prb5_45.cir

As a consequence, more exact models of devices can be retained for analysis rather than the approxi

Prb5_45.CIR
VDD 2 0 20V
R1  1 0 200kohm
R2  2 1 400kohm
RD  2 3 4kohm
RS  4 0 100ohm
M 3 1 4 4 NMOSG
.MODEL NMOSG NMOS(Vto=4V DEV=10%
+ Kp=0.0008ApVsq Rd=1ohm Rg=1kohm)
.DC VDD 20V 20V 1V
.WCASE DC ID(M) YMAX DEVICES M
.END