spice.txt

支持数字元件仿真的SPICE插件

TEXT:                HCUR stands for a transfer function of the type  (output
TEXT: H          voltage)/(input  current)  while  VOL  stands for a transfer
TEXT: H          function of the type (output voltage)/(input voltage).   POL
TEXT: H          stands  for  pole  analysis only, ZER for zero analysis only
TEXT: H          and PZ for both.  This feature is provided mainly because if
TEXT: H          there  is  a nonconvergence in finding poles or zeros, then,
TEXT: H          at least the other can be found.  Finally, NODE1  and  NODE2
TEXT: H          are the two input nodes and NODE3 and NODE4 are the two out-
TEXT: H          put nodes.  Thus, there is complete  freedom  regarding  the
TEXT: H          output and input ports and the type of transfer function.
TEXT: H
TEXT:                In interactive mode, the command  syntax  is  the  same
TEXT: H          except  that the first field is PZ instead of .PZ.  To print
TEXT: H          the results, one should use the command 'print all'.
TEXT: H
TEXT: 
SEEALSO: SPICE:pz

SUBJECT: pz
TITLE: pz
TEXT: 
TEXT:      Gpz H._p_z _c_a_r_d _o_p_t_i_o_n_s
TEXT: H          Run a pole-zero analysis.  See the SPICE3 User's Guide
TEXT: H          for details.  This command is only available in GspiceH.
TEXT: H
TEXT: 
SEEALSO: SPICE:pzanalysis

SUBJECT: setcirc
TITLE: setcirc
TEXT: 
TEXT:      Gsetcirc H[ _c_i_r_c_u_i_t_n_a_m_e ]
TEXT: H          Change the current circuit. The current circuit is the
TEXT: H          one that is used for the simulation commands.  When a
TEXT: H          circuit is loaded with the Gsource Hcommand, it becomes
TEXT: H          the current circuit.  If Gsetcirc His given no arguments,
TEXT: H          it prints a menu of the available circuits.
TEXT: H
TEXT: 

SUBJECT: ac
TITLE: ac
TEXT: 
TEXT:      Gac H._a_c _c_a_r_d _a_r_g_u_m_e_n_t_s
TEXT: H          Do an ac analysis of the current circuit.  See the
TEXT: H          SPICE3 User's Guide for details.  Only available in
TEXT: H          GspiceH.
TEXT: H
TEXT: 
SEEALSO: SPICE:acanalysis

SUBJECT: dc
TITLE: dc
TEXT: 
TEXT:      Gdc H._d_c _c_a_r_d _a_r_g_u_m_e_n_t_s
TEXT: H          Calculate the dc transfer curve of the current circuit.
TEXT: H          See the SPICE3 User's Guide for details.  Only avail-
TEXT: H          able in GspiceH.
TEXT: H
TEXT: 
SEEALSO: SPICE:dcanalysis

SUBJECT: subckts
TITLE: Subcircuits
TEXT: 
TEXT:                A subcircuit that consists of  SPICE  elements  can  be
TEXT: H          defined  and  referenced  in  a  fashion  similar  to device
TEXT: H          models.  The subcircuit is defined in the input  file  by  a
TEXT: H          grouping  of  element lines;  the program then automatically
TEXT: H          inserts the group of elements  wherever  the  subcircuit  is
TEXT: H          referenced.   There is no limit on the size or complexity of
TEXT: H          subcircuits, and subcircuits may contain other  subcircuits.
TEXT: H          An example of subcircuit usage is given in Appendix A.
TEXT: H
TEXT:           _1._1.  ._S_U_B_C_K_T _C_a_r_d
TEXT: H
TEXT:           GGeneral form:
TEXT: H
TEXT:                .SUBCKT H_s_u_b_n_a_m _N_1 <_N_2 _N_3 ...>
TEXT: H
TEXT:           GExamples:
TEXT: H
TEXT:                H.GSUBCKT HOPAMP 1 2 3 4
TEXT: H
TEXT: 
TEXT:                A circuit definition is  begun  with  a  G.SUBCKT  Hline.
TEXT: H          _S_U_B_N_A_M  is  the  subcircuit  name,  and  _N_1, _N_2, ... are the
TEXT: H          external nodes, which cannot be zero.  The group of  element
TEXT: H          lines  which  immediately follow the G.SUBCKT Hline define the
TEXT: H          subcircuit.  The last line in a subcircuit definition is the
TEXT: H          G.ENDS Hline (see below).  Control lines may not appear within
TEXT: H          a subcircuit definition;   however,  subcircuit  definitions
TEXT: H          may contain anything else, including other subcircuit defin-
TEXT: H          itions, device models, and  subcircuit  calls  (see  below).
TEXT: H          Note  that  any  device  models  or  subcircuit  definitions
TEXT: H          included as part of a  subcircuit  definition  are  strictly
TEXT: H          local  (i.e., such models and definitions are not known out-
TEXT: H          side the subcircuit definition).  Also,  any  element  nodes
TEXT: H          not  included  on  the G.SUBCKT Hline are strictly local, with
TEXT: H          the exception of 0 (ground) which is always global.
TEXT: H
TEXT:           _1._2.  ._E_N_D_S _C_a_r_d
TEXT: H
TEXT:           GGeneral form:
TEXT: H
TEXT:                .ENDS H<_S_U_B_N_A_M>
TEXT: H
TEXT:           GExamples:
TEXT: H
TEXT:                .ENDS HOPAMP
TEXT: H
TEXT: 
TEXT:                This line must be  the  last  one  for  any  subcircuit
TEXT: H          definition.   The  subcircuit  name,  if included, indicates
TEXT: H          which subcircuit definition is being terminated;   if  omit-
TEXT: H          ted, all subcircuits being defined are terminated.  The name
TEXT: H          is needed only when nested subcircuit definitions are  being
TEXT: H          made.
TEXT: H
TEXT: 
TEXT:           _1._3.  _S_u_b_c_i_r_c_u_i_t _C_a_l_l_s
TEXT: H
TEXT:           GGeneral form:
TEXT: H
TEXT:               XH_X_Y_Y_Y_Y_Y_Y_Y _N_1 <_N_2 _N_3 ...> _S_U_B_N_A_M
TEXT: H
TEXT:           GExamples:
TEXT: H
TEXT:               XH1 2 4 17 3 1 MULTI
TEXT: H
TEXT: 
TEXT:                Subcircuits are used in  SPICE  by  specifying  pseudo-
TEXT: H          elements beginning with the letter `X', followed by the cir-
TEXT: H          cuit nodes to be used in expanding the subcircuit.
TEXT: H
TEXT:                Note that when a circuit is  parsed,  all  devices  and
TEXT: H          local     nodes    in    subcircuits    are    renamed    as
TEXT: H          _d_e_v_i_c_e_t_y_p_eG:H_s_u_b_c_k_t_n_a_m_eG:H_d_e_v_i_c_e_n_a_m_e.      Nested     subcircuit
TEXT: H          instances  will  have  multiple  colon-seperated qualifiers.
TEXT: H          GNutmeg Hwill also accept  subcircuit  names  with  components
TEXT: H          seperated by periods, so long as the names do not clash with
TEXT: H          names specifiable as _p_l_o_t_n_a_m_eG.H_v_a_l_u_e.
TEXT: H
TEXT: 

SUBJECT: titlecard
TITLE: Title Line
TEXT: 
TEXT:                This line must be the first line in the input file.  It
TEXT: H          is printed at the top of each page of output.
TEXT: H
TEXT:           GExamples:
TEXT: H
TEXT:               HPOWER AMPLIFIER CIRCUIT
TEXT: H              TEST OF CAM CELL
TEXT: H
TEXT: 

SUBJECT: models
TITLE: Device Models
TEXT: 
TEXT:           GGeneral form:
TEXT: H
TEXT:                .MODEL H_M_N_A_M_E _T_Y_P_E(_P_N_A_M_E_1=_P_V_A_L_1 _P_N_A_M_E_2=_P_V_A_L_2 ... )
TEXT: H
TEXT:           GExamples:
TEXT: H
TEXT:                .MODEL HMOD1 NPN (BF=50 IS=1E-13 VBF=50)
TEXT: H
TEXT: 
TEXT:                The G.MODEL Hline specifies a  set  of  model  parameters
TEXT: H          that  will  be  used  by  one or more devices.  _M_N_A_M_E is the
TEXT: H          model name, and type is one of the following ten types:
TEXT: H
TEXT:                       GR      Hresistor model
TEXT: H                      GC      Hcapacitor model
TEXT: H                      GURC    HUniform Distributed RC model
TEXT: H                      GD      Hdiode model
TEXT: H                      GNPN    HNPN BJT model
TEXT: H                      GPNP    HPNP BJT model
TEXT: H                      GNJF    HN-channel JFET model
TEXT: H                      GPJF    HP-channel JFET model
TEXT: H                      GNMOS   HN-channel MOSFET model
TEXT: H                      GPMOS   HP-channel MOSFET model
TEXT: H                      GNMF    HN-channel MESFET model
TEXT: H                      GPMF    HP-channel MESFET model
TEXT: H                      GSW     Hvoltage controlled switch
TEXT: H                      GCSW    Hcurrent controlled switch
TEXT: H
TEXT: 
TEXT:                Parameter values are defined by appending the parameter
TEXT: H          name,  as  given  below  for each model type, followed by an
TEXT: H          equal sign and the parameter value.  Model  parameters  that
TEXT: H          are  not given a value are assigned the default values given
TEXT: H          below for each model type.
TEXT: H
TEXT: 
SUBTOPIC: SPICE:bjt SPICE:c SPICE:d
SUBTOPIC: SPICE:jfet SPICE:mesfet SPICE:mosfet
SUBTOPIC: SPICE:rmodel SPICE:swmodel SPICE:urc


SUBJECT: bjt
TITLE: BJT Models
TEXT: 
TEXT:                The bipolar junction transistor model in  SPICE  is  an
TEXT: H          adaptation  of  the  integral charge control model of Gummel
TEXT: H          and Poon.  This modified Gummel-Poon model extends the  ori-
TEXT: H          ginal  model to include several effects at high bias levels.
TEXT: H          The model will automatically simplify to the simpler  Ebers-
TEXT: H          Moll  model  when  certain parameters are not specified. The
TEXT: H          parameter names used in the modified Gummel-Poon model  have
TEXT: H          been  chosen  to  be  more  easily understood by the program
TEXT: H          user, and to reflect better both physical and circuit design
TEXT: H          thinking.
TEXT: H
TEXT:                The dc model is defined by the parameters GIS,  BF,  NF,
TEXT: H          ISE,  IKFH,  and  GNE Hwhich determine the forward current gain
TEXT: H          characteristics, GIS, BR, NR, ISC, IKRH, and GNC  Hwhich  deter-
TEXT: H          mine  the  reverse current gain characteristics, and GVAF Hand
TEXT: H          GVAR Hwhich determine the output conductance for  forward  and
TEXT: H          reverse regions.  Three ohmic resistances GRB, RCH, and GRE Hare
TEXT: H          included, where GRB Hcan  be  high  current  dependent.   Base
TEXT: H          charge  storage  is  modeled  by forward and reverse transit
TEXT: H          times, GTF Hand GTRH, the forward transit  time  TF  being  bias
TEXT: H          dependent  if desired, and nonlinear depletion layer capaci-
TEXT: H          tances which are determined by GCJE, VJEH, and GMJE Hfor the B-E
TEXT: H          junction  ,  GCJC, VJCH, and GMJC Hfor the B-C junction and GCJS,
TEXT: H          VJSH, and GMJS Hfor  the  C-S  (Collector-Substrate)  junction.
TEXT: H          The temperature dependence of the saturation current, GISH, is
TEXT: H          determined by the energy-gap, GEGH, and the saturation current
TEXT: H          temperature  exponent,  GXTIH.  Additionally base current tem-
TEXT: H          perature dependence  is  modeled  by  the  beta  temperature
TEXT: H          exponent GXTB Hin the new model.
TEXT: H
TEXT:                The  BJT parameters used in  the  modified  Gummel-Poon
TEXT: H          model  are listed below. The parameter names used in earlier
TEXT: H          versions of SPICE2 are still accepted.