p8-17.sp

《CMOS电路模拟与设计——基于Hspice》——电路设计与仿真,钟文耀, 郑美珠,科学出版社

*EXERCISE8_8  NMOS-nonsaturation regsion
.options post=2 list
M1  1  2  0  0  MN  L=2u W=4u
VDS 1  0  DC=50mV
VGS 2  0  DC=1V
.MODEL MN NMOS (LEVEL=2 LD=0.250U TOX=365E-10
+ NSUB=2.13818E+16 VTO=0.84898 KP=5.7790E-05
+ GAMMA=0.8905 PHI=0.6 U0=610.8 UEXP=0.244555
+ UCRIT=128615 DELTA=2.0298 VMAX=92227.9 XJ=0.250U
+ LAMBDA=1.956049E-02 NFS=2.307838E+12 NEFF=1
+ NSS=1.0E+12 TPG=1.0 RSH=22.730 CGDO=3.54775E-10
+ CGSO=3.54775E-10 CGBO=6.354506E-10 CJ=3.7740E-04
+ MJ=0.45890 CJSW=5.1360E-10 MJSW=0.36620 PB=0.800)
.DC  VGS  0   5   0.1
.print  I(M1)
.plot  I(M1)
.END