prb4_44.cir

As a consequence, more exact models of devices can be retained for analysis rather than the approxi

Old4_39.CIR
.PARAM R1value=50ohm
R1  1 0 {R1value}
R2  1 2 10kohm
RD  3 2 1kohm
RS  4 0 500ohm
VDD 2 0 15V
M 3 1 4 4 NMOSG
.MODEL NMOSG NMOS(Vto=-4V Kp=0.0008ApVsq
+ Rd=1ohm Rg=1kohm)
.DC PARAM R1value 500ohm 5kohm 10ohm
.PROBE
.END