📄 nand_parameters.vh
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`ifdef V33
`ifdef x8 parameter tRC_min = 30; // read cycle time parameter tRP_min = 15; // RE# pulse width parameter tWC_min = 30; // write cycle time parameter tWP_min = 15; // WE# pulse width parameter tCEA_max = 23; // CE# access time parameter tCLS_min = 10; // CLE setup time parameter tCLH_min = 5; // CLE hold time parameter tCS_min = 15; // CE# setup time parameter tCH_min = 5; // CE# hold time parameter tDS_min = 10; // Data setup time parameter tDH_min = 5; // Data hold time parameter tALS_min = 10; // ALE setup time parameter tALH_min = 5; // ALE hold time parameter tREA_max = 18; // RE# access time parameter tREH_min = 10; // RE# HIGH hold time parameter tWH_min = 10; // WE# pulse width HIGH parameter tWHR_min = 60; // WE# HIGH to RE# LOW `else // Timing Parameters for 3.3Volt x16 and 1.8Volt NAND parts parameter tRC_min = 50; // read cycle time parameter tRP_min = 25; // RE# pulse width parameter tWC_min = 45; // write cycle time parameter tWP_min = 25; // WE# pulse width parameter tCEA_max = 45; // CE# access time parameter tCLS_min = 25; // CLE setup time parameter tCLH_min = 10; // CLE hold time parameter tCS_min = 35; // CE# setup time parameter tCH_min = 10; // CE# hold time parameter tDS_min = 20; // Data setup time parameter tDH_min = 10; // Data hold time parameter tALS_min = 25; // ALE setup time parameter tALH_min = 10; // ALE hold time parameter tREA_max = 30; // RE# access time parameter tREH_min = 15; // RE# HIGH hold time parameter tWH_min = 15; // WE# pulse width HIGH parameter tWHR_min = 80; // WE# HIGH to RE# LOW `endif
`else
parameter tRC_min = 50; // read cycle time parameter tRP_min = 25; // RE# pulse width parameter tWC_min = 45; // write cycle time parameter tWP_min = 25; // WE# pulse width parameter tCEA_max = 45; // CE# access time parameter tCLS_min = 25; // CLE setup time parameter tCLH_min = 10; // CLE hold time parameter tCS_min = 35; // CE# setup time parameter tCH_min = 10; // CE# hold time parameter tDS_min = 20; // Data setup time parameter tDH_min = 10; // Data hold time parameter tALS_min = 25; // ALE setup time parameter tALH_min = 10; // ALE hold time parameter tREA_max = 30; // RE# access time parameter tREH_min = 15; // RE# HIGH hold time parameter tWH_min = 15; // WE# pulse width HIGH parameter tWHR_min = 80; // WE# HIGH to RE# LOW`endif
// cache mode ops have special timing
parameter tWC_cache_min = 45; // write cycle timeparameter tWP_cache_min = 25; // WE# pulse widthparameter tWH_cache_min = 15; // WE# pulse width HIGHparameter tCLS_cache_min = 25; // CLE setup timeparameter tCLH_cache_min = 10; // CLE hold timeparameter tCS_cache_min = 35; // CE# setup timeparameter tCH_cache_min = 10; // CE# hold timeparameter tDS_cache_min = 20; // Data setup timeparameter tDH_cache_min = 10; // Data hold timeparameter tALS_cache_min = 25; // ALE setup timeparameter tALH_cache_min = 10; // ALE hold timeparameter tCEA_cache_max = 45; // CE# access timeparameter tIR_cache_min = 0; // Output High-Z to RE# LOWparameter tRC_cache_min = 50; // read cycle timeparameter tREA_cache_max = 30; // RE# access timeparameter tREH_cache_min = 15; // RE# HIGH hold timeparameter tRP_cache_min = 25; // RE# pulse widthparameter tWHR_cache_min = 80; // WE# HIGH to RE# LOWparameter tWW_cache_min = 30; // WP# setup time// parameters for all devicesparameter tBERS_min = 2000000; // BLOCK ERASE operation timeparameter tBERS_max = 3000000; // BLOCK ERASE operation timeparameter tCBSY_min = 3000; // Busy time for PROGRAM CACHE operationparameter tCBSY_max = 700000; // Busy time for PROGRAM CACHE operationparameter tPROG_typ = 300000; // Busy time for PAGE PROGRAM operationparameter tPROG_max = 700000; // Busy time for PAGE PROGRAM operationparameter NPP = 8; // Number of partial page programsparameter tLPROG_cache_typ = tPROG_typ; // Prog Page Cache Last Pageparameter tCLR_min = 10; // CLR to RE# delayparameter tIR_min = 0; // Output High-Z to RE# LOWparameter tWW_min = 30; // WP# setup timeparameter tADL_min = 100; // ALE to data startparameter tCHZ_max = 20; // CE# HIGH to output High-Zparameter tCHZ_cache_max = 45; // CE# HIGH to output High-Zparameter tDCBSYR1_min = 0; // Cache busy in page read cache mode (first 31h)parameter tDCBSYR1_max = 3000; // Cache busy in page read cache mode (first 31h)parameter tDCBSYR2_min = 3000; // Cache busy in page read cache mode (next 31h and 3Fh)parameter tDCBSYR2_max = 25000; // Cache busy in page read cache mode (next 31h and 3Fh)parameter tAR_min = 10; // ALE to RE# delayparameter tRHZ_max = 30; // RE# HIGH to output High-Zparameter tRR_min = 20; // Ready to RE# LOWparameter tRST_read = 5000; // RESET time issued during READparameter tRST_prog = 10000; // RESET time issued during PROGRAMparameter tRST_erase = 500000; // RESET time issued during ERASEparameter tRST_powerup = 5000; // RESET time issued after power-upparameter tRST_ready = 5000; // RESET time issued during idleparameter tOH_min = 15; // CE# HIGH to output holdparameter tR_max = 25000; // Data transfer from Flash array to data registerparameter tWB_max = 150; // WE# HIGH to busyparameter tOBSY_min = 25000; // Busy time for OTP DATA PROGRAM if OTP is protected
// unused timing parameters for this device
parameter tDBSY_min = 0; // Busy time for TWO-PLANE PROGRAM PAGE operationparameter tDBSY_max = 0; // Busy time for TWO-PLANE PROGRAM PAGE operationparameter tLBSY_min = 0; // Busy time for PROGRAM/ERASE on locked blockparameter tLBSY_max = 0; // Busy time for PROGRAM/ERASE on locked blockparameter tOBSY_max = 0; // Busy time for OTP DATA PROGRAM if OTP is protectedparameter tRHW_min = 0; // RE# HIGH to WE# LOWparameter tRHOH_min = tOH_min; // RE# HIGH to output holdparameter tCOH_min = tOH_min; // CE# HIGH to output holdparameter tRLOH_min = 0; // RE# LOW to output holdparameter tRLOH_cache_min = 0; // RE# LOW to output holdparameter tFEAT = 0; // Busy time for SET FEATURES and GET FEATURES operations //programmable drivestrength timing parameters
parameter tCLHIO_min = 0; // Programmable I/O CLE hold timeparameter tCLSIO_min = 0; // Programmable I/O CLE setup timeparameter tDHIO_min = 0; // Programmable I/O data hold timeparameter tDSIO_min = 0; // Programmable I/O data setup timeparameter tREAIO_max = 0; // Programmable I/O RE# access timeparameter tRPIO_min = 0; // Programmable I/O RE# pulse widthparameter tWCIO_min = 0; // Programmable I/O write cycle timeparameter tWHIO_min = 0; // Programmable I/O pulse width highparameter tWHRIO_min = 0; // Programmable I/O WE# high to RE# lowparameter tWPIO_min = 0; // Programmable I/O WE# pulse width//not all device datasheets define this parameter
parameter tCCS_min = 0; //Column Change Setup: not in datasheetparameter tCCS_cache_min = 0; //Column Change Setup: not in datasheet
//Device memory array configuration parameters
parameter NUM_OTP_ROW = 10; // Number of OTP pages (valid OTP address between 2h and Bh)⌨️ 快捷键说明
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