main_t2fnn_and_fnn_with_noise_final.m

利用T2FNN進行MEC建模,針對IC散射現象進行量測與模擬比較

clear all
clc
close all

me_pcb=csvread('me_pcb.csv');
[totel qqq]=size(me_pcb);

m_t1=[-1 -0.8
       0    0
       1  0.8];

sigmat2=[0.6 0.5
         0.6 0.5
         0.6 0.5];
rate=0.5;     
     
mt2_1=m_t1-rate*sigmat2;
mt2_2=m_t1+rate*sigmat2;


ratew=0.5;
A=rand(3,2,totel);

wt2(:,1,:)=ratew*(A(:,1,:)-A(:,2,:));
wt2(:,2,:)=ratew*(A(:,1,:)+A(:,2,:));
   
 x=[0.5 -0.4]; 
 r=me_pcb(:,2)';
 
 afasigma=0.1;
 afam=0.1;
 afaw=0.5;

 t=me_pcb(:,1);
 learning=10;
 
 snr=20;
 
 [y_t2,mt2_1,mt2_2,wt2,sigmat2,error]=fun_T2FNN_noise_EMC(x,mt2_1,mt2_2,sigmat2,wt2,afaw,afasigma,afam,learning,totel,t,r,snr)
 


m=[-1   0   1
   -0.8 0   0.8];

sigma=[0.6 0.6 0.6
       0.5 0.5 0.5];
for hk=1:1:totel
 w4(hk,:)=(wt2(:,1,hk)+wt2(:,2,hk))/2 
end
  
 %w4=0.5.*randn(totel,3); 
 
 afaw4=0.5;
 afam=0.1;
 afasig=0.1;
 
learning=10; 
 r=me_pcb(:,2)';
 t=me_pcb(:,1);
 snr=20;
 
 [FNN_out,m,sigma,w4,error]=Fun_FNN_noise_EMC(x,m,sigma,w4,afaw4,afam,afasig,learning,r,totel,t,snr);