structure.h

来自「c++分析隧道再生大功率激光器内的电流分布以及波导内的激光模式」· C头文件 代码 · 共 51 行

//  This file used to give the structfor device.
//
struct width
{
	double ab;			//width of ohmic contact
	double ac;			// width of device
	double bb;			// height of the mesh

};

struct clad				// AlGaAs cladding layer
{   
	double thick;		// thickness of the layer
	double N;			// dopant concentration of the layer
	double x;			// Al mole fraction of the layer
    double ni;          // intrinsic carrier concentration
};

struct well				// InGaAs quantum well
{   
	double x;			// In mole fraction
	double lz;			// well width
	double ni;          // intrinsic carrier concentration in quantum well
};

struct source				// structinformation for source region
{   
	struct clad P_clad;		// P cladding layer
	struct well quantum;	// quantum well region
	struct clad N_clad;		// N cladding layer
	int j;					// net node number between P cladding layer and quantum well
};
	    
struct tunnel				// parameters for tunnel junction
{
	double Nd;		        // donor concentration in N region
	double Na;			    // acceptor concentration in P region
	double d_n;             // thickness of N region
	double d_p;             // thickness of P region
	double Jp;              // peak current density of the tunnel junction
	double Vp;              // voltage relative to Jp
	int j;                  // net node number between N cladding layer and tunnel junction
};

struct bias                 // external voltage bias
{
	double min;			    // minimum voltage
	double max;			   // maximum voltage
	double step;			// voltage step
};