mos2defs.h

支持数字元件仿真的SPICE插件

/*
 * Copyright (c) 1985 Thomas L. Quarles
 */

#ifndef MOS2
#define MOS2 "MOS2defs.h $Revision: 1.1 $ on $Date: 91/04/02 11:26:28 $"

#include "IFsim.h"
#include "CKTdefs.h"
#include "GENdefs.h"
#include "complex.h"

/* declarations for level 2 MOSFETs */

/* information needed for each instance */

typedef struct sMOS2instance {
    struct sMOS2model *MOS2modPtr;  /* backpointer to model */
    struct sMOS2instance *MOS2nextInstance;  /* pointer to next instance of
                                              *current model*/
    IFuid MOS2name; /* pointer to character string naming this instance */

    int MOS2dNode;  /* number of the gate node of the mosfet */
    int MOS2gNode;  /* number of the gate node of the mosfet */
    int MOS2sNode;  /* number of the source node of the mosfet */
    int MOS2bNode;  /* number of the bulk node of the mosfet */
    int MOS2dNodePrime; /* number of the internal drain node of the mosfet */
    int MOS2sNodePrime; /* number of the internal source node of the mosfet */



    int MOS2mode;       /* device mode : 1 = normal, -1 = inverse */

    unsigned MOS2off :1;/* non-zero to indicate device is off for dc analysis*/
    unsigned MOS2lGiven :1;
    unsigned MOS2wGiven :1;
    unsigned MOS2drainAreaGiven :1;
    unsigned MOS2sourceAreaGiven    :1;
    unsigned MOS2drainSquaresGiven  :1;
    unsigned MOS2sourceSquaresGiven :1;
    unsigned MOS2drainPerimiterGiven    :1;
    unsigned MOS2sourcePerimiterGiven   :1;
    unsigned MOS2dNodePrimeSet  :1;
    unsigned MOS2sNodePrimeSet  :1;
    unsigned MOS2icVBSGiven :1;
    unsigned MOS2icVDSGiven :1;
    unsigned MOS2icVGSGiven :1;
    unsigned MOS2vonGiven   :1;
    unsigned MOS2vdsatGiven :1;
    unsigned MOS2tempGiven  :1; /* per-instance temperature specified? */
    unsigned MOS2sens_l :1;   /* field which indicates whether  
                                  length of the mosfet is a design
                                  parameter or not */
    unsigned MOS2sens_w :1;   /* field which indicates whether  
                                  width of the mosfet is a design
                                  parameter or not */
    unsigned MOS2senPertFlag :1; /* indictes whether the the parameter of
                            the particular instance is to be perturbed */


    double *MOS2DdPtr;      /* pointer to sparse matrix element at
                                     * (Drain node,drain node) */
    double *MOS2GgPtr;      /* pointer to sparse matrix element at
                                     * (gate node,gate node) */
    double *MOS2SsPtr;      /* pointer to sparse matrix element at
                                     * (source node,source node) */
    double *MOS2BbPtr;      /* pointer to sparse matrix element at
                                     * (bulk node,bulk node) */
    double *MOS2DPdpPtr;    /* pointer to sparse matrix element at
                                     * (drain prime node,drain prime node) */
    double *MOS2SPspPtr;    /* pointer to sparse matrix element at
                                     * (source prime node,source prime node) */
    double *MOS2DdpPtr;     /* pointer to sparse matrix element at
                                     * (drain node,drain prime node) */
    double *MOS2GbPtr;      /* pointer to sparse matrix element at
                                     * (gate node,bulk node) */
    double *MOS2GdpPtr;     /* pointer to sparse matrix element at
                                     * (gate node,drain prime node) */
    double *MOS2GspPtr;     /* pointer to sparse matrix element at
                                     * (gate node,source prime node) */
    double *MOS2SspPtr;     /* pointer to sparse matrix element at
                                     * (source node,source prime node) */
    double *MOS2BdpPtr;     /* pointer to sparse matrix element at
                                     * (bulk node,drain prime node) */
    double *MOS2BspPtr;     /* pointer to sparse matrix element at
                                     * (bulk node,source prime node) */
    double *MOS2DPspPtr;    /* pointer to sparse matrix element at
                                     * (drain prime node,source prime node) */
    double *MOS2DPdPtr;     /* pointer to sparse matrix element at
                                     * (drain prime node,drain node) */
    double *MOS2BgPtr;      /* pointer to sparse matrix element at
                                     * (bulk node,gate node) */
    double *MOS2DPgPtr;     /* pointer to sparse matrix element at
                                     * (drain prime node,gate node) */

    double *MOS2SPgPtr;     /* pointer to sparse matrix element at
                                     * (source prime node,gate node) */
    double *MOS2SPsPtr;     /* pointer to sparse matrix element at
                                     * (source prime node,source node) */
    double *MOS2DPbPtr;     /* pointer to sparse matrix element at
                                     * (drain prime node,bulk node) */
    double *MOS2SPbPtr;     /* pointer to sparse matrix element at
                                     * (source prime node,bulk node) */
    double *MOS2SPdpPtr;    /* pointer to sparse matrix element at
                                     * (source prime node,drain prime node) */

    int MOS2states;     /* index into state table for this device */
#define MOS2vbd MOS2states+ 0   /* bulk-drain voltage */
#define MOS2vbs MOS2states+ 1   /* bulk-source voltage */
#define MOS2vgs MOS2states+ 2   /* gate-source voltage */
#define MOS2vds MOS2states+ 3   /* drain-source voltage */

#define MOS2capgs MOS2states+4  /* gate-source capacitor value */
#define MOS2qgs MOS2states+ 5   /* gate-source capacitor charge */
#define MOS2cqgs MOS2states+ 6  /* gate-source capacitor current */

#define MOS2capgd MOS2states+ 7 /* gate-drain capacitor value */
#define MOS2qgd MOS2states+ 8   /* gate-drain capacitor charge */
#define MOS2cqgd MOS2states+ 9  /* gate-drain capacitor current */

#define MOS2capgb MOS2states+10 /* gate-bulk capacitor value */
#define MOS2qgb MOS2states+ 11  /* gate-bulk capacitor charge */
#define MOS2cqgb MOS2states+ 12 /* gate-bulk capacitor current */

#define MOS2qbd MOS2states+ 13  /* bulk-drain capacitor charge */
#define MOS2cqbd MOS2states+ 14 /* bulk-drain capacitor current */

#define MOS2qbs MOS2states+ 15  /* bulk-source capacitor charge */
#define MOS2cqbs MOS2states+ 16 /* bulk-source capacitor current */

#define MOS2numStates 17


#define MOS2sensxpgs MOS2states+17 /* charge sensitivities and their derivatives
                                     +18 for the derivatives - pointer to the
                     beginning of the array */
#define MOS2sensxpgd  MOS2states+19
#define MOS2sensxpgb  MOS2states+21
#define MOS2sensxpbs  MOS2states+23
#define MOS2sensxpbd  MOS2states+25

#define MOS2numSenStates 10

    int  MOS2senParmNo;   /* parameter # for sensitivity use;
            set equal to 0  if  neither length
            nor width of the mosfet is a design
            parameter */
    double MOS2cgs;
    double MOS2cgd;
    double MOS2cgb;
    double *MOS2sens;

#define MOS2senCgs MOS2sens /* contains pertured values of cgs */
#define MOS2senCgd MOS2sens + 6 /* contains perturbed values of cgd*/
#define MOS2senCgb MOS2sens + 12 /* contains perturbed values of cgb*/
#define MOS2senCbd MOS2sens + 18 /* contains perturbed values of cbd*/
#define MOS2senCbs MOS2sens + 24 /* contains perturbed values of cbs*/
#define MOS2senGds MOS2sens + 30 /* contains perturbed values of gds*/
#define MOS2senGbs MOS2sens + 36 /* contains perturbed values of gbs*/
#define MOS2senGbd MOS2sens + 42 /* contains perturbed values of gbd*/
#define MOS2senGm MOS2sens + 48 /* contains perturbed values of gm*/
#define MOS2senGmbs MOS2sens + 54 /* contains perturbed values of gmbs*/
#define MOS2dphigs_dl MOS2sens + 60
#define MOS2dphigd_dl MOS2sens + 61
#define MOS2dphigb_dl MOS2sens + 62
#define MOS2dphibs_dl MOS2sens + 63
#define MOS2dphibd_dl MOS2sens + 64
#define MOS2dphigs_dw MOS2sens + 65
#define MOS2dphigd_dw MOS2sens + 66
#define MOS2dphigb_dw MOS2sens + 67
#define MOS2dphibs_dw MOS2sens + 68
#define MOS2dphibd_dw MOS2sens + 69

    double MOS2temp;        /* temperature at which this instance operates */
    double MOS2tTransconductance;   /* temperature corrected transconductance*/
    double MOS2tSurfMob;            /* temperature corrected surface mobility */
    double MOS2tPhi;                /* temperature corrected Phi */
    double MOS2tVto;                /* temperature corrected Vto */
    double MOS2tSatCur;             /* temperature corrected saturation Cur. */
    double MOS2tSatCurDens; /* temperature corrected saturation Cur. density*/
    double MOS2tCbd;                /* temperature corrected B-D Capacitance */
    double MOS2tCbs;                /* temperature corrected B-S Capacitance */
    double MOS2tCj;         /* temperature corrected Bulk bottom Capacitance */
    double MOS2tCjsw;       /* temperature corrected Bulk side Capacitance */
    double MOS2tBulkPot;    /* temperature corrected Bulk potential */
    double MOS2tDepCap;     /* temperature adjusted transition point in */
                            /* the cureve matching Fc * Vj */
    double MOS2tVbi;        /* temperature adjusted Vbi */

    double MOS2l;   /* the length of the channel region */
    double MOS2w;   /* the width of the channel region */
    double MOS2drainArea;   /* the area of the drain diffusion */
    double MOS2sourceArea;  /* the area of the source diffusion */
    double MOS2drainSquares;    /* the length of the drain in squares */
    double MOS2sourceSquares;   /* the length of the source in squares */
    double MOS2drainPerimiter;
    double MOS2sourcePerimiter;
    double MOS2sourceConductance;   /*conductance of source(or 0):set in setup*/
    double MOS2drainConductance;    /*conductance of drain(or 0):set in setup*/

    double MOS2icVBS;   /* initial condition B-S voltage */
    double MOS2icVDS;   /* initial condition D-S voltage */
    double MOS2icVGS;   /* initial condition G-S voltage */
    double MOS2von;
    double MOS2vdsat;
    double MOS2sourceVcrit; /* Vcrit for pos. vds */
    double MOS2drainVcrit;  /* Vcrit for pos. vds */
    double MOS2cd;
    double MOS2cbs;
    double MOS2cbd;
    double MOS2gmbs;
    double MOS2gm;
    double MOS2gds;
    double MOS2gbd;
    double MOS2gbs;
    double MOS2capbd;
    double MOS2capbs;
    double MOS2Cbd;
    double MOS2Cbdsw;
    double MOS2Cbs;
    double MOS2Cbssw;
    double MOS2f2d;
    double MOS2f3d;
    double MOS2f4d;
    double MOS2f2s;
    double MOS2f3s;
    double MOS2f4s;



} MOS2instance ;


/* per model data */


        /* NOTE:  parameters makred 'input - use xxxx' are parameters for
         * which a temperature correction is applied in MOS2temp, thus
         * the MOS3xxxx value in the per-instance structure should be used
         * instead in all calculations
         */

typedef struct sMOS2model {       /* model structure for a resistor */
    int MOS2modType;    /* type index of this device type */
    struct sMOS2model *MOS2nextModel;    /* pointer to next possible model 
                                          *in linked list */
    MOS2instance * MOS2instances; /* pointer to list of instances 
                                   * that have this model */
    IFuid MOS2modName;       /* pointer to character string naming this model */
    int MOS2type;       /* device type : 1 = nmos,  -1 = pmos */