ex2_4.cir

As a consequence, more exact models of devices can be retained for analysis rather than the approxi

Ex2_4.CIR - Diode static characteristic
vs 1 0 PWL(0s -5V 2s 5V)
D  1 2 bDMOD
R  2 0 2kohms
.MODEL bDMOD D(n=4 Is=15uA BV=4) ; Nonideal  
*.MODEL DMOD D(n=0.0001)     ; Ideal
.TRAN .1us 2s
.PROBE
.END