📄 spice.txt
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TEXT: H SPICE if process parameters (GNSUB, TOXH, ...) are given, butTEXT: H user-specified values always override. GVTO His positiveTEXT: H (negative) for enhancement mode and negative (positive) forTEXT: H depletion mode N-channel (P-channel) devices. Charge storageTEXT: H is modeled by three constant capacitors, GCGSO, CGDO, HandTEXT: H GCGBO Hwhich represent overlap capacitances, by the nonlinearTEXT: H thin-oxide capacitance which is distributed among the gate,TEXT: H source, drain, and bulk regions, and by the nonlinearTEXT: H depletion-layer capacitances for both substrate junctionsTEXT: H divided into bottom and periphery, which vary as the GMJ HandTEXT: H GMJSW Hpower of junction voltage respectively, and are deter-TEXT: H mined by the parameters GCBD, CBS, CJ, CJSW, MJ, MJSW Hand GPBH.TEXT: H Charge storage effects are modeled by the piecewise linearTEXT: H voltags-dependent capacitance model proposed by Meyer. TheTEXT: H thin-oxide charge storage effects are treated slightly dif-TEXT: H ferent for the LEVEL = 1 model. These voltage-dependentTEXT: H capacitances are included only if GTOX His specified in theTEXT: H input description and they are represented using Meyer'sTEXT: H formulation.TEXT: HTEXT: There is some overlap among the parameters describingTEXT: H the junctions, e.g. the reverse current can be input eitherTEXT: H as GIS H(in A) or as GJS H(in A/m**2). Whereas the first is anTEXT: H absolute value the second is multiplied by GAD Hand GAS Hto giveTEXT: H the reverse current of the drain and source junctionsTEXT: H respectively. This methodology has been chosen since thereTEXT: H is no sense in relating always junction characteristics withTEXT: H GAD Hand GAS Hentered on the device line; the areas can beTEXT: H defaulted. The same idea applies also to the zero-biasTEXT: H junction capacitances GCBD Hand GCBS H(in F) on one hand, and GCJTEXT: H H(in F/m**2) on the other. The parasitic drain and sourceTEXT: H series resistance can be expressed as either GRD Hand GRS H(inTEXT: H ohms) or GRSH H(in ohms/sq.), the latter being multiplied byTEXT: H the number of squares GNRD Hand GNRS Hinput on the device line.TEXT: HTEXT: SPICE level 1 to level 3 parameters.TEXT: H name parameter units default exampleTEXT: HTEXT: HTEXT: TEXT: 1 GLEVEL Hmodel index - 1TEXT: H 2 GVTO Hzero-bias threshold voltage V 0.0 1.0TEXT: H 3 GKP Htransconductance parameter A/V**2 2.0E-5 3.1E-5TEXT: H 4 GGAMMA Hbulk threshold parameter V**0.5 0.0 0.37TEXT: H 5 GPHI Hsurface potential V 0.6 0.65TEXT: H 6 GLAMBDA Hchannel-length modulationTEXT: H (MOS1 and MOS2 only) 1/V 0.0 0.02TEXT: H 7 GRD Hdrain ohmic resistance Ohm 0.0 1.0TEXT: H 8 GRS Hsource ohmic resistance Ohm 0.0 1.0TEXT: H 9 GCBD Hzero-bias B-D junction capacitance F 0.0 20FFTEXT: H 10 GCBS Hzero-bias B-S junction capacitance F 0.0 20FFTEXT: H 11 GIS Hbulk junction saturation current A 1.0E-14 1.0E-15TEXT: H 12 GPB Hbulk junction potential V 0.8 0.87TEXT: H 13 GCGSO Hgate-source overlap capacitanceTEXT: H per meter channel width F/m 0.0 4.0E-11TEXT: H 14 GCGDO Hgate-drain overlap capacitanceTEXT: H per meter channel width F/m 0.0 4.0E-11TEXT: H 15 GCGBO Hgate-bulk overlap capacitanceTEXT: H per meter channel length F/m 0.0 2.0E-10TEXT: H 16 GRSH Hdrain and source diffusionTEXT: H sheet resistance Ohm/sq. 0.0 10.0TEXT: H 17 GCJ Hzero-bias bulk junction bottom cap.TEXT: H per sq-meter of junction area F/m**2 0.0 2.0E-4TEXT: H 18 GMJ Hbulk junction bottom grading coef. - 0.5 0.5TEXT: H 19 GCJSW Hzero-bias bulk junction sidewall cap.TEXT: H per meter of junction perimeter F/m 0.0 1.0E-9TEXT: H 20 GMJSW Hbulk junction sidewall grading coef. - 0.50(level1)TEXT: H 0.33(level2,3)TEXT: H 21 GJS Hbulk junction saturation currentTEXT: H per sq-meter of junction area A/m**2 1.0E-8TEXT: H 22 GTOX Hoxide thickness meter 1.0E-7 1.0E-7TEXT: H 23 GNSUB Hsubstrate doping 1/cm**3 0.0 4.0E15TEXT: H 24 GNSS Hsurface state density 1/cm**2 0.0 1.0E10TEXT: H 25 GNFS Hfast surface state density 1/cm**2 0.0 1.0E10TEXT: H 26 GTPG Htype of gate material: - 1.0TEXT: H +1 opp. to substrateTEXT: H -1 same as substrateTEXT: H 0 Al gateTEXT: H 27 GXJ Hmetallurgical junction depth meter 0.0 1UTEXT: H 28 GLD Hlateral diffusion meter 0.0 0.8UTEXT: H 29 GUO Hsurface mobility cm**2/V-s 600 700TEXT: H 30 GUCRIT Hcritical field for mobilityTEXT: H degradation (MOS2 only) V/cm 1.0E4 1.0E4TEXT: H 31 GUEXP Hcritical field exponent inTEXT: H mobility degradation (MOS2 only) - 0.0 0.1TEXT: H 32 GUTRA Htransverse field coef (mobility)TEXT: H (deleted for MOS2) - 0.0 0.3TEXT: H 33 GVMAX Hmaximum drift velocity of carriers m/s 0.0 5.0E4TEXT: H 34 GNEFF Htotal channel charge (fixed andTEXT: H mobile) coefficient (MOS2 only) - 1.0 5.0TEXT: H 35 GKF Hflicker noise coefficient - 0.0 1.0E-26TEXT: H 36 GAF Hflicker noise exponent - 1.0 1.2TEXT: H 37 GFC Hcoefficient for forward-biasTEXT: HTEXT: TEXT: depletion capacitance formula - 0.5TEXT: H 38 GDELTA Hwidth effect on threshold voltageTEXT: H (MOS2 and MOS3) - 0.0 1.0TEXT: H 39 GTHETA Hmobility modulation (MOS3 only) 1/V 0.0 0.1TEXT: H 40 GETA Hstatic feedback (MOS3 only) - 0.0 1.0TEXT: H 41 GKAPPA Hsaturation field factor (MOS3 only) - 0.2 0.5TEXT: HTEXT: TEXT: The level 4 parameters are all values obtained fromTEXT: H process characterization, and can be generated automati-TEXT: H cally. J. Pierret [3] describes a means of generating aTEXT: H 'process' file, and the program GProc2Mod Hprovided withTEXT: H SPICE3 will convert this file into a sequence of G.MODELTEXT: H Hlines suitable for inclusion in a SPICE circuit file.TEXT: H Parameters marked below with an * in the l/w column alsoTEXT: H have corresponding parameters with a length and width depen-TEXT: H dency. For example, GVFB His the basic parameter with unitsTEXT: H of Volts, and GLVFB Hand GWVFB Halso exist and have units ofTEXT: H Volt-umeter The formulaTEXT: HTEXT: P=P0+LeffectiveTEXT: PL__________+WeffectiveTEXT: PW__________TEXT: HTEXT: is used to evaluate the parameter for the actual deviceTEXT: H specified withTEXT: HTEXT: Leffective=Linput-DLTEXT: HTEXT: andTEXT: HTEXT: Weffective=Winput-DWTEXT: HTEXT: TEXT: Note that unlike the other models in SPICE, the BSIMTEXT: H model is designed for use with a process characterizationTEXT: H system that provides all the parameters, thus there are noTEXT: H defaults for the parameters, and leaving one out is con-TEXT: H sidered an error. For an example set of parameters and theTEXT: H format of a process file, see the SPICE2 implementationTEXT: H notes[2].TEXT: HTEXT: SPICE BSIM (level 4) parameters.TEXT: H name parameter units l/wTEXT: HTEXT: H GVFB Hflat-band voltage V *TEXT: H GPHI Hsurface inversion potential V *TEXT: H GK1 Hbody effect coefficient V1/2 *TEXT: H GK2 Hdrain/source depletion charge sharing coefficient - *TEXT: H GETA Hzero-bias drain-induced barrier lowering coefficient - *TEXT: H GMUZ Hzero-bias mobility cm2/V-sTEXT: H GDL Hshortening of channel umTEXT: H GDW Hnarrowing of channel umTEXT: HTEXT: TEXT: GU0 Hzero-bias transverse-field mobility degradation coefficient V-1 *TEXT: H GU1 Hzero-bias velocity saturation coefficient um/V *TEXT: H GX2MZ Hsens. of mobility to substrate bias at vds=0 cm2/V2-s *TEXT: H GX2E Hsens. of drain-induced barrier lowering effect to substrate bias V-1 *TEXT: H GX3E Hsens. of drain-induced barrier lowering effect to drain bias at Vds=Vdd V-1 *TEXT: H GX2U0 Hsens. of transverse field mobility degradation effect to substrate bias V-2 *TEXT: H GX2U1 Hsens. of velocity saturation effect to substrate bias umV-2 *TEXT: H GMUS Hmobility at zero substrate bias and at Vds=Vdd cm2/V2-sTEXT: H GX2MS Hsens. of mobility to substrate bias at Vds=Vdd cm2/V2-s *TEXT: H GX3MS Hsens. of mobility to drain bias at Vds=Vdd cm2/V2-s *TEXT: H GX3U1 Hsens. of velocity saturation effect on drain bias at Vds=Vdd umV-2 *TEXT: H GTOX Hgate oxide thickness umTEXT: H GTEMP Htemperature at which parameters were measured CTEXT: H GVDD Hmeasurement bias range VTEXT: H GCGDO Hgate-drain overlap capacitance per meter channel width F/mTEXT: H GCGSO Hgate-source overlap capacitance per meter channel width F/mTEXT: H GCGBO Hgate-bulk overlap capacitance per meter channel length F/mTEXT: H GXPART Hgate-oxide capacitance charge model flag -TEXT: H GN0 Hzero-bias subthreshold slope coefficient - *TEXT: H GNB Hsens. of subthreshold slope to substrate bias - *TEXT: H GND Hsens. of subthreshold slope to drain bias - *TEXT: H GRSH Hdrain and source diffusion sheet resistance O_/[]TEXT: H GJS Hsource drain junction current density A/m2TEXT: H GPB Hbuilt in potential of source drain junction VTEXT: H GMJ HGrading coefficient of source drain junction -TEXT: H GPBSW Hbuilt in potential of source,drain juntion sidewall VTEXT: H GMJSW Hgrading coefficient of source drain junction sidewall -TEXT: H GCJ HSource drain junction capacitance per unit area F/m2TEXT: H GCJSW Hsource drain junction sidewall capacitance per unit length F/mTEXT: H GWDF Hsource drain junction default width mTEXT: H GDELL HSource drain junction length reduction mTEXT: HTEXT: TEXT: GXPART H= 0 selects a 40/60 drain/source charge partitionTEXT: H in saturation, while GXPART H= 1 selects a 0/100 drain/sourceTEXT: H charge partition.TEXT: HTEXT: SEEALSO: SPICE:mSUBJECT: rmodelTITLE: Resistor ModelsTEXT: TEXT: The resistor model consists of process-related deviceTEXT: H data that allow the resistance to be calculated fromTEXT: H geometric information and to be corrected for temperature.TEXT: H The parameters available are:TEXT: HTEXT: Gname Hparameter units default exampleTEXT: HTEXT: H GTC1 Hfirst order temperature coeff. O_/C 0.0 -TEXT: H GTC2 Hsecond order temperature coeff. O_/C2 0.0 -TEXT: H GRSH Hsheet resistance O_/[] - 50TEXT: H GDEFW Hdefault width meters 1e-6 2e-6TEXT: H GNARROW Hnarrowing due to side etching meters 0.0 1e-7TEXT: HTEXT: TEXT: The sheet resistance is used with the narrowing parame-TEXT: H ter and _L and _W from the resistor line to determine the nom-TEXT: H inal resistance by the formulaTEXT: HTEXT: R=RSHxW-NARROWTEXT: L-NARROW________TEXT: HTEXT: _D_E_F_W is used to supply a default value for _W if one is notTEXT: H specified on the device line. If either _R_S_H or _L is notTEXT: H specified, then the standard default resistance value of 1kTEXT: H O_ is used. After the nominal resistance is calculated, itTEXT: H is adjusted for temperature by the formula:TEXT: HTEXT: RES(temp)=RES(tnom)x(1+TC1x(temp-tnom)+TC2*(temp-tnom)2)TEXT: HTEXT: SEEALSO: SPICE:rSUBJECT: swmodelTITLE: Switch ModelsTEXT: TEXT: The switch model allows an almost ideal switch to beTEXT: H described in SPICE. The switch is not quite ideal, in thatTEXT: H the resistance can not change from 0 to infinity, but mustTEXT: H always have a finite positive value. By proper selection ofTEXT: H the on and off resistances, they can be effectively zero andTEXT: H infinity in comparison to other circuit elements. TheTEXT: H parameter⌨️ 快捷键说明
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