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📄 sc520_asm.s.svn-base

📁 u-boot for S3c2443 processor
💻 SVN-BASE
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/* * (C) Copyright 2002 * Daniel Engstr鰉, Omicron Ceti AB <daniel@omicron.se>. * * See file CREDITS for list of people who contributed to this * project. * * This program is free software; you can redistribute it and/or * modify it under the terms of the GNU General Public License as * published by the Free Software Foundation; either version 2 of * the License, or (at your option) any later version. * * This program is distributed in the hope that it will be useful, * but WITHOUT ANY WARRANTY; without even the implied warranty of * MERCHANTABILITY or FITNESS FOR A PARTICULAR PURPOSE.  See the * GNU General Public License for more details. * * You should have received a copy of the GNU General Public License * along with this program; if not, write to the Free Software * Foundation, Inc., 59 Temple Place, Suite 330, Boston, * MA 02111-1307 USA *//* This file is largely based on code obtned from AMD. AMD's original * copyright is included below *//* *  ============================================================================= * *   Copyright 1999 Advanced Micro Devices, Inc. * *  This software is the property of Advanced Micro Devices, Inc  (AMD)  which *  specifically grants the user the right to modify, use and distribute this *  software provided this COPYRIGHT NOTICE is not removed or altered.  All *  other rights are reserved by AMD. * *  THE MATERIALS ARE PROVIDED "AS IS" WITHOUT ANY EXPRESS OR IMPLIED WARRANTY *  OF ANY KIND INCLUDING WARRANTIES OF MERCHANTABILITY, NONINFRINGEMENT OF *  THIRD-PARTY INTELLECTUAL PROPERTY, OR FITNESS FOR ANY PARTICULAR PURPOSE. *  IN NO EVENT SHALL AMD OR ITS SUPPLIERS BE LIABLE FOR ANY DAMAGES WHATSOEVER *  (INCLUDING, WITHOUT LIMITATION, DAMAGES FOR LOSS OF PROFITS, BUSINESS *  INTERRUPTION, LOSS OF INFORMAITON) ARISING OUT OF THE USE OF OR INABILITY *  TO USE THE MATERIALS, EVEN IF AMD HAS BEEN ADVISED OF THE POSSIBILITY OF *  SUCH DAMAGES.  BECAUSE SOME JURSIDICTIONS PROHIBIT THE EXCLUSION OR *  LIMITATION OF LIABILITY FOR CONSEQUENTIAL OR INCIDENTAL DAMAGES, THE ABOVE *  LIMITATION MAY NOT APPLY TO YOU. * *  AMD does not assume any responsibility for any errors that may appear in *  the Materials nor any responsibility to support or update the Materials. *  AMD retains the right to make changes to its test specifications at any *  time, without notice. * *  So that all may benefit from your experience, please report  any  problems *  or suggestions about this software back to AMD.  Please include your name, *  company,  telephone number,  AMD product requiring support and question or *  problem encountered. * *  Advanced Micro Devices, Inc.         Worldwide support and contact *  Embedded Processor Division            information available at: *  Systems Engineering                       epd.support@amd.com *  5204 E. Ben White Blvd.                          -or- *  Austin, TX 78741                http://www.amd.com/html/support/techsup.html *  ============================================================================ *//******************************************************************************* *	 AUTHOR      : Buddy Fey - Original. ******************************************************************************* *//******************************************************************************* *       FUNCTIONAL DESCRIPTION: * This routine is called to autodetect the geometry of the DRAM. * * This routine is called to determine the number of column bits for the DRAM * devices in this external bank. This routine assumes that the external bank * has been configured for an 11-bit column and for 4 internal banks. This gives * us the maximum address reach in memory. By writing a test value to the max * address and locating where it aliases to, we can determine the number of valid * column bits. * * This routine is called to determine the number of internal banks each DRAM * device has. The external bank (under test) is configured for maximum reach * with 11-bit columns and 4 internal banks. This routine will write to a max * address (BA1 and BA0 = 1) and then read from an address with BA1=0 to see if * that column is a "don't care". If BA1 does not affect write/read of data, * then this device has only 2 internal banks. * * This routine is called to determine the ending address for this external * bank of SDRAM. We write to a max address with a data value and then disable * row address bits looking for "don't care" locations. Each "don't care" bit * represents a dividing of the maximum density (128M) by 2. By dividing the * maximum of 32 4M chunks in an external bank down by all the "don't care" bits * determined during sizing, we set the proper density. * * WARNINGS. * bp must be preserved because it is used for return linkage. * * EXIT * nothing returned - but the memory subsystem is enabled ******************************************************************************* */#include <config.h>#ifdef CONFIG_SC520.section .text.equ            DRCCTL,     0x0fffef010   /* DRAM control register */.equ            DRCTMCTL,   0x0fffef012   /* DRAM timing control register */.equ            DRCCFG,     0x0fffef014   /* DRAM bank configuration register */.equ            DRCBENDADR, 0x0fffef018   /* DRAM bank ending address register */.equ            ECCCTL,     0x0fffef020   /* DRAM ECC control register */.equ            DBCTL,      0x0fffef040   /* DRAM buffer control register */.equ            CACHELINESZ, 0x00000010   /* size of our cache line (read buffer) */.equ            COL11_ADR,  0x0e001e00    /* 11 col addrs */.equ            COL10_ADR,  0x0e000e00    /* 10 col addrs */.equ            COL09_ADR,  0x0e000600    /*  9 col addrs */.equ            COL08_ADR,  0x0e000200    /*  8 col addrs */.equ            ROW14_ADR,  0x0f000000    /* 14 row addrs */.equ            ROW13_ADR,  0x07000000    /* 13 row addrs */.equ            ROW12_ADR,  0x03000000    /* 12 row addrs */.equ            ROW11_ADR,  0x01000000    /* 11 row addrs/also bank switch */.equ            ROW10_ADR,  0x00000000    /* 10 row addrs/also bank switch */.equ            COL11_DATA, 0x0b0b0b0b    /* 11 col addrs */.equ            COL10_DATA, 0x0a0a0a0a    /* 10 col data */.equ            COL09_DATA, 0x09090909    /*  9 col data */.equ            COL08_DATA, 0x08080808    /*  8 col data */.equ            ROW14_DATA, 0x3f3f3f3f    /* 14 row data (MASK) */.equ            ROW13_DATA, 0x1f1f1f1f    /* 13 row data (MASK) */.equ            ROW12_DATA, 0x0f0f0f0f    /* 12 row data (MASK) */.equ            ROW11_DATA, 0x07070707    /* 11 row data/also bank switch (MASK) */.equ            ROW10_DATA, 0xaaaaaaaa    /* 10 row data/also bank switch (MASK) */ /*  * initialize dram controller registers  */.globl mem_initmem_init:	xorw    %ax,%ax	movl    $DBCTL, %edi	movb     %al, (%edi)             /* disable write buffer */	movl    $ECCCTL, %edi	movb     %al, (%edi)             /* disable ECC */	movl    $DRCTMCTL, %edi	movb    $0x1E,%al                /* Set SDRAM timing for slowest */	movb     %al, (%edi) /*  * setup loop to do 4 external banks starting with bank 3  */	movl    $0xff000000,%eax         /* enable last bank and setup */	movl    $DRCBENDADR, %edi        /* ending address register */	movl     %eax, (%edi)	movl    $DRCCFG, %edi            /* setup */	movw    $0xbbbb,%ax              /* dram config register for  */	movw    %ax, (%edi) /*  * issue a NOP to all DRAMs  */	movl    $DRCCTL, %edi            /* setup DRAM control register with */	movb    $0x1,%al                 /* Disable refresh,disable write buffer */	movb     %al, (%edi)	movl    $CACHELINESZ, %esi       /* just a dummy address to write for */	movw     %ax, (%esi) /*  * delay for 100 usec? 200?  * ******this is a cludge for now *************  */	movw    $100,%cxsizdelay:	loop    sizdelay                 /* we need 100 usec here */ /***********************************************/ /*  * issue all banks precharge  */	movb    $0x2,%al                 /* All banks precharge */	movb     %al, (%edi)	movw     %ax, (%esi) /*  * issue 2 auto refreshes to all banks  */	movb    $0x4,%al                 /* Auto refresh cmd */	movb     %al, (%edi)	movw    $2,%cxrefresh1:	movw     %ax, (%esi)	loop    refresh1 /*  * issue LOAD MODE REGISTER command  */	movb    $0x3,%al                 /* Load mode register cmd */	movb     %al, (%edi)	movw     %ax, (%esi) /*  * issue 8 more auto refreshes to all banks  */	movb    $0x4,%al                 /* Auto refresh cmd */	movb     %al, (%edi)	movw    $8,%cxrefresh2:	movw     %ax, (%esi)	loop    refresh2 /*  * set control register to NORMAL mode  */	movb    $0x0,%al                 /* Normal mode value */	movb     %al, (%edi) /*  * size dram starting with external bank 3 moving to external bank 0  */	movl    $0x3,%ecx                /* start with external bank 3 */nextbank: /*  * write col 11 wrap adr  */	movl    $COL11_ADR, %esi         /* set address to max col (11) wrap addr */	movl    $COL11_DATA, %eax        /* pattern for max supported columns(11) */	movl    %eax, (%esi)             /* write max col pattern at max col adr */	movl    (%esi), %ebx             /* optional read */	cmpl    %ebx,%eax                /* to verify write */	jnz     bad_ram                  /* this ram is bad */ /*  * write col 10 wrap adr  */	movl    $COL10_ADR, %esi         /* set address to 10 col wrap address */	movl    $COL10_DATA, %eax        /* pattern for 10 col wrap */	movl    %eax, (%esi)             /* write 10 col pattern @ 10 col wrap adr */	movl    (%esi), %ebx             /* optional read */	cmpl    %ebx,%eax                /* to verify write */	jnz     bad_ram                  /* this ram is bad */ /*  * write col 9 wrap adr  */	movl    $COL09_ADR, %esi         /* set address to 9 col wrap address */	movl    $COL09_DATA, %eax        /* pattern for 9 col wrap */	movl    %eax, (%esi)             /* write 9 col pattern @ 9 col wrap adr */	movl    (%esi), %ebx             /* optional read */	cmpl    %ebx,%eax                /* to verify write */	jnz     bad_ram                  /* this ram is bad */ /*  * write col 8 wrap adr  */	movl    $COL08_ADR, %esi         /* set address to min(8) col wrap address */	movl    $COL08_DATA, %eax        /* pattern for min (8) col wrap */	movl    %eax, (%esi)             /* write min col pattern @ min col adr */	movl    (%esi), %ebx             /* optional read */	cmpl    %ebx,%eax                /* to verify write */	jnz     bad_ram                  /* this ram is bad */ /*  * write row 14 wrap adr  */

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