📄 memcfg.s
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;**************************************************************************
;NAME: MEMCFG.s
;copyright:wzz at Qingdao University 2008
;**************************************************************************
;Address define
;**************************************************************************
aBWSCON EQU 0x01C80000
aBANKCON0 EQU 0x01C80004
aBANKCON1 EQU 0x01C80008
aBANKCON2 EQU 0x01C8000C
aBANKCON3 EQU 0x01C80010
aBANKCON4 EQU 0x01C80014
aBANKCON5 EQU 0x01C80018
aBANKCON6 EQU 0x01C8001C
aBANKCON7 EQU 0x01C80020
aREFRESH EQU 0x01C80024
aBANKSIZE EQU 0x01C80028
aMRSRB6 EQU 0x01C8002C
aMRSRB7 EQU 0x01C80030
;**************************************************************************
;============================================================
;BWSCON
;ST7 WS7 DW7 ST6 WS6 DW6...ST1 WS1 DW1 DW0 ENDIAN
;ST
;This bit determines SRAM for using UB/LB for bank X:
;0 = Not using UB/LB ( Pin[14:11] is dedicated nWBE[3:0] )
;1 = Using UB/LB ( Pin[14:11] is dedicated nBE[3:0] )
;WS
;This bit determines WAIT status for bank X:
;0 = WAIT disable, 1 = WAIT enable
;DW
;These two bits determine data bus width for bank X:
;00 = 8-bit 01 = 16-bit, 10 = 32-bit
cBWSCON16 EQU 0x01000002 ;Bank0=16bit flash
; ||||||--
; |||||---
; ||||----
; |||-----
; ||------
; |------- ;Bank6=16bit SDRAM 0x1
; --------
;**********MEMORY CONTROL PARAMETERS*******************************
;When MCLK=66MHz,1clk=0.0152us=15.2ns
;============================================================
;nGCS0-nGCS5
;Tacs [14:13] Address set-up before nGCSn
;Tcos [12:11] Chip selection set-up nOE
;Tacc [10:8] Access cycle
;Toch [7:6] Chip selection hold on nOE
;Tcah [5:4] Address holding time after nGCSn
;Tpac [3:2] Page mode access cycle @ Page mode
;PMC [1:0] Page mode configuration
;BANK0
B0_Tacs EQU 0x0;1clk
B0_Tcos EQU 0x0;1clk
B0_Tacc EQU 0x7;14clk
B0_Toch EQU 0x0;1clk
B0_Tcah EQU 0x0;1clk
B0_Tpac EQU 0x0;1clk
B0_PMC EQU 0x0;normal
;============================================================
;BANK6&7
;MT [16:15] These two bits determines the memmory type
;Memory Type=Rom or SRAM MT=00
;Tacs [14:13] Address set-up before nGCSn
;Tcos [12:11] Chip selection set-up nOE
;Tacc [10:8] Access cycle
;Toch [7:6] Chip selection hold on nOE
;Tcah [5:4] Address holding time after nGCSn
;Tpac [3:2] Page mode access cycle @ Page mode
;PMC [1:0] Page mode configuration
;Memory Type=FP DRAM MT=01
;EDO DRAM [MT=10]
;Trcd [5:4] RAS to CAS delay
;Tcas [3] CAS pulse width
;Tcp [2] CAS pre-charge
;CAN [1:0] Column address number
;
;Bank 6(if SROM) parameter
B6_Tacs EQU 0x3 ;4clk
B6_Tcos EQU 0x3 ;4clk
B6_Tacc EQU 0x7 ;14clk
B6_Tcoh EQU 0x3 ;4clk
B6_Tah EQU 0x3 ;4clk
B6_Tacp EQU 0x3 ;6clk
B6_PMC EQU 0x0 ;normal(1data)
;Bank 7(if SROM) parameter
B7_Tacs EQU 0x3 ;4clk
B7_Tcos EQU 0x3 ;4clk
B7_Tacc EQU 0x7 ;14clk
B7_Tcoh EQU 0x3 ;4clk
B7_Tah EQU 0x3 ;4clk
B7_Tacp EQU 0x3 ;6clk
B7_PMC EQU 0x0 ;normal(1data)
;Bank 6 (if SDRAM) parameter
B6_MT EQU 0x3 ;SDRAM
B6_Trcd EQU 0x0 ;2clk
B6_SCAN EQU 0x0 ;8bit
B6_WBL EQU 0x0
B6_TM EQU 0x0
B6_CL EQU 0x2
B6_BT EQU 0x0
B6_BL EQU 0x0
;Bank 7 (if SDRAM) parameter
B7_MT EQU 0x3 ;SDRAM
B7_Trcd EQU 0x0 ;2clk
B7_SCAN EQU 0x0 ;8bit
B7_WBL EQU 0x0
B7_TM EQU 0x0
B7_CL EQU 0x2
B7_BT EQU 0x0
B7_BL EQU 0x0
;============================================================
;REFRESH CONTROL REGISTER
;REFEN [23] DRAM/SDRAM Refresh Enable
;TREFMD [22] DRAM/SDRAM Refresh Mode
;REFRESH parameter
REFEN EQU 0x1 ;Refresh enable
TREFMD EQU 0x0 ;CBR(CAS before RAS)/Auto refresh
Trp EQU 0x0 ;2clk
Trc EQU 0x0 ;4clk//
Tchr EQU 0x2 ;3clk
REFCNT EQU 1425 ;1019 ;period=15.6us, MCLK=60Mhz
;
;============================================================
;BANKSIZE register
SCLKEN EQU 0x1;
BK76MAP EQU 0x6;8M
;************************************************
END
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