nand.h

umon bootloader source code, support mips cpu.

 * @read_word:		[REPLACEABLE] read one word from the chip
 * @write_word:		[REPLACEABLE] write one word to the chip
 * @write_buf:		[REPLACEABLE] write data from the buffer to the chip
 * @read_buf:		[REPLACEABLE] read data from the chip into the buffer
 * @verify_buf:		[REPLACEABLE] verify buffer contents against the chip data
 * @select_chip:	[REPLACEABLE] select chip nr
 * @block_bad:		[REPLACEABLE] check, if the block is bad
 * @block_markbad:	[REPLACEABLE] mark the block bad
 * @hwcontrol:		[BOARDSPECIFIC] hardwarespecific function for accesing control-lines
 * @dev_ready:		[BOARDSPECIFIC] hardwarespecific function for accesing device ready/busy line
 *			If set to NULL no access to ready/busy is available and the ready/busy information
 *			is read from the chip status register
 * @cmdfunc:		[REPLACEABLE] hardwarespecific function for writing commands to the chip
 * @waitfunc:		[REPLACEABLE] hardwarespecific function for wait on ready
 * @calculate_ecc: 	[REPLACEABLE] function for ecc calculation or readback from ecc hardware
 * @correct_data:	[REPLACEABLE] function for ecc correction, matching to ecc generator (sw/hw)
 * @enable_hwecc:	[BOARDSPECIFIC] function to enable (reset) hardware ecc generator. Must only
 *			be provided if a hardware ECC is available
 * @erase_cmd:		[INTERN] erase command write function, selectable due to AND support
 * @scan_bbt:		[REPLACEABLE] function to scan bad block table
 * @eccmode:		[BOARDSPECIFIC] mode of ecc, see defines 
 * @eccsize: 		[INTERN] databytes used per ecc-calculation
 * @eccbytes: 		[INTERN] number of ecc bytes per ecc-calculation step
 * @eccsteps:		[INTERN] number of ecc calculation steps per page
 * @chip_delay:		[BOARDSPECIFIC] chip dependent delay for transfering data from array to read regs (tR)
 * @chip_lock:		[INTERN] spinlock used to protect access to this structure and the chip
 * @wq:			[INTERN] wait queue to sleep on if a NAND operation is in progress
 * @state: 		[INTERN] the current state of the NAND device
 * @page_shift:		[INTERN] number of address bits in a page (column address bits)
 * @phys_erase_shift:	[INTERN] number of address bits in a physical eraseblock
 * @bbt_erase_shift:	[INTERN] number of address bits in a bbt entry
 * @chip_shift:		[INTERN] number of address bits in one chip
 * @data_buf:		[INTERN] internal buffer for one page + oob 
 * @oob_buf:		[INTERN] oob buffer for one eraseblock
 * @oobdirty:		[INTERN] indicates that oob_buf must be reinitialized
 * @data_poi:		[INTERN] pointer to a data buffer
 * @options:		[BOARDSPECIFIC] various chip options. They can partly be set to inform nand_scan about
 *			special functionality. See the defines for further explanation
 * @badblockpos:	[INTERN] position of the bad block marker in the oob area
 * @numchips:		[INTERN] number of physical chips
 * @chipsize:		[INTERN] the size of one chip for multichip arrays
 * @pagemask:		[INTERN] page number mask = number of (pages / chip) - 1
 * @pagebuf:		[INTERN] holds the pagenumber which is currently in data_buf
 * @autooob:		[REPLACEABLE] the default (auto)placement scheme
 * @bbt:		[INTERN] bad block table pointer
 * @bbt_td:		[REPLACEABLE] bad block table descriptor for flash lookup
 * @bbt_md:		[REPLACEABLE] bad block table mirror descriptor
 * @badblock_pattern:	[REPLACEABLE] bad block scan pattern used for initial bad block scan 
 * @controller:		[OPTIONAL] a pointer to a hardware controller structure which is shared among multiple independend devices
 * @priv:		[OPTIONAL] pointer to private chip date
 */
 
struct nand_chip {
	void  __iomem	*IO_ADDR_R;
	void  __iomem 	*IO_ADDR_W;
	
	u_char		(*read_byte)(struct mtd_info *mtd);
	void		(*write_byte)(struct mtd_info *mtd, u_char byte);
	u16		(*read_word)(struct mtd_info *mtd);
	void		(*write_word)(struct mtd_info *mtd, u16 word);
	
	void		(*write_buf)(struct mtd_info *mtd, const u_char *buf, int len);
	void		(*read_buf)(struct mtd_info *mtd, u_char *buf, int len);
	int		(*verify_buf)(struct mtd_info *mtd, const u_char *buf, int len);
	void		(*select_chip)(struct mtd_info *mtd, int chip);
	int		(*block_bad)(struct mtd_info *mtd, loff_t ofs, int getchip);
	int		(*block_markbad)(struct mtd_info *mtd, loff_t ofs);
	void 		(*hwcontrol)(struct mtd_info *mtd, int cmd);
	int  		(*dev_ready)(struct mtd_info *mtd);
	void 		(*cmdfunc)(struct mtd_info *mtd, unsigned command, int column, int page_addr);
	int 		(*waitfunc)(struct mtd_info *mtd, struct nand_chip *this, int state);
	int		(*calculate_ecc)(struct mtd_info *mtd, const u_char *dat, u_char *ecc_code);
	int 		(*correct_data)(struct mtd_info *mtd, u_char *dat, u_char *read_ecc, u_char *calc_ecc);
	void		(*enable_hwecc)(struct mtd_info *mtd, int mode);
	void		(*erase_cmd)(struct mtd_info *mtd, int page);
	int		(*scan_bbt)(struct mtd_info *mtd);
	int		eccmode;
	int		eccsize;
	int		eccbytes;
	int		eccsteps;
	int 		chip_delay;
	spinlock_t	chip_lock;
	wait_queue_head_t wq;
	nand_state_t 	state;
	int 		page_shift;
	int		phys_erase_shift;
	int		bbt_erase_shift;
	int		chip_shift;
	u_char 		*data_buf;
	u_char		*oob_buf;
	int		oobdirty;
	u_char		*data_poi;
	unsigned int	options;
	int		badblockpos;
	int		numchips;
	unsigned long	chipsize;
	int		pagemask;
	int		pagebuf;
	struct nand_oobinfo	*autooob;
	uint8_t		*bbt;
	struct nand_bbt_descr	*bbt_td;
	struct nand_bbt_descr	*bbt_md;
	struct nand_bbt_descr	*badblock_pattern;
	struct nand_hw_control  *controller;
	void		*priv;
};

/*
 * NAND Flash Manufacturer ID Codes
 */
#define NAND_MFR_TOSHIBA	0x98
#define NAND_MFR_SAMSUNG	0xec
#define NAND_MFR_FUJITSU	0x04
#define NAND_MFR_NATIONAL	0x8f
#define NAND_MFR_RENESAS	0x07
#define NAND_MFR_STMICRO	0x20

/**
 * struct nand_flash_dev - NAND Flash Device ID Structure
 *
 * @name:  	Identify the device type
 * @id:   	device ID code
 * @pagesize:  	Pagesize in bytes. Either 256 or 512 or 0
 *		If the pagesize is 0, then the real pagesize 
 *		and the eraseize are determined from the
 *		extended id bytes in the chip
 * @erasesize: 	Size of an erase block in the flash device.
 * @chipsize:  	Total chipsize in Mega Bytes
 * @options:	Bitfield to store chip relevant options
 */
struct nand_flash_dev {
	char *name;
	int id;
	unsigned long pagesize;
	unsigned long chipsize;
	unsigned long erasesize;
	unsigned long options;
};

/**
 * struct nand_manufacturers - NAND Flash Manufacturer ID Structure
 * @name:	Manufacturer name
 * @id: 	manufacturer ID code of device.
*/
struct nand_manufacturers {
	int id;
	char * name;
};

extern struct nand_flash_dev nand_flash_ids[];
extern struct nand_manufacturers nand_manuf_ids[];

/** 
 * struct nand_bbt_descr - bad block table descriptor
 * @options:	options for this descriptor
 * @pages:	the page(s) where we find the bbt, used with option BBT_ABSPAGE
 *		when bbt is searched, then we store the found bbts pages here.
 *		Its an array and supports up to 8 chips now
 * @offs:	offset of the pattern in the oob area of the page
 * @veroffs:	offset of the bbt version counter in the oob are of the page
 * @version:	version read from the bbt page during scan
 * @len:	length of the pattern, if 0 no pattern check is performed
 * @maxblocks:	maximum number of blocks to search for a bbt. This number of
 *		blocks is reserved at the end of the device where the tables are 
 *		written.
 * @reserved_block_code: if non-0, this pattern denotes a reserved (rather than
 *              bad) block in the stored bbt
 * @pattern:	pattern to identify bad block table or factory marked good / 
 *		bad blocks, can be NULL, if len = 0
 *
 * Descriptor for the bad block table marker and the descriptor for the 
 * pattern which identifies good and bad blocks. The assumption is made
 * that the pattern and the version count are always located in the oob area
 * of the first block.
 */
struct nand_bbt_descr {
	int	options;
	int	pages[NAND_MAX_CHIPS];
	int	offs;
	int	veroffs;
	uint8_t	version[NAND_MAX_CHIPS];
	int	len;
	int 	maxblocks;
	int	reserved_block_code;
	uint8_t	*pattern;
};

/* Options for the bad block table descriptors */

/* The number of bits used per block in the bbt on the device */
#define NAND_BBT_NRBITS_MSK	0x0000000F
#define NAND_BBT_1BIT		0x00000001
#define NAND_BBT_2BIT		0x00000002
#define NAND_BBT_4BIT		0x00000004
#define NAND_BBT_8BIT		0x00000008
/* The bad block table is in the last good block of the device */
#define	NAND_BBT_LASTBLOCK	0x00000010
/* The bbt is at the given page, else we must scan for the bbt */
#define NAND_BBT_ABSPAGE	0x00000020
/* The bbt is at the given page, else we must scan for the bbt */
#define NAND_BBT_SEARCH		0x00000040
/* bbt is stored per chip on multichip devices */
#define NAND_BBT_PERCHIP	0x00000080
/* bbt has a version counter at offset veroffs */
#define NAND_BBT_VERSION	0x00000100
/* Create a bbt if none axists */
#define NAND_BBT_CREATE		0x00000200
/* Search good / bad pattern through all pages of a block */
#define NAND_BBT_SCANALLPAGES	0x00000400
/* Scan block empty during good / bad block scan */
#define NAND_BBT_SCANEMPTY	0x00000800
/* Write bbt if neccecary */
#define NAND_BBT_WRITE		0x00001000
/* Read and write back block contents when writing bbt */
#define NAND_BBT_SAVECONTENT	0x00002000
/* Search good / bad pattern on the first and the second page */
#define NAND_BBT_SCAN2NDPAGE	0x00004000

/* The maximum number of blocks to scan for a bbt */
#define NAND_BBT_SCAN_MAXBLOCKS	4

extern int nand_scan_bbt (struct mtd_info *mtd, struct nand_bbt_descr *bd);
extern int nand_update_bbt (struct mtd_info *mtd, loff_t offs);
extern int nand_default_bbt (struct mtd_info *mtd);
extern int nand_isbad_bbt (struct mtd_info *mtd, loff_t offs, int allowbbt);
extern int nand_erase_nand (struct mtd_info *mtd, struct erase_info *instr, int allowbbt);

/*
* Constants for oob configuration
*/
#define NAND_SMALL_BADBLOCK_POS		5
#define NAND_LARGE_BADBLOCK_POS		0

#endif /* __LINUX_MTD_NAND_H */