sst39vf160.c

SST39VF160在uC/OS2系统中的驱动程序。支持延缓写入功能。开发环境：ads1.2

			sectorAddr = sectorAddr + flashSectorSize;
		}
		if (sectorAddr == (blockAddr + flashBlockSize)) {
			blockAddr = blockAddr + flashBlockSize;				
		}
	}
	if (sectorAddr < endPoint) {
		while ((blockAddr + flashBlockSize) <= endPoint) {
			eraseChip(ERASE_BLOCK, blockAddr, 1);
			blockAddr = blockAddr + flashBlockSize;
		}
		sectorAddr = blockAddr;
		while (sectorAddr < endPoint) {
			eraseChip(ERASE_SECTOR, sectorAddr, 1);
			sectorAddr = sectorAddr + flashSectorSize;
		}	
	}

	sectorAddr = getSectorAddr(aAddr);			//重新获取数据
	blockAddr  = getBlockAddr(aAddr);
	
	//恢复扇区开始处的数据
	tmpAddr = sectorAddr;
	tmpData = flashStaDataBack;
	for (uIndex = 0; uIndex < uBakStaDataCnt; uIndex ++) {
		uRetCode = writeFlashWord(tmpAddr , *tmpData);
		if (FLASH_OK != uRetCode) {
			goto ENDPROC;
		}
		tmpAddr = tmpAddr + 1;
		tmpData = tmpData + 1;
	}

	//写数据
	uTmpAddr = aAddr;
	tmpData  = aData;

	for (uIndex = 0; uIndex < aLength; uIndex ++) {
		tmpAddr = GetAddr(uTmpAddr);
		uRetCode = writeFlashWord(tmpAddr, *tmpData);
		if (FLASH_OK != uRetCode) {
			break;
		}
		uTmpAddr = uTmpAddr + 1;
		tmpData  = tmpData + 1;
	}

	//恢复扇区末尾处的数据
	tmpAddr = endPoint;
	tmpData = flashEndDataBack;
	for (uIndex = 0; uIndex < uBakEndDataCnt; uIndex ++) {
		uRetCode = writeFlashWord(tmpAddr , *tmpData);
		if (FLASH_OK != uRetCode) {
			goto ENDPROC;
		}
		tmpAddr = tmpAddr + 1;
		tmpData = tmpData + 1;
	}

ENDPROC:
	return uRetCode;
}


uint16 readFlashBuff(uint16 aAddr, uint16 *aData, uint16 aLength)
{
	uint16  uIndex = 0;
	uint16 *pTmpData;
	volatile uint16 *addr;

	pTmpData = aData;
	for (uIndex = 0; uIndex < aLength; uIndex ++) {
		addr = GetAddr(aAddr);
		*pTmpData = *addr;
		pTmpData = pTmpData + 1;
		aAddr = aAddr + 1;		
	}
	return uIndex;
}


void preEraseChip(void)
{
	volatile uint16 *addr;

	addr	= GetAddr(0x5555);
	addr[0] = 0xAAAA;			// 第一个写周期，地址0x5555，数据0xAA
	
	addr    = GetAddr(0x2AAA);
	addr[0] = 0x5555;			// 第二个写周期，地址0x2aaa，数据0x55
	
	addr    = GetAddr(0x5555);
	addr[0] = 0x8080;			// 第三个写周期，地址0x5555，数据0x80
	
	addr    = GetAddr(0x5555);
	addr[0] = 0xAAAA;			// 第四个写周期，地址0x5555，数据0xAA
	
	addr    = GetAddr(0x2AAA);
	addr[0] = 0x5555;			// 第五个写周期，地址0x2aaa，数据0x55
}


uint16 eraseChip(eraseType aFlag,volatile uint16 *aAddr, uint16 aNumber)
{
	uint16  uIndex    = 0;
	uint16  temp1     = 0;
	uint16  temp2     = 0;
	volatile uint16 *tmpAddr   = 0;
	uint8   uRetCode  = FLASH_OK;
 	volatile uint16 *addr;
	
	switch (aFlag)
	{
	case ERASE_ALL:										//擦除芯片
		preEraseChip();

		addr    = GetAddr(0x5555);
		addr[0] = 0x1010;								// 第六个写周期，地址0x5555，数据0x10
		
		while (1) {										// 等待操作完成 (若擦除操作没有完成，每次读操作DQ6会跳变)
			temp1 = *addr;
			temp2 = *addr;
			if (temp1 == temp2) {
				if (temp1 != 0xFFFF) {
					uRetCode = FLASH_NG;
				} 
				break;		
			}
		}
		break;

	case ERASE_BLOCK:										//删除块
		tmpAddr = aAddr;
		for (uIndex = 0; uIndex < aNumber; uIndex++) {	
			tmpAddr = tmpAddr + (uIndex * flashBlockSize);
			preEraseChip();
			tmpAddr[0] = 0x5050;							// 第六个写周期，地址:要删扇区块地址数据0xXX500
			while (1) {										// 等待操作完成 (若擦除操作没有完成，每次读操作DQ6会跳变)
				temp1 = *tmpAddr;
				temp2 = *tmpAddr;
				if (temp1 == temp2) {
					break;		
				}
			}
		}
		break;

	case ERASE_SECTOR:										//删除扇区
		tmpAddr = aAddr;
		for (uIndex = 0; uIndex < aNumber; uIndex++) {
			tmpAddr = tmpAddr + (uIndex * flashSectorSize);
			preEraseChip();
			tmpAddr[0] = 0x3030;							// 第六个写周期，地址:要删除块地址，数据0xXX30
			while (1) {										// 等待操作完成 (若擦除操作没有完成，每次读操作DQ6会跳变)
				temp1 = *tmpAddr;
				temp2 = *tmpAddr;
				if (temp1 == temp2) {
					break;		
				}
			}
		}
		break;

	}

	return uRetCode;
}


//进入查询入口命令状态（CFI）
void enterCFISatus(void) 
{
	volatile uint16 *addr;
	uint16 i,k;
	
	addr    = GetAddr(0x5555);   // 第一个写周期，地址5555H，数据XXAAH
	addr[0] = 0xAAAA;
	
	addr    = GetAddr(0x2AAA);   // 第二个写周期，地址2AAAH，数据XX55H
	addr[0] = 0x5555;
	
	addr    = GetAddr(0x5555);   // 第三个写周期，地址5555H，数据XX98H
	addr[0] = 0x9898;
	
	for (i = 0; i < 500; i++) { //等待 TIDA //TODO
		for (k = 0; k < 100; k++) {
		}
	}
}


//进入正常工作模式
void enterNormalSatus(void)
{
	volatile uint16 *addr;
	uint16 i,k;
	
	addr    = GetAddr(0x5555);   // 第一个写周期，地址5555H，数据XXAAH
	addr[0] = 0xAAAA;
	
	addr    = GetAddr(0x2AAA);   // 第二个写周期，地址2AAAH，数据XX55H
	addr[0] = 0x5555;
	
	addr    = GetAddr(0x5555);   // 第三个写周期，地址5555H，数据XX98H
	addr[0] = 0xF0F0;
	
	for (i = 0; i < 500; i++) {	 //等待 TIDA //TODO
		for (k = 0; k < 100; k++) {
		}
	}
}


uint16 readCFI(uint16 aAddr)
{
	volatile uint16 *tmpAddr;
	
	tmpAddr = GetAddr(aAddr);
	return tmpAddr[0];
}


/****************************************************************************
* 名称：main()
* 功能：SST39VF160擦除、编程操作。
****************************************************************************/
uint16 first, second, third, fourth;
uint16 mytest[64];
uint16 game[16];

int main(void)
{  
	uint16  i;
    uint8  err = 0;
	uint8  *tmp;
  
   volatile uint16  *addr;
   eraseType flags = ERASE_SECTOR;

   PINSEL0 = 0x00000000;			// 设置管脚连接GPIO   
   IO0DIR = BEEPCON; 				// 设置I/O为输出

   flashInitial();

 //  eraseChip(flags, 0x00, 1);						// FLASH全片擦除
   
   // 校验是否真正擦除。若发现有非0xFFFF的存储单元，设置err=1
   addr = GetAddr(0);
   for(i=0; i<100; i++)  			
   {  if(0xFFFF != (*addr)) err = 1;
      addr++;
   }
         
  
   tmp = (uint8 *)game;
   for (i = 0 ; i < 16 * 2 ; i++) {
	   *tmp = 'C';
	  tmp++;
   }
  writeFlashBuff(0x00, game, 16 * 2);

  i = readFlashBuff(0x10, mytest, 16);


//    writeFlashWord(0, 0x55BB);		// 向FLASH的0地址写入0x55AA
// 
//    writeFlashWord(2, 0xDDDD);
//    writeFlashWord(0, 0xDDDD);
   
   addr = GetAddr(0);
   if(0x55AA != (*addr)) err = 1;	// 读出校验，若数据错误则设置err=1
      
   if(0==err)   
   {  IO0CLR = BEEPCON;				// BEEPCON = 0
      DelayNS(20);
      IO0SET = BEEPCON;				// BEEPCON = 1
      DelayNS(20);
   }
   else
   {  
	   while(1)	
	   {  
		   IO0CLR = BEEPCON;			// BEEPCON = 0
			DelayNS(10);
			IO0SET = BEEPCON;			// BEEPCON = 1
			DelayNS(10);
		}
   }  
   
   while(1);
   return(0);
}