📄 mtd-abi.h
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/* * $Id: mtd-abi.h,v 1.5 2004/06/22 09:29:35 gleixner Exp $ * * Portions of MTD ABI definition which are shared by kernel and user space */#ifndef __MTD_ABI_H__#define __MTD_ABI_H__struct erase_info_user { uint32_t start; uint32_t length;};struct mtd_oob_buf { uint32_t start; uint32_t length; unsigned char __user *ptr;};#define MTD_ABSENT 0#define MTD_RAM 1#define MTD_ROM 2#define MTD_NORFLASH 3#define MTD_NANDFLASH 4#define MTD_PEROM 5#define MTD_OTHER 14#define MTD_UNKNOWN 15#define MTD_CLEAR_BITS 1 // Bits can be cleared (flash)#define MTD_SET_BITS 2 // Bits can be set#define MTD_ERASEABLE 4 // Has an erase function#define MTD_WRITEB_WRITEABLE 8 // Direct IO is possible#define MTD_VOLATILE 16 // Set for RAMs#define MTD_XIP 32 // eXecute-In-Place possible#define MTD_OOB 64 // Out-of-band data (NAND flash)#define MTD_ECC 128 // Device capable of automatic ECC// Some common devices / combinations of capabilities#define MTD_CAP_ROM 0#define MTD_CAP_RAM (MTD_CLEAR_BITS|MTD_SET_BITS|MTD_WRITEB_WRITEABLE)#define MTD_CAP_NORFLASH (MTD_CLEAR_BITS|MTD_ERASEABLE)#define MTD_CAP_NANDFLASH (MTD_CLEAR_BITS|MTD_ERASEABLE|MTD_OOB)#define MTD_WRITEABLE (MTD_CLEAR_BITS|MTD_SET_BITS)// Types of automatic ECC/Checksum available#define MTD_ECC_NONE 0 // No automatic ECC available#define MTD_ECC_RS_DiskOnChip 1 // Automatic ECC on DiskOnChip#define MTD_ECC_SW 2 // SW ECC for Toshiba & Samsung devices/* ECC byte placement */#define MTD_NANDECC_OFF 0 // Switch off ECC (Not recommended)#define MTD_NANDECC_PLACE 1 // Use the given placement in the structure (YAFFS1 legacy mode)#define MTD_NANDECC_AUTOPLACE 2 // Use the default placement scheme#define MTD_NANDECC_PLACEONLY 3 // Use the given placement in the structure (Do not store ecc result on read)struct mtd_info_user { uint8_t type; uint32_t flags; uint32_t size; // Total size of the MTD uint32_t erasesize; uint32_t oobblock; // Size of OOB blocks (e.g. 512) uint32_t oobsize; // Amount of OOB data per block (e.g. 16) uint32_t ecctype; uint32_t eccsize;};struct region_info_user { uint32_t offset; /* At which this region starts, * from the beginning of the MTD */ uint32_t erasesize; /* For this region */ uint32_t numblocks; /* Number of blocks in this region */ uint32_t regionindex;};#define MEMGETINFO _IOR('M', 1, struct mtd_info_user)#define MEMERASE _IOW('M', 2, struct erase_info_user)#define MEMWRITEOOB _IOWR('M', 3, struct mtd_oob_buf)#define MEMREADOOB _IOWR('M', 4, struct mtd_oob_buf)#define MEMLOCK _IOW('M', 5, struct erase_info_user)#define MEMUNLOCK _IOW('M', 6, struct erase_info_user)#define MEMGETREGIONCOUNT _IOR('M', 7, int)#define MEMGETREGIONINFO _IOWR('M', 8, struct region_info_user)#define MEMSETOOBSEL _IOW('M', 9, struct nand_oobinfo)#define MEMGETOOBSEL _IOR('M', 10, struct nand_oobinfo)#define MEMGETBADBLOCK _IOW('M', 11, loff_t)#define MEMSETBADBLOCK _IOW('M', 12, loff_t)struct nand_oobinfo { uint32_t useecc; uint32_t eccbytes; uint32_t oobfree[8][2]; uint32_t eccpos[32];};#endif /* __MTD_ABI_H__ */
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