lpc2400.s

Keil工程例子,NXP新出的芯片lpc2478的示例代码

;//     </e> End of Dynamic Setup for CS0 Area


;//     <e> Configure External Bus Behaviour for Dynamic CS1 Area
EMC_DYNCS1_SETUP    EQU 0

;//       <h> Dynamic Memory Configuration Register (EMCDynamicConfig1)
;//         <i> Defines the configuration information for the dynamic memory CS1
;//         <o0.20> P: Write protect
;//         <o0.19> B: Buffer enable
;//         <o0.14> AM 14: External bus data width
;//           <0=> 16 bit
;//           <1=> 32 bit
;//         <o0.12> AM 12: External bus memory type
;//           <0=> High-performance
;//           <1=> Low-power SDRAM
;//         <o0.7..11> AM 11..7: External bus address mapping (Row, Bank, Column)
;//           <0x00=> 16 Mb = 2MB (2Mx8), 2 banks, row length = 11, column length = 9
;//           <0x01=> 16 Mb = 2MB (1Mx16), 2 banks, row length = 11, column length = 8
;//           <0x04=> 64 Mb = 8MB (8Mx8), 4 banks, row length = 12, column length = 9
;//           <0x05=> 64 Mb = 8MB (4Mx16), 4 banks, row length = 12, column length = 8
;//           <0x08=> 128 Mb = 16MB (16Mx8), 4 banks, row length = 12, column length = 10
;//           <0x09=> 128 Mb = 16MB (8Mx16), 4 banks, row length = 12, column length = 9
;//           <0x0C=> 256 Mb = 32MB (32Mx8), 4 banks, row length = 13, column length = 10
;//           <0x0D=> 256 Mb = 32MB (16Mx16), 4 banks, row length = 13, column length = 9
;//           <0x10=> 512 Mb = 64MB (64Mx8), 4 banks, row length = 13, column length = 11
;//           <0x11=> 512 Mb = 64MB (32Mx16), 4 banks, row length = 13, column length = 10
;//         <o0.3..4> MD: Memory device
;//           <0=> SDRAM
;//           <1=> Low-power SDRAM
;//           <2=> Micron SyncFlash
;//       </h>
EMC_DYN_CFG1_Val    EQU 0x00000000

;//       <h> Dynamic Memory RAS & CAS Delay register (EMCDynamicRASCAS1)
;//         <i> Controls the RAS and CAS latencies for the dynamic memory CS1
;//         <o0.8..9> CAS: CAS latency
;//           <1=> One CCLK cycle
;//           <2=> Two CCLK cycles
;//           <3=> Three CCLK cycles
;//         <o0.0..1> RAS: RAS latency (active to read/write delay)
;//           <1=> One CCLK cycle
;//           <2=> Two CCLK cycles
;//           <3=> Three CCLK cycles
;//       </h>
EMC_DYN_RASCAS1_Val EQU 0x00000303

;//     </e> End of Dynamic Setup for CS1 Area

;//     <e> Configure External Bus Behaviour for Dynamic CS2 Area
EMC_DYNCS2_SETUP    EQU 0

;//       <h> Dynamic Memory Configuration Register (EMCDynamicConfig2)
;//         <i> Defines the configuration information for the dynamic memory CS2
;//         <o0.20> P: Write protect
;//         <o0.19> B: Buffer enable
;//         <o0.14> AM 14: External bus data width
;//           <0=> 16 bit
;//           <1=> 32 bit
;//         <o0.12> AM 12: External bus memory type
;//           <0=> High-performance
;//           <1=> Low-power SDRAM
;//         <o0.7..11> AM 11..7: External bus address mapping (Row, Bank, Column)
;//           <0x00=> 16 Mb = 2MB (2Mx8), 2 banks, row length = 11, column length = 9
;//           <0x01=> 16 Mb = 2MB (1Mx16), 2 banks, row length = 11, column length = 8
;//           <0x04=> 64 Mb = 8MB (8Mx8), 4 banks, row length = 12, column length = 9
;//           <0x05=> 64 Mb = 8MB (4Mx16), 4 banks, row length = 12, column length = 8
;//           <0x08=> 128 Mb = 16MB (16Mx8), 4 banks, row length = 12, column length = 10
;//           <0x09=> 128 Mb = 16MB (8Mx16), 4 banks, row length = 12, column length = 9
;//           <0x0C=> 256 Mb = 32MB (32Mx8), 4 banks, row length = 13, column length = 10
;//           <0x0D=> 256 Mb = 32MB (16Mx16), 4 banks, row length = 13, column length = 9
;//           <0x10=> 512 Mb = 64MB (64Mx8), 4 banks, row length = 13, column length = 11
;//           <0x11=> 512 Mb = 64MB (32Mx16), 4 banks, row length = 13, column length = 10
;//         <o0.3..4> MD: Memory device
;//           <0=> SDRAM
;//           <1=> Low-power SDRAM
;//           <2=> Micron SyncFlash
;//       </h>
EMC_DYN_CFG2_Val    EQU 0x00000000

;//       <h> Dynamic Memory RAS & CAS Delay register (EMCDynamicRASCAS2)
;//         <i> Controls the RAS and CAS latencies for the dynamic memory CS2
;//         <o0.8..9> CAS: CAS latency
;//           <1=> One CCLK cycle
;//           <2=> Two CCLK cycles
;//           <3=> Three CCLK cycles
;//         <o0.0..1> RAS: RAS latency (active to read/write delay)
;//           <1=> One CCLK cycle
;//           <2=> Two CCLK cycles
;//           <3=> Three CCLK cycles
;//       </h>
EMC_DYN_RASCAS2_Val EQU 0x00000303

;//     </e> End of Dynamic Setup for CS2 Area

;//     <e> Configure External Bus Behaviour for Dynamic CS3 Area
EMC_DYNCS3_SETUP    EQU 0

;//       <h> Dynamic Memory Configuration Register (EMCDynamicConfig3)
;//         <i> Defines the configuration information for the dynamic memory CS3
;//         <o0.20> P: Write protect
;//         <o0.19> B: Buffer enable
;//         <o0.14> AM 14: External bus data width
;//           <0=> 16 bit
;//           <1=> 32 bit
;//         <o0.12> AM 12: External bus memory type
;//           <0=> High-performance
;//           <1=> Low-power SDRAM
;//         <o0.7..11> AM 11..7: External bus address mapping (Row, Bank, Column)
;//           <0x00=> 16 Mb = 2MB (2Mx8), 2 banks, row length = 11, column length = 9
;//           <0x01=> 16 Mb = 2MB (1Mx16), 2 banks, row length = 11, column length = 8
;//           <0x04=> 64 Mb = 8MB (8Mx8), 4 banks, row length = 12, column length = 9
;//           <0x05=> 64 Mb = 8MB (4Mx16), 4 banks, row length = 12, column length = 8
;//           <0x08=> 128 Mb = 16MB (16Mx8), 4 banks, row length = 12, column length = 10
;//           <0x09=> 128 Mb = 16MB (8Mx16), 4 banks, row length = 12, column length = 9
;//           <0x0C=> 256 Mb = 32MB (32Mx8), 4 banks, row length = 13, column length = 10
;//           <0x0D=> 256 Mb = 32MB (16Mx16), 4 banks, row length = 13, column length = 9
;//           <0x10=> 512 Mb = 64MB (64Mx8), 4 banks, row length = 13, column length = 11
;//           <0x11=> 512 Mb = 64MB (32Mx16), 4 banks, row length = 13, column length = 10
;//         <o0.3..4> MD: Memory device
;//           <0=> SDRAM
;//           <1=> Low-power SDRAM
;//           <2=> Micron SyncFlash
;//       </h>
EMC_DYN_CFG3_Val    EQU 0x00000000

;//       <h> Dynamic Memory RAS & CAS Delay register (EMCDynamicRASCAS3)
;//         <i> Controls the RAS and CAS latencies for the dynamic memory CS3
;//         <o0.8..9> CAS: CAS latency
;//           <1=> One CCLK cycle
;//           <2=> Two CCLK cycles
;//           <3=> Three CCLK cycles
;//         <o0.0..1> RAS: RAS latency (active to read/write delay)
;//           <1=> One CCLK cycle
;//           <2=> Two CCLK cycles
;//           <3=> Three CCLK cycles
;//       </h>
EMC_DYN_RASCAS3_Val EQU 0x00000303

;//     </e> End of Dynamic Setup for CS3 Area

;//   </e> End of Dynamic Setup

;//       Static Memory Interface Setup ----------------------------------------
;//   <e> Static Memory Interface Setup
EMC_STATIC_SETUP    EQU 1

;//         Configure External Bus Behaviour for Static CS0 Area ---------------
;//     <e> Configure External Bus Behaviour for Static CS0 Area
EMC_STACS0_SETUP    EQU 1

;//       <h> Static Memory Configuration Register (EMCStaticConfig0)
;//         <i> Defines the configuration information for the static memory CS0
;//         <o0.20> WP: Write protect
;//         <o0.19> B: Buffer enable
;//         <o0.8> EW: Extended wait enable
;//         <o0.7> PB: Byte lane state
;//           <0=> For reads BLSn are HIGH, for writes BLSn are LOW
;//           <1=> For reads BLSn are LOW, for writes BLSn are LOW
;//         <o0.6> PC: Chip select polarity
;//           <0=> Active LOW chip select
;//           <1=> Active HIGH chip select
;//         <o0.3> PM: Page mode enable
;//         <o0.0..1> MW: Memory width
;//           <0=> 8 bit
;//           <1=> 16 bit
;//           <2=> 32 bit
;//       </h>
EMC_STA_CFG0_Val    EQU 0x00000081

;//       <h> Static Memory Write Enable Delay Register (EMCStaticWaitWen0)
;//         <i> Selects the delay from CS0 to write enable
;//         <o.0..3> WAITWEN: Wait write enable <1-16> <#-1>
;//           <i> The delay is in CCLK cycles
;//       </h>
EMC_STA_WWEN0_Val   EQU 0x00000002

;//       <h> Static Memory Output Enable Delay register (EMCStaticWaitOen0)
;//         <i> Selects the delay from CS0 or address change, whichever is later, to output enable
;//         <o.0..3> WAITOEN: Wait output enable <0-15>
;//           <i> The delay is in CCLK cycles
;//       </h>
EMC_STA_WOEN0_Val   EQU 0x00000002
                                      
;//       <h> Static Memory Read Delay Register (EMCStaticWaitRd0)
;//         <i> Selects the delay from CS0 to a read access
;//         <o.0..4> WAITRD: Non-page mode read wait states or asynchronous page mode read first access wait states <1-32> <#-1>
;//           <i> The delay is in CCLK cycles
;//       </h>
EMC_STA_WRD0_Val    EQU 0x0000001F

;//       <h> Static Memory Page Mode Read Delay Register (EMCStaticWaitPage0)
;//         <i> Selects the delay for asynchronous page mode sequential accesses for CS0
;//         <o.0..4> WAITPAGE: Asynchronous page mode read after the first read wait states <1-32> <#-1>
;//           <i> The delay is in CCLK cycles
;//       </h>
EMC_STA_WPAGE0_Val  EQU 0x0000001F

;//       <h> Static Memory Write Delay Register (EMCStaticWaitWr0)
;//         <i> Selects the delay from CS0 to a write access
;//         <o.0..4> WAITWR: Write wait states <2-33> <#-2>
;//           <i> The delay is in CCLK cycles
;//       </h>
EMC_STA_WWR0_Val    EQU 0x0000001F

;//       <h> Static Memory Turn Round Delay Register (EMCStaticWaitTurn0)
;//         <i> Selects the number of bus turnaround cycles for CS0
;//         <o.0..4> WAITTURN: Bus turnaround cycles <1-16> <#-1>
;//           <i> The delay is in CCLK cycles
;//       </h>
EMC_STA_WTURN0_Val  EQU 0x0000000F

;//     </e> End of Static Setup for Static CS0 Area

;//         Configure External Bus Behaviour for Static CS1 Area ---------------
;//     <e> Configure External Bus Behaviour for Static CS1 Area
EMC_STACS1_SETUP    EQU 0

;//       <h> Static Memory Configuration Register (EMCStaticConfig1)
;//         <i> Defines the configuration information for the static memory CS1
;//         <o0.20> WP: Write protect
;//         <o0.19> B: Buffer enable
;//         <o0.8> EW: Extended wait enable
;//         <o0.7> PB: Byte lane state
;//           <0=> For reads BLSn are HIGH, for writes BLSn are LOW
;//           <1=> For reads BLSn are LOW, for writes BLSn are LOW
;//         <o0.6> PC: Chip select polarity
;//           <0=> Active LOW chip select
;//           <1=> Active HIGH chip select
;//         <o0.3> PM: Page mode enable
;//         <o0.0..1> MW: Memory width
;//           <0=> 8 bit
;//           <1=> 16 bit
;//           <2=> 32 bit
;//       </h>
EMC_STA_CFG1_Val    EQU 0x00000000

;//       <h> Static Memory Write Enable Delay Register (EMCStaticWaitWen1)
;//         <i> Selects the delay from CS1 to write enable
;//         <o.0..3> WAITWEN: Wait write enable <1-16> <#-1>
;//           <i> The delay is in CCLK cycles
;//       </h>
EMC_STA_WWEN1_Val   EQU 0x00000000

;//       <h> Static Memory Output Enable Delay register (EMCStaticWaitOen1)
;//         <i> Selects the delay from CS1 or address change, whichever is later, to output enable
;//         <o.0..3> WAITOEN: Wait output enable <0-15>
;//           <i> The delay is in CCLK cycles
;//       </h>
EMC_STA_WOEN1_Val   EQU 0x00000000
                                      
;//       <h> Static Memory Read Delay Register (EMCStaticWaitRd1)
;//         <i> Selects the delay from CS1 to a read access
;//         <o.0..4> WAITRD: Non-page mode read wait states or asynchronous page mode read first access wait states <1-32> <#-1>
;//           <i> The delay is in CCLK cycles
;//       </h>
EMC_STA_WRD1_Val    EQU 0x0000001F

;//       <h> Static Memory Page Mode Read Delay Register (EMCStaticWaitPage0)
;//         <i> Selects the delay for asynchronous page mode sequential accesses for CS1
;//         <o.0..4> WAITPAGE: Asynchronous page mode read after the first read wait states <1-32> <#-1>
;//           <i> The delay is in CCLK cycles
;//       </h>
EMC_STA_WPAGE1_Val  EQU 0x0000001F

;//       <h> Static Memory Write Delay Register (EMCStaticWaitWr1)
;//         <i> Selects the delay from CS1 to a write access
;//         <o.0..4> WAITWR: Write wait states <2-33> <#-2>
;//           <i> The delay is in CCLK cycles
;//       </h>
EMC_STA_WWR1_Val    EQU  0x0000001F

;//       <h> Static Memory Turn Round Delay Register (EMCStaticWaitTurn1)
;//         <i> Selects the number of bus turnaround cycles for CS1
;//         <o.0..4> WAITTURN: Bus turnaround cycles <1-16> <#-1>
;//           <i> The delay is in CCLK cycles
;//       </h>
EMC_STA_WTURN1_Val  EQU 0x0000000F

;//     </e> End of Static Setup for Static CS1 Area

;//         Configure External Bus Behaviour for Static CS2 Area ---------------
;//     <e> Configure External Bus Behaviour for Static CS2 Area
EMC_STACS2_SETUP    EQU 0

;//       <h> Static Memory Configuration Register (EMCStaticConfig2)
;//         <i> Defines the configuration information for the static memory CS2
;//         <o0.20> WP: Write protect
;//         <o0.19> B: Buffer enable
;//         <o0.8> EW: Extended wait enable
;//         <o0.7> PB: Byte lane state
;//           <0=> For reads BLSn are HIGH, for writes BLSn are LOW
;//           <1=> For reads BLSn are LOW, for writes BLSn are LOW
;//         <o0.6> PC: Chip select polarity
;//           <0=> Active LOW chip select
;//           <1=> Active HIGH chip select
;//         <o0.3> PM: Page mode enable
;//         <o0.0..1> MW: Memory width
;//           <0=> 8 bit
;//           <1=> 16 bit
;//           <2=> 32 bit
;//       </h>
EMC_STA_CFG2_Val    EQU 0x00000000