double *MOS1SsPtr;      /* pointer to sparse matrix element at
                                     * (source node,source node) */
    double *MOS1BbPtr;      /* pointer to sparse matrix element at
                                     * (bulk node,bulk node) */
    double *MOS1DPdpPtr;    /* pointer to sparse matrix element at
                                     * (drain prime node,drain prime node) */
    double *MOS1SPspPtr;    /* pointer to sparse matrix element at
                                     * (source prime node,source prime node) */
    double *MOS1DdpPtr;     /* pointer to sparse matrix element at
                                     * (drain node,drain prime node) */
    double *MOS1GbPtr;      /* pointer to sparse matrix element at
                                     * (gate node,bulk node) */
    double *MOS1GdpPtr;     /* pointer to sparse matrix element at
                                     * (gate node,drain prime node) */
    double *MOS1GspPtr;     /* pointer to sparse matrix element at
                                     * (gate node,source prime node) */
    double *MOS1SspPtr;     /* pointer to sparse matrix element at
                                     * (source node,source prime node) */
    double *MOS1BdpPtr;     /* pointer to sparse matrix element at
                                     * (bulk node,drain prime node) */
    double *MOS1BspPtr;     /* pointer to sparse matrix element at
                                     * (bulk node,source prime node) */
    double *MOS1DPspPtr;    /* pointer to sparse matrix element at
                                     * (drain prime node,source prime node) */
    double *MOS1DPdPtr;     /* pointer to sparse matrix element at
                                     * (drain prime node,drain node) */
    double *MOS1BgPtr;      /* pointer to sparse matrix element at
                                     * (bulk node,gate node) */
    double *MOS1DPgPtr;     /* pointer to sparse matrix element at
                                     * (drain prime node,gate node) */

    double *MOS1SPgPtr;     /* pointer to sparse matrix element at
                                     * (source prime node,gate node) */
    double *MOS1SPsPtr;     /* pointer to sparse matrix element at
                                     * (source prime node,source node) */
    double *MOS1DPbPtr;     /* pointer to sparse matrix element at
                                     * (drain prime node,bulk node) */
    double *MOS1SPbPtr;     /* pointer to sparse matrix element at
                                     * (source prime node,bulk node) */
    double *MOS1SPdpPtr;    /* pointer to sparse matrix element at
                                     * (source prime node,drain prime node) */

    int MOS1states;     /* index into state table for this device */
#define MOS1vbd MOS1states+ 0   /* bulk-drain voltage */
#define MOS1vbs MOS1states+ 1   /* bulk-source voltage */
#define MOS1vgs MOS1states+ 2   /* gate-source voltage */
#define MOS1vds MOS1states+ 3   /* drain-source voltage */

#define MOS1capgs MOS1states+4  /* gate-source capacitor value */
#define MOS1qgs MOS1states+ 5   /* gate-source capacitor charge */
#define MOS1cqgs MOS1states+ 6  /* gate-source capacitor current */

#define MOS1capgd MOS1states+ 7 /* gate-drain capacitor value */
#define MOS1qgd MOS1states+ 8   /* gate-drain capacitor charge */
#define MOS1cqgd MOS1states+ 9  /* gate-drain capacitor current */

#define MOS1capgb MOS1states+10 /* gate-bulk capacitor value */
#define MOS1qgb MOS1states+ 11  /* gate-bulk capacitor charge */
#define MOS1cqgb MOS1states+ 12 /* gate-bulk capacitor current */

#define MOS1qbd MOS1states+ 13  /* bulk-drain capacitor charge */
#define MOS1cqbd MOS1states+ 14 /* bulk-drain capacitor current */

#define MOS1qbs MOS1states+ 15  /* bulk-source capacitor charge */
#define MOS1cqbs MOS1states+ 16 /* bulk-source capacitor current */

#define MOS1numStates 17

#define MOS1sensxpgs MOS1states+17 /* charge sensitivities and 
          their derivatives.  +18 for the derivatives:
          pointer to the beginning of the array */
#define MOS1sensxpgd  MOS1states+19
#define MOS1sensxpgb  MOS1states+21
#define MOS1sensxpbs  MOS1states+23
#define MOS1sensxpbd  MOS1states+25

#define MOS1numSenStates 10

    int  MOS1senParmNo;   /* parameter # for sensitivity use;
            set equal to 0  if  neither length
            nor width of the mosfet is a design
            parameter */
    unsigned MOS1sens_l :1;   /* field which indicates whether  
            length of the mosfet is a design
            parameter or not */
    unsigned MOS1sens_w :1;   /* field which indicates whether  
            width of the mosfet is a design
            parameter or not */
    unsigned MOS1senPertFlag :1; /* indictes whether the the 
            parameter of the particular instance is 
            to be perturbed */
    double MOS1cgs;
    double MOS1cgd;
    double MOS1cgb;
    double *MOS1sens;

#define MOS1senCgs MOS1sens /* contains pertured values of cgs */
#define MOS1senCgd MOS1sens + 6 /* contains perturbed values of cgd*/
#define MOS1senCgb MOS1sens + 12 /* contains perturbed values of cgb*/
#define MOS1senCbd MOS1sens + 18 /* contains perturbed values of cbd*/
#define MOS1senCbs MOS1sens + 24 /* contains perturbed values of cbs*/
#define MOS1senGds MOS1sens + 30 /* contains perturbed values of gds*/
#define MOS1senGbs MOS1sens + 36 /* contains perturbed values of gbs*/
#define MOS1senGbd MOS1sens + 42 /* contains perturbed values of gbd*/
#define MOS1senGm MOS1sens + 48 /* contains perturbed values of gm*/
#define MOS1senGmbs MOS1sens + 54 /* contains perturbed values of gmbs*/
#define MOS1dphigs_dl MOS1sens + 60
#define MOS1dphigd_dl MOS1sens + 61
#define MOS1dphigb_dl MOS1sens + 62
#define MOS1dphibs_dl MOS1sens + 63
#define MOS1dphibd_dl MOS1sens + 64
#define MOS1dphigs_dw MOS1sens + 65
#define MOS1dphigd_dw MOS1sens + 66
#define MOS1dphigb_dw MOS1sens + 67
#define MOS1dphibs_dw MOS1sens + 68
#define MOS1dphibd_dw MOS1sens + 69

} MOS1instance ;


/* per model data */

    /* NOTE:  parameters marked 'input - use xxxx' are paramters for
     * which a temperature correction is applied in MOS1temp, thus
     * the MOS1xxxx value in the per-instance structure should be used
     * instead in all calculations 
     */