ex4_6.cir

As a consequence, more exact models of devices can be retained for analysis rather than the approxi

Ex4_6.CIR - Drain-feedback bias
vi  1 0 0V    ; Value inconsequential
CC  1 2 100uF ; Value inconsequential
RF  2 3 50MEGohm
RL  3 4 3kohm
VDD 4 0 15V
M 3 2 0 0 NMOSG
.MODEL NMOSG NMOS(Vto=4V Kp=0.0008ApVsq
+ Rd=1ohm Rg=1kohm)
.DC VDD 15V 15V 1V
.PRINT DC ID(M) V(2) V(3)
.PROBE
.END