📄 mtd-abi.h
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/* * $Id: mtd-abi.h,v 1.7 2004/11/23 15:37:32 gleixner Exp $ * * Portions of MTD ABI definition which are shared by kernel and user space */#ifndef __MTD_ABI_H__#define __MTD_ABI_H__struct erase_info_user { uint32_t start; uint32_t length;};struct mtd_oob_buf { uint32_t start; uint32_t length; unsigned char *ptr;};#define MTD_ABSENT 0#define MTD_RAM 1#define MTD_ROM 2#define MTD_NORFLASH 3#define MTD_NANDFLASH 4#define MTD_PEROM 5#define MTD_OTHER 14#define MTD_UNKNOWN 15#define MTD_CLEAR_BITS 1 /* Bits can be cleared (flash) */#define MTD_SET_BITS 2 /* Bits can be set */#define MTD_ERASEABLE 4 /* Has an erase function */#define MTD_WRITEB_WRITEABLE 8 /* Direct IO is possible */#define MTD_VOLATILE 16 /* Set for RAMs */#define MTD_XIP 32 /* eXecute-In-Place possible */#define MTD_OOB 64 /* Out-of-band data (NAND flash) */#define MTD_ECC 128 /* Device capable of automatic ECC */#define MTD_NO_VIRTBLOCKS 256 /* Virtual blocks not allowed *//* Some common devices / combinations of capabilities */#define MTD_CAP_ROM 0#define MTD_CAP_RAM (MTD_CLEAR_BITS|MTD_SET_BITS|MTD_WRITEB_WRITEABLE)#define MTD_CAP_NORFLASH (MTD_CLEAR_BITS|MTD_ERASEABLE)#define MTD_CAP_NANDFLASH (MTD_CLEAR_BITS|MTD_ERASEABLE|MTD_OOB)#define MTD_WRITEABLE (MTD_CLEAR_BITS|MTD_SET_BITS)/* Types of automatic ECC/Checksum available */#define MTD_ECC_NONE 0 /* No automatic ECC available */#define MTD_ECC_RS_DiskOnChip 1 /* Automatic ECC on DiskOnChip */#define MTD_ECC_SW 2 /* SW ECC for Toshiba & Samsung devices *//* ECC byte placement */#define MTD_NANDECC_OFF 0 /* Switch off ECC (Not recommended) */#define MTD_NANDECC_PLACE 1 /* Use the given placement in the structure (YAFFS1 legacy mode) */#define MTD_NANDECC_AUTOPLACE 2 /* Use the default placement scheme */#define MTD_NANDECC_PLACEONLY 3 /* Use the given placement in the structure (Do not store ecc result on read) */#define MTD_NANDECC_AUTOPL_USR 4 /* Use the given autoplacement scheme rather than using the default */struct mtd_info_user { uint8_t type; uint32_t flags; uint32_t size; /* Total size of the MTD */ uint32_t erasesize; uint32_t oobblock; /* Size of OOB blocks (e.g. 512) */ uint32_t oobsize; /* Amount of OOB data per block (e.g. 16) */ uint32_t ecctype; uint32_t eccsize;};struct region_info_user { uint32_t offset; /* At which this region starts, * from the beginning of the MTD */ uint32_t erasesize; /* For this region */ uint32_t numblocks; /* Number of blocks in this region */ uint32_t regionindex;};#define MEMGETINFO _IOR('M', 1, struct mtd_info_user)#define MEMERASE _IOW('M', 2, struct erase_info_user)#define MEMWRITEOOB _IOWR('M', 3, struct mtd_oob_buf)#define MEMREADOOB _IOWR('M', 4, struct mtd_oob_buf)#define MEMLOCK _IOW('M', 5, struct erase_info_user)#define MEMUNLOCK _IOW('M', 6, struct erase_info_user)#define MEMGETREGIONCOUNT _IOR('M', 7, int)#define MEMGETREGIONINFO _IOWR('M', 8, struct region_info_user)#define MEMSETOOBSEL _IOW('M', 9, struct nand_oobinfo)#define MEMGETOOBSEL _IOR('M', 10, struct nand_oobinfo)#define MEMGETBADBLOCK _IOW('M', 11, loff_t)#define MEMSETBADBLOCK _IOW('M', 12, loff_t)struct nand_oobinfo { uint32_t useecc; uint32_t eccbytes; uint32_t oobfree[8][2]; uint32_t eccpos[32];};#endif /* __MTD_ABI_H__ */
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