📄 p7-31.lis
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******Star-HSPICE -- 2001.4.2 (20020307) 21:05:57 09/09/2007 pcnt
Copyright (C) 1985-2001 by Avant! Corporation.
Unpublished-rights reserved under US copyright laws.
This program is protected by law and is subject to the
terms and conditions of the license agreement found in:
d:\avanti\Hspice2001.4.2\license.txt
Use of this program is your acceptance to be bound by this
license agreement. Star-HSPICE is the trademark of
Avant! Corporation.
Input File: g:\major070710\ic\cmos电路模拟与设计——基于hispice\0510601-ch7\p7
lic:
lic: FLEXlm:v7.2 USER:xwl HOSTNAME:b976c20a83914bf HOSTID: PID:3916
lic: Using FLEXlm license file:
lic: D:\avanti\LICENSE.DAT
lic: Checkout hspicewin; Encryption code: BC5DE003CC9EDC88C01B
lic: License/Maintenance for hspicewin will expire on 31-dec-2020/2003.0000
lic: NODE LOCKED DEMO license on host b976c20a83914bf
lic:
Init: read install configuration file: d:\avanti\Hspice2001.4.2\meta.cfg
Init: hspice initialization file: d:\avanti\Hspice2001.4.2\hspice.ini
* hspice.ini
*
* use ascii only for initial pc star-hspice release
*
.option post = 2
.options post=2 list
*
.param vdd=4.5 tox=385e-10
+delvton=agauss(0,0.027301665v,1)
+delvtop=agauss(0,0.021374953v,1)
.temp 125
*
m1 5 2 1 1 mp l=2u w=8u
m2 4 3 5 5 mp l=2u w=8u
m3 4 2 0 0 mn l=2u w=4u
m4 4 3 0 0 mn l=2u w=4u
*
vdd 1 0 vdd
vina 2 0 0
vinb 3 0 pwl(0 0 10n 0 12n vdd
+ 30n vdd 32n 0)
cl 4 0 0.1pf
*
.meas tran tplh trig par('v(3)-0.5*vdd') val=0 fall=1
+ targ par('v(4)-0.5*vdd') val=0 rise=1
.meas tran tphl trig par('v(3)-0.5*vdd') val=0 rise=1
+ targ par('v(4)-0.5*vdd') val=0 fall=1
.meas tran tpd param=('(tplh+tphl)/2')
*
*
.model mp pmos (level=2 ld=0.250u tox=tox
+ nsub=6.193910e+15 vto=-0.813142857v delvto=delvtop kp=2.2870e-05
+ gamma=0.4793 phi=0.6 u0=241.796 uexp=0.214214
+ ucrit=19100.4 delta=0.859687 vmax=47972.9 xj=0.250u
+ lambda=5.403347e-02 nfs=2.351269e+11 neff=1.001
+ nss=1.0e+12 tpg=-1.0 rsh=76.020 cgdo=3.54775e-10
+ cgso=3.54775e-10 cgbo=6.981174e-10 cj=2.2624e-04
+ mj=0.46650 cjsw=2.3825e-10 mjsw=0.24660 pb=0.700)
.model mn nmos (level=2 ld=0.250u tox=tox
+ nsub=2.13818e+16 vto=0.812785714v delvto=delvton kp=5.7790e-05
+ gamma=0.8905 phi=0.6 u0=610.8 uexp=0.244555
+ ucrit=128615 delta=2.0298 vmax=92227.9 xj=0.250u
+ lambda=1.956049e-02 nfs=2.307838e+12 neff=1
+ nss=1.0e+12 tpg=1.0 rsh=22.730 cgdo=3.54775e-10
+ cgso=3.54775e-10 cgbo=6.354506e-10 cj=3.7740e-04
+ mj=0.45890 cjsw=5.1360e-10 mjsw=0.36620 pb=0.800)
*
.tran 0.5n 50n sweep monte=30
*
.probe v(2) v(3) v(4)
.end
scientific notation:
a=10**-18 f=10**-15 p=10**-12 n=10**-9 u=10**-6
m=10**-3 k=10**3 x=10**6 g=10**9
circuit parameter definitions
parameter = value
0:vdd = 4.5000
0:tox = 38.5000n
0:delvton = 0.
0:delvtop = 0.
0:tplh = 0.
0:tphl = 0.
0:tpd = 0.
constants - tnom kt vt gapsi ni
298.1500 4.116e-21 25.6918m 1.1156 1.256e+16
1 ******Star-HSPICE -- 2001.4.2 (20020307) 21:05:57 09/09/2007 pcnt
******
*exercise7_3 monte carlo analysis for cmos nor gate *
****** mos model parameters tnom= 25.000 temp= 25.000
******
***************************************************************************
*** common model parameters model name: 0:mp model type:pmos ***
***************************************************************************
names values units names values units names values units
----- ------ ----- ----- ------ ----- ----- ------ -----
1*** geometry parameters ***
ld= 250.00n meters lmlt= 1.00 wd= 0. meters
wmlt= 1.00 xl= 0. meters xw= 0. meters
lref= 0. meters wref= 0. meters lref= 0. meters
wref= 0. meters xlref= 0. meters xwref= 0. meters
lmin= 0. meters wmin= 0. meters lmax= 0. meters
wmax= 0. meters
2*** threshold voltage parameters ***
vto=-813.14m volts nss= 1.0e+12 1/cm**2 tpg= -1.00
phi= 600.00m volts gamma= 479.30m v**0.5 bulk= gnd
ngate= 0. cm**3 nsub= 6.1e+15 1/cm**3 delvto= 0. volts
3*** gate overlap capacitance parameters ***
cgbo= 698.12p f/meter cgdo= 354.78p f/meter cgso= 354.78p f/meter
meto= 0. meters
4*** gate capacitance parameters ***
capop= 2.00 cf1= 0. volts cf2= 100.00m volts
cf3= 1.00 volts cf4= 50.00 cf5= 666.67m
cf6= 500.00 xqc= 500.00m tox= 38.50n meters
cox= 896.92u f/m**2
5*** diffusion parasitic parameters ***
acm= 0. is= 10.00f amps js= 0. a/m**2
jsw= 0. amp/m nds= 1.00 cbd= 0. farad
cbs= 0. farad cj= 226.24u f/m**2 cjsw= 238.25p f/m
cjgate= 238.25p f/m mj= 466.50m mjsw= 246.60m
pb= 700.00m volts php= 700.00m volts tt= 0. secs
hdif= 0. meters ldif= 0. meters rd= 0. ohms
rs= 0. ohms rsh= 76.02 ohms/sq fc= 0.
alpha= 0. vcr= 0. volts iirat= 0.
rdc= 0. ohms rsc= 0. ohms n= 1.00
vnds= -1.00 volts
6*** temperature effect parameters ***
tlev= 0. tlevc= 0. eg= 1.11 ev
gap1= 702.00u ev/deg gap2= 1.11k deg xti= 0.
bex= -1.50 tcv= 0. v/deg k trd= 0. /deg
trs= 0. /deg cta= 0. /deg ctp= 0. /deg
7*** noise parameters ***
kf= 0. af= 1.00 nlev= 2.00
gdsnoi= 1.00
*** level 2 model parameters ***
delta= 859.69m ecrit= 0. v/m lambda= 54.03m /v
nfs= 235.13g 1/cm**2 ucrit= 19.10k v/cm uexp= 214.21m
utra= 0. uo= 241.80 cm**2/vs xj= 250.00n meters
neff= 1.00 vmax= 47.97k m/sec kp= 22.87u a/v**2
mob=-1.2e-29 deriv= 0.
***************************************************************************
*** common model parameters model name: 0:mn model type:nmos ***
***************************************************************************
names values units names values units names values units
----- ------ ----- ----- ------ ----- ----- ------ -----
1*** geometry parameters ***
ld= 250.00n meters lmlt= 1.00 wd= 0. meters
wmlt= 1.00 xl= 0. meters xw= 0. meters
lref= 0. meters wref= 0. meters lref= 0. meters
wref= 0. meters xlref= 0. meters xwref= 0. meters
lmin= 0. meters wmin= 0. meters lmax= 0. meters
wmax= 0. meters
2*** threshold voltage parameters ***
vto= 812.79m volts nss= 1.0e+12 1/cm**2 tpg= 1.00
phi= 600.00m volts gamma= 890.50m v**0.5 bulk= gnd
ngate= 0. cm**3 nsub= 2.1e+16 1/cm**3 delvto= 0. volts
3*** gate overlap capacitance parameters ***
cgbo= 635.45p f/meter cgdo= 354.78p f/meter cgso= 354.78p f/meter
meto= 0. meters
4*** gate capacitance parameters ***
capop= 2.00 cf1= 0. volts cf2= 100.00m volts
cf3= 1.00 volts cf4= 50.00 cf5= 666.67m
cf6= 500.00 xqc= 500.00m tox= 38.50n meters
cox= 896.92u f/m**2
5*** diffusion parasitic parameters ***
acm= 0. is= 10.00f amps js= 0. a/m**2
jsw= 0. amp/m nds= 1.00 cbd= 0. farad
cbs= 0. farad cj= 377.40u f/m**2 cjsw= 513.60p f/m
cjgate= 513.60p f/m mj= 458.90m mjsw= 366.20m
pb= 800.00m volts php= 800.00m volts tt= 0. secs
hdif= 0. meters ldif= 0. meters rd= 0. ohms
rs= 0. ohms rsh= 22.73 ohms/sq fc= 0.
alpha= 0. vcr= 0. volts iirat= 0.
rdc= 0. ohms rsc= 0. ohms n= 1.00
vnds= -1.00 volts
6*** temperature effect parameters ***
tlev= 0. tlevc= 0. eg= 1.11 ev
gap1= 702.00u ev/deg gap2= 1.11k deg xti= 0.
bex= -1.50 tcv= 0. v/deg k trd= 0. /deg
trs= 0. /deg cta= 0. /deg ctp= 0. /deg
7*** noise parameters ***
kf= 0. af= 1.00 nlev= 2.00
gdsnoi= 1.00
*** level 2 model parameters ***
delta= 2.03 ecrit= 0. v/m lambda= 19.56m /v
nfs= 2.3e+12 1/cm**2 ucrit= 128.62k v/cm uexp= 244.56m
utra= 0. uo= 610.80 cm**2/vs xj= 250.00n meters
neff= 1.00 vmax= 92.23k m/sec kp= 57.79u a/v**2
mob=-1.2e-29 deriv= 0.
1 ******Star-HSPICE -- 2001.4.2 (20020307) 21:05:57 09/09/2007 pcnt
******
*exercise7_3 monte carlo analysis for cmos nor gate *
****** circuit element summary tnom= 25.000 temp= 25.000
******
**** capacitors
element name 0:cl
node1 0:4
node2 0:0
model
cap eff 100.0000f
tc1 0.
tc2 0.
scale 1.0000
ic 0.
m 1.0000
w 0.
l 0.
temp 25.0000
**** independent sources
name node1 node2 dc volt ac mag ac phase type
0:vdd 0:1 0:0 4.5000 0. 0. dc
0:vina 0:2 0:0 0. 0. 0. dc
0:vinb 0:3 0:0 0. 0. 0. pwl
time value
0. 0.
10.0000n 0.
12.0000n 4.5000
30.0000n 4.5000
32.0000n 0.
**** mosfets
element name 0:m1 0:m2 0:m3 0:m4
drain 0:5 0:4 0:4 0:4
gate 0:2 0:3 0:2 0:3
source 0:1 0:5 0:0 0:0
bulk 0:1 0:5 0:0 0:0
model 0:mp 0:mp 0:mn 0:mn
w eff 8.0000u 8.0000u 4.0000u 4.0000u
l eff 1.5000u 1.5000u 1.5000u 1.5000u
rd eff 0. 0. 0. 0.
rs eff 0. 0. 0. 0.
cdsat 10.0000f 10.0000f 10.0000f 10.0000f
cssat 10.0000f 10.0000f 10.0000f 10.0000f
capbd 0. 0. 0. 0.
capbs 0. 0. 0. 0.
aic
1 ******Star-HSPICE -- 2001.4.2 (20020307) 21:05:57 09/09/2007 pcnt
******
*exercise7_3 monte carlo analysis for cmos nor gate *
****** temperature-adjusted values tnom= 25.000 temp= 125.000
******
constants - temp kt vt gapsi ni
398.1500 5.497e-21 34.3089m 1.0861 6.960e+18
*** capacitors
name eff val
*** mosfet element parameters
name rd eff rs eff cdsat cssat vto beta
0:m1 0. 0. 1.29n 1.29n 601.69m 79.04u
0:m2 0. 0. 1.29n 1.29n 601.69m 79.04u
0:m3 0. 0. 1.29n 1.29n 561.70m 99.86u
0:m4 0. 0. 1.29n 1.29n 561.70m 99.86u
1 ******Star-HSPICE -- 2001.4.2 (20020307) 21:05:57 09/09/2007 pcnt
******
*exercise7_3 monte carlo analysis for cmos nor gate *
****** transient analysis tnom= 25.000 temp= 125.000
******
*** monte carlo index = 1
*** capacitors
name eff val
*** mosfet element parameters
name rd eff rs eff cdsat cssat vto beta
MONTE CARLO PARAMETER DEFINITIONS
delvton
mn = -2.8919E-02
delvtop
mp = 9.8032E-03
node =voltage node =voltage node =voltage
+0:1 = 4.5000 0:2 = 0. 0:3 = 0.
+0:4 = 4.4988 0:5 = 4.4994
Opening plot unit= 79
file=g:\major070710\ic\cmos电路模拟与设计——基于hispice\0510601-ch7\p7-31.tr0
tplh= 2.0157E-09 targ= 3.3016E-08 trig= 3.1000E-08
tphl= 9.8393E-10 targ= 1.1984E-08 trig= 1.1000E-08
tpd= 1.4998E-09
***** job concluded
*** monte carlo index = 2
*** capacitors
name eff val
*** mosfet element parameters
name rd eff rs eff cdsat cssat vto beta
MONTE CARLO PARAMETER DEFINITIONS
delvton
mn = 4.2641E-03
delvtop
mp = -2.9817E-03
node =voltage node =voltage node =voltage
+0:1 = 4.5000 0:2 = 0. 0:3 = 0.
+0:4 = 4.4990 0:5 = 4.4995
tplh= 2.0212E-09 targ= 3.3021E-08 trig= 3.1000E-08
tphl= 1.0031E-09 targ= 1.2003E-08 trig= 1.1000E-08
tpd= 1.5121E-09
***** job concluded
*** monte carlo index = 3
*** capacitors
name eff val
*** mosfet element parameters
name rd eff rs eff cdsat cssat vto beta
MONTE CARLO PARAMETER DEFINITIONS
delvton
mn = 2.1524E-02
delvtop
mp = -2.2612E-02
node =voltage node =voltage node =voltage
+0:1 = 4.5000 0:2 = 0. 0:3 = 0.
+0:4 = 4.4990 0:5 = 4.4995
tplh= 2.0330E-09 targ= 3.3033E-08 trig= 3.1000E-08
tphl= 1.0100E-09 targ= 1.2010E-08 trig= 1.1000E-08
tpd= 1.5215E-09
***** job concluded
*** monte carlo index = 4
*** capacitors
name eff val
*** mosfet element parameters
name rd eff rs eff cdsat cssat vto beta
MONTE CARLO PARAMETER DEFINITIONS
delvton
mn = 3.0442E-02
delvtop
mp = -2.5961E-02
node =voltage node =voltage node =voltage
+0:1 = 4.5000 0:2 = 0. 0:3 = 0.
+0:4 = 4.4991 0:5 = 4.4995
tplh= 2.0344E-09 targ= 3.3034E-08 trig= 3.1000E-08
tphl= 1.0142E-09 targ= 1.2014E-08 trig= 1.1000E-08
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