e1000_ich8lan.c

linux系统的网卡驱动包

	e1000_release_nvm(hw);

out:
	return ret_val;
}

/**
 *  e1000_update_nvm_checksum_ich8lan - Update the checksum for NVM
 *  @hw: pointer to the HW structure
 *
 *  The NVM checksum is updated by calling the generic update_nvm_checksum,
 *  which writes the checksum to the shadow ram.  The changes in the shadow
 *  ram are then committed to the EEPROM by processing each bank at a time
 *  checking for the modified bit and writing only the pending changes.
 *  After a succesful commit, the shadow ram is cleared and is ready for
 *  future writes.
 **/
static s32 e1000_update_nvm_checksum_ich8lan(struct e1000_hw *hw)
{
	struct e1000_nvm_info *nvm = &hw->nvm;
	struct e1000_dev_spec_ich8lan *dev_spec;
	u32 i, act_offset, new_bank_offset, old_bank_offset, bank;
	s32 ret_val;
	u16 data;

	DEBUGFUNC("e1000_update_nvm_checksum_ich8lan");

	dev_spec = (struct e1000_dev_spec_ich8lan *)hw->dev_spec;

	ret_val = e1000_update_nvm_checksum_generic(hw);
	if (ret_val)
		goto out;

	if (nvm->type != e1000_nvm_flash_sw)
		goto out;

	ret_val = e1000_acquire_nvm(hw);
	if (ret_val)
		goto out;

	/*
	 * We're writing to the opposite bank so if we're on bank 1,
	 * write to bank 0 etc.  We also need to erase the segment that
	 * is going to be written
	 */
	ret_val =  e1000_valid_nvm_bank_detect_ich8lan(hw, &bank);
	if (ret_val != E1000_SUCCESS)
		goto out;

	if (bank == 0) {
		new_bank_offset = nvm->flash_bank_size;
		old_bank_offset = 0;
		e1000_erase_flash_bank_ich8lan(hw, 1);
	} else {
		old_bank_offset = nvm->flash_bank_size;
		new_bank_offset = 0;
		e1000_erase_flash_bank_ich8lan(hw, 0);
	}

	for (i = 0; i < E1000_SHADOW_RAM_WORDS; i++) {
		/*
		 * Determine whether to write the value stored
		 * in the other NVM bank or a modified value stored
		 * in the shadow RAM
		 */
		if (dev_spec->shadow_ram[i].modified) {
			data = dev_spec->shadow_ram[i].value;
		} else {
			e1000_read_flash_word_ich8lan(hw,
			                              i + old_bank_offset,
			                              &data);
		}

		/*
		 * If the word is 0x13, then make sure the signature bits
		 * (15:14) are 11b until the commit has completed.
		 * This will allow us to write 10b which indicates the
		 * signature is valid.  We want to do this after the write
		 * has completed so that we don't mark the segment valid
		 * while the write is still in progress
		 */
		if (i == E1000_ICH_NVM_SIG_WORD)
			data |= E1000_ICH_NVM_SIG_MASK;

		/* Convert offset to bytes. */
		act_offset = (i + new_bank_offset) << 1;

		usec_delay(100);
		/* Write the bytes to the new bank. */
		ret_val = e1000_retry_write_flash_byte_ich8lan(hw,
		                                               act_offset,
		                                               (u8)data);
		if (ret_val)
			break;

		usec_delay(100);
		ret_val = e1000_retry_write_flash_byte_ich8lan(hw,
		                                          act_offset + 1,
		                                          (u8)(data >> 8));
		if (ret_val)
			break;
	}

	/*
	 * Don't bother writing the segment valid bits if sector
	 * programming failed.
	 */
	if (ret_val) {
		DEBUGOUT("Flash commit failed.\n");
		e1000_release_nvm(hw);
		goto out;
	}

	/*
	 * Finally validate the new segment by setting bit 15:14
	 * to 10b in word 0x13 , this can be done without an
	 * erase as well since these bits are 11 to start with
	 * and we need to change bit 14 to 0b
	 */
	act_offset = new_bank_offset + E1000_ICH_NVM_SIG_WORD;
	e1000_read_flash_word_ich8lan(hw, act_offset, &data);
	data &= 0xBFFF;
	ret_val = e1000_retry_write_flash_byte_ich8lan(hw,
	                                               act_offset * 2 + 1,
	                                               (u8)(data >> 8));
	if (ret_val) {
		e1000_release_nvm(hw);
		goto out;
	}

	/*
	 * And invalidate the previously valid segment by setting
	 * its signature word (0x13) high_byte to 0b. This can be
	 * done without an erase because flash erase sets all bits
	 * to 1's. We can write 1's to 0's without an erase
	 */
	act_offset = (old_bank_offset + E1000_ICH_NVM_SIG_WORD) * 2 + 1;
	ret_val = e1000_retry_write_flash_byte_ich8lan(hw, act_offset, 0);
	if (ret_val) {
		e1000_release_nvm(hw);
		goto out;
	}

	/* Great!  Everything worked, we can now clear the cached entries. */
	for (i = 0; i < E1000_SHADOW_RAM_WORDS; i++) {
		dev_spec->shadow_ram[i].modified = FALSE;
		dev_spec->shadow_ram[i].value = 0xFFFF;
	}

	e1000_release_nvm(hw);

	/*
	 * Reload the EEPROM, or else modifications will not appear
	 * until after the next adapter reset.
	 */
	e1000_reload_nvm(hw);
	msec_delay(10);

out:
	return ret_val;
}

/**
 *  e1000_validate_nvm_checksum_ich8lan - Validate EEPROM checksum
 *  @hw: pointer to the HW structure
 *
 *  Check to see if checksum needs to be fixed by reading bit 6 in word 0x19.
 *  If the bit is 0, that the EEPROM had been modified, but the checksum was
 *  not calculated, in which case we need to calculate the checksum and set
 *  bit 6.
 **/
static s32 e1000_validate_nvm_checksum_ich8lan(struct e1000_hw *hw)
{
	s32 ret_val = E1000_SUCCESS;
	u16 data;

	DEBUGFUNC("e1000_validate_nvm_checksum_ich8lan");

	/*
	 * Read 0x19 and check bit 6.  If this bit is 0, the checksum
	 * needs to be fixed.  This bit is an indication that the NVM
	 * was prepared by OEM software and did not calculate the
	 * checksum...a likely scenario.
	 */
	ret_val = e1000_read_nvm(hw, 0x19, 1, &data);
	if (ret_val)
		goto out;

	if ((data & 0x40) == 0) {
		data |= 0x40;
		ret_val = e1000_write_nvm(hw, 0x19, 1, &data);
		if (ret_val)
			goto out;
		ret_val = e1000_update_nvm_checksum(hw);
		if (ret_val)
			goto out;
	}

	ret_val = e1000_validate_nvm_checksum_generic(hw);

out:
	return ret_val;
}

/**
 *  e1000_write_flash_data_ich8lan - Writes bytes to the NVM
 *  @hw: pointer to the HW structure
 *  @offset: The offset (in bytes) of the byte/word to read.
 *  @size: Size of data to read, 1=byte 2=word
 *  @data: The byte(s) to write to the NVM.
 *
 *  Writes one/two bytes to the NVM using the flash access registers.
 **/
static s32 e1000_write_flash_data_ich8lan(struct e1000_hw *hw, u32 offset,
                                          u8 size, u16 data)
{
	union ich8_hws_flash_status hsfsts;
	union ich8_hws_flash_ctrl hsflctl;
	u32 flash_linear_addr;
	u32 flash_data = 0;
	s32 ret_val = -E1000_ERR_NVM;
	u8 count = 0;

	DEBUGFUNC("e1000_write_ich8_data");

	if (size < 1 || size > 2 || data > size * 0xff ||
	    offset > ICH_FLASH_LINEAR_ADDR_MASK)
		goto out;

	flash_linear_addr = (ICH_FLASH_LINEAR_ADDR_MASK & offset) +
	                    hw->nvm.flash_base_addr;

	do {
		usec_delay(1);
		/* Steps */
		ret_val = e1000_flash_cycle_init_ich8lan(hw);
		if (ret_val != E1000_SUCCESS)
			break;

		hsflctl.regval = E1000_READ_FLASH_REG16(hw, ICH_FLASH_HSFCTL);
		/* 0b/1b corresponds to 1 or 2 byte size, respectively. */
		hsflctl.hsf_ctrl.fldbcount = size -1;
		hsflctl.hsf_ctrl.flcycle = ICH_CYCLE_WRITE;
		E1000_WRITE_FLASH_REG16(hw, ICH_FLASH_HSFCTL, hsflctl.regval);

		E1000_WRITE_FLASH_REG(hw, ICH_FLASH_FADDR, flash_linear_addr);

		if (size == 1)
			flash_data = (u32)data & 0x00FF;
		else
			flash_data = (u32)data;

		E1000_WRITE_FLASH_REG(hw, ICH_FLASH_FDATA0, flash_data);

		/*
		 * check if FCERR is set to 1 , if set to 1, clear it
		 * and try the whole sequence a few more times else done
		 */
		ret_val = e1000_flash_cycle_ich8lan(hw,
		                               ICH_FLASH_WRITE_COMMAND_TIMEOUT);
		if (ret_val == E1000_SUCCESS) {
			break;
		} else {
			/*
			 * If we're here, then things are most likely
			 * completely hosed, but if the error condition
			 * is detected, it won't hurt to give it another
			 * try...ICH_FLASH_CYCLE_REPEAT_COUNT times.
			 */
			hsfsts.regval = E1000_READ_FLASH_REG16(hw,
			                                      ICH_FLASH_HSFSTS);
			if (hsfsts.hsf_status.flcerr == 1) {
				/* Repeat for some time before giving up. */
				continue;
			} else if (hsfsts.hsf_status.flcdone == 0) {
				DEBUGOUT("Timeout error - flash cycle "
				         "did not complete.");
				break;
			}
		}
	} while (count++ < ICH_FLASH_CYCLE_REPEAT_COUNT);

out:
	return ret_val;
}

/**
 *  e1000_write_flash_byte_ich8lan - Write a single byte to NVM
 *  @hw: pointer to the HW structure
 *  @offset: The index of the byte to read.
 *  @data: The byte to write to the NVM.
 *
 *  Writes a single byte to the NVM using the flash access registers.
 **/
static s32 e1000_write_flash_byte_ich8lan(struct e1000_hw *hw, u32 offset,
                                          u8 data)
{
	u16 word = (u16)data;

	DEBUGFUNC("e1000_write_flash_byte_ich8lan");

	return e1000_write_flash_data_ich8lan(hw, offset, 1, word);
}

/**
 *  e1000_retry_write_flash_byte_ich8lan - Writes a single byte to NVM
 *  @hw: pointer to the HW structure
 *  @offset: The offset of the byte to write.
 *  @byte: The byte to write to the NVM.
 *
 *  Writes a single byte to the NVM using the flash access registers.
 *  Goes through a retry algorithm before giving up.
 **/
static s32 e1000_retry_write_flash_byte_ich8lan(struct e1000_hw *hw,
                                                u32 offset, u8 byte)
{
	s32 ret_val;
	u16 program_retries;

	DEBUGFUNC("e1000_retry_write_flash_byte_ich8lan");

	ret_val = e1000_write_flash_byte_ich8lan(hw, offset, byte);
	if (ret_val == E1000_SUCCESS)
		goto out;

	for (program_retries = 0; program_retries < 100; program_retries++) {
		DEBUGOUT2("Retrying Byte %2.2X at offset %u\n", byte, offset);
		usec_delay(100);
		ret_val = e1000_write_flash_byte_ich8lan(hw, offset, byte);
		if (ret_val == E1000_SUCCESS)
			break;
	}
	if (program_retries == 100) {
		ret_val = -E1000_ERR_NVM;
		goto out;
	}

out:
	return ret_val;
}

/**
 *  e1000_erase_flash_bank_ich8lan - Erase a bank (4k) from NVM
 *  @hw: pointer to the HW structure
 *  @bank: 0 for first bank, 1 for second bank, etc.
 *
 *  Erases the bank specified. Each bank is a 4k block. Banks are 0 based.
 *  bank N is 4096 * N + flash_reg_addr.
 **/
static s32 e1000_erase_flash_bank_ich8lan(struct e1000_hw *hw, u32 bank)
{
	struct e1000_nvm_info *nvm = &hw->nvm;
	union ich8_hws_flash_status hsfsts;
	union ich8_hws_flash_ctrl hsflctl;
	u32 flash_linear_addr;
	/* bank size is in 16bit words - adjust to bytes */
	u32 flash_bank_size = nvm->flash_bank_size * 2;
	s32  ret_val = E1000_SUCCESS;
	s32  count = 0;
	s32  j, iteration, sector_size;

	DEBUGFUNC("e1000_erase_flash_bank_ich8lan");

	hsfsts.regval = E1000_READ_FLASH_REG16(hw, ICH_FLASH_HSFSTS);

	/*
	 * Determine HW Sector size: Read BERASE bits of hw flash status
	 * register
	 * 00: The Hw sector is 256 bytes, hence we need to erase 16
	 *     consecutive sectors.  The start index for the nth Hw sector
	 *     can be calculated as = bank * 4096 + n * 256
	 * 01: The Hw sector is 4K bytes, hence we need to erase 1 sector.
	 *     The start index for the nth Hw sector can be calculated
	 *     as = bank * 4096
	 * 10: The Hw sector is 8K bytes, nth sector = bank * 8192
	 *     (ich9 only, otherwise error condition)
	 * 11: The Hw sector is 64K bytes, nth sector = bank * 65536
	 */
	switch (hsfsts.hsf_status.berasesz) {
	case 0:
		/* Hw sector size 256 */
		sector_size = ICH_FLASH_SEG_SIZE_256;
		iteration = flash_bank_size / ICH_FLASH_SEG_SIZE_256;
		break;
	case 1:
		sector_size = ICH_FLASH_SEG_SIZE_4K;
		iteration = flash_bank_size / ICH_FLASH_SEG_SIZE_4K;
		break;
	case 2:
		if (hw->mac.type == e1000_ich9lan) {
			sector_size = ICH_FLASH_SEG_SIZE_8K;
			iteration = flash_bank_size / ICH_FLASH_SEG_SIZE_8K;
		} else {
			ret_val = -E1000_ERR_NVM;
			goto out;
		}
		break;
	case 3:
		sector_size = ICH_FLASH_SEG_SIZE_64K;
		iteration = flash_bank_size / ICH_FLASH_SEG_SIZE_64K;
		break;
	default:
		ret_val = -E1000_ERR_NVM;
		goto out;
	}

	/* Start with the base address, then add the sector offset. */
	flash_linear_addr = hw->nvm.flash_base_addr;
	flash_linear_addr += (bank) ? (sector_size * iteration) : 0;

	for (j = 0; j < iteration ; j++) {
		do {
			/* Steps */
			ret_val = e1000_flash_cycle_init_ich8lan(hw);
			if (ret_val)
				goto out;

			/*
			 * Write a value 11 (block Erase) in Flash
			 * Cycle field in hw flash control
			 */
			hsflctl.regval = E1000_READ_FLASH_REG16(hw,
			                                      ICH_FLASH_HSFCTL);
			hsflctl.hsf_ctrl.flcycle = ICH_CYCLE_ERASE;
			E1000_WRITE_FLASH_REG16(hw,
			                        ICH_FLASH_HSFCTL,
			                        hsflctl.regval);

			/*
			 * Write the last 24 bits of an index within the
			 * block into Flash Linear address field in Flash
			 * Address.
			 */
			flash_linear_addr += (j * sector_size);
			E1000_WRITE_FLASH_REG(hw,
			                      ICH_FLASH_FADDR,
			                      flash_linear_addr);

			ret_val = e1000_flash_cycle_ich8lan(hw,
			                       ICH_FLASH_ERASE_COMMAND_TIMEOUT);
			if (ret_val == E1000_SUCCESS) {
				break;
			} else {
				/*
				 * Check if FCERR is set to 1.  If 1,
				 * clear it and try the whole sequence