prb4_4.cir

As a consequence, more exact models of devices can be retained for analysis rather than the approxi

Prb4_4.CIR - Self-bias
RG  1 0 5MEGohm  ; VGG not used
RS  2 0 2kohm
RD  3 4 3kohm
VDD 4 0 20V
J 3 1 2 NJFET
.MODEL NJFET NJF( Vto=-4V Beta=0.0005ApVsq 
+ Rd=1ohm Rs=1ohm CGS=2pF CGD=2pF)
.DC VDD 20V 20V 1V
.PRINT DC ID(J) V(1,2) V(3,2)
.END