mosfet.txt

微电子方面

TITLE  ***  SRT SENSOR SIMULATION , 10 micron (thick)***
TITLE  ***  Dn+=4um, Dall=10um, L=100um, W=100um, N=4E+14, N+=1E+18(ERFC)

MESH    REC     NX=24     NY=15  SMOOTH=1  OUTF=SEN_TEST.MES
X.MESH  N=1     LOC=0
X.MESH  N=24    LOC=3

Y.MESH  N=1     LOC=-0.125
Y.MESH  N=3    LOC=0
Y.MESH  N=11    LOC=1.0
Y.MESH  N=15    LOC=2.0

ELIMIN  COLUMNS Y.MIN=1.1

SPREAD  LEFT    WIDTH=.625 UP=1 LO=3 THICK=.1 ENC=2
SPREAD  RIGHT   WIDTH=.625 UP=1 LO=3 THICK=.1 ENC=2

REGION  NUM=1 SILICON
REGION  NUM=2 OXIDE     IY.MAX=3

ELECTR  NUM=1 X.MIN=.625 X.MAX=2.375 TOP
ELECTR  NUM=2 BOTTOM
ELECTR  NUM=3 X.MAX=0.5 IY.MAX=3
ELECTR  NUM=4 X.MIN=2.5 IY.MAX=3

DOPING  P.TYPE  CONC=3E15  UNIFORM OUT.FILE=MDEX1DS
DOPING  P.TYPE  CONC=2E16  Y.CHAR=.25
DOPING  N.TYPE  CONC=2E20  Y.JUNC=.34  X.MIN=0.0  WIDTH=.5 XY.RAT=.75
DOPING  N.TYPE  CONC=2E20  Y.JUNC=.34  X.MIN=2.5  WIDTH=.5 XY.RAT=.75

INTERFACE  QF=1E10
PLOT.2D GRID  TITLE="EXAPLE 1-INITIAL GRID" FILL SCALE

REGRID  DOPING LOG IGNORE=2 RATIO=2 SMOOTH=1 IN.FILE=MDEX1DS
PLOT.2D  GRID TITLE="EXAPLE 1-DOPING REGRID"FILL SCALE

CONTACT  NUM=1 N.POLY
MODELS  CONMOB  FLDMOB  SRFMOB2

SYMB    CARRIERS=0
METHOD  ICCG DAMPED
SOLVE

REGRID  POTEN IGNORE=2 RATIO=.2 MAX=1 SMOOTH=1
+       INFILE=MDEX1DS OUTFILE=MDEX1MS
PLOT.2D GRID TITLE"EXAMPLE 1-POTENTIAL REGRID" FILL SCALE

SYMB    CARRIERS=0
SOLVE   OUTFILE=MDEX1S

PLOT.1D DOPING X.START=.25 X.END=.25 Y.START=0 Y.END=2
+       Y.LOG POINTS BOT=1E15 TOP=1E21 COLOR=2
+       TITLE="EXAMPLE 1-SOURCE IMPURITY PROFILE"
PLOT.1D DOPING X.START=1.5 X.END=1.5 Y.START=0 Y.END=2
+       Y.LOG POINTS BOT=1E15 TOP=1E17 COLOR=2
+       TITLE="EXAMPLE 1-GATE IMPURITY PROFILE"
PLOT.2D BOUND TITLE="EXAMPLE 1-IMPURITY CONTOURS" FILL SCALE

CONTOUR DOPING LOG MIN=16 MAX=20 DEL=.5 COLOR=2
CONTOUR DOPING LOG MIN=-16 MAX=-15 DEL=.5 COLOR=1 LINE=2

END