p7-24.sp

HSPICE程序和仿真。可以直接在HSPICE里面RUN.

*EX7-1 mont1.sp EXERCISE7_1  MONTE CARLO ANALYSIS FOR CMOS NOR GATE *
.options post=2 list 
*
.param  vdd=4.5 tox=385e-10
.temp   -25     
*
M1     5      2      1      1      MP     L=2u    W=8u
M2     4      3      5      5      MP     L=2u    W=8u
M3     4      2      0      0      MN     L=2u    W=4u
M4     4      3      0      0      MN     L=2u    W=4u
*
VDD    1      0      vdd
VINA   2      0      0
VINB   3      0      pwl(0  0      10n    0       12n    vdd
+                    30n    vdd    32n    0)
CL     4      0      0.1pF
*
.meas  tran   tplh   trig   par('V(3)-0.5*vdd')   Val=0  fall=1
+                    targ   par('V(4)-0.5*vdd')   Val=0  rise=1
.meas  tran   tphl   trig   par('V(3)-0.5*vdd')   Val=0  rise=1
+                    targ   par('V(4)-0.5*vdd')   Val=0  fall=1
.meas  tran   tpd    param=('(tplh+tphl)/2')
*
*  
.MODEL MP PMOS (level=2 LD=0.250U TOX=tox
+ NSUB=6.193910E+15 VTO=-0.826989 KP=2.2870E-05
+ GAMMA=0.4793 PHI=0.6 U0=241.796 UEXP=0.214214
+ UCRIT=19100.4 DELTA=0.859687 VMAX=47972.9 XJ=0.250U
+ LAMBDA=5.403347E-02 NFS=2.351269E+11 NEFF=1.001
+ NSS=1.0E+12 TPG=-1.0 RSH=76.020 CGDO=3.54775E-10
+ CGSO=3.54775E-10 CGBO=6.981174E-10 CJ=2.2624E-04
+ MJ=0.46650 CJSW=2.3825E-10 MJSW=0.24660 PB=0.700)
.MODEL MN NMOS (LEVEL=2 LD=0.250U TOX=tox
+ NSUB=2.13818E+16 VTO=0.84898 KP=5.7790E-05
+ GAMMA=0.8905 PHI=0.6 U0=610.8 UEXP=0.244555
+ UCRIT=128615 DELTA=2.0298 VMAX=92227.9 XJ=0.250U
+ LAMBDA=1.956049E-02 NFS=2.307838E+12 NEFF=1
+ NSS=1.0E+12 TPG=1.0 RSH=22.730 CGDO=3.54775E-10
+ CGSO=3.54775E-10 CGBO=6.354506E-10 CJ=3.7740E-04
+ MJ=0.45890 CJSW=5.1360E-10 MJSW=0.36620 PB=0.800)
*
.TRAN  1n   80n sweep   data=datnm
*
.data   datnm
*
vdd     tox     
4.0     385e-10 $min. vdd & max. gate oxide thickness
5.0     365e-10 $typical vdd & nominal gate oxide thickness
6.0     345e-10 $max. vdd & min. gate oxide thickness
.enddata
*
.alter
.temp   25
.alter
.temp   125
.probe v(2) v(3) v(4)
.END