prb4_9.cir

As a consequence, more exact models of devices can be retained for analysis rather than the approxi

Prb4_9.CIR - Worst-case study
.PARAM Vpo=-3V, Ion=8mA 
RG  1 5 1MEGohm
VGG 5 0 -1V
RD  3 4 2.2kohm
VDD 4 0 15V
J 3 1 0 NJFET ; RS not used
.MODEL NJFET NJF( Vto={Vpo} Beta={Ion/Vpo^2} )
.DC PARAM Vpo -3V -6V 3V PARAM Ion 4mA 8mA 4mA
.PRINT DC ID(J) V(3)
.END