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6.12 <A NAME="30262">
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References</H1>
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Page numbers in brackets after a reference indicate its location in the chapter body.</P>
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[JEDEC I/O] [<A HREF="CH06.3.htm#JEDEC I/O" CLASS="XRef">
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] In numerical (not chronological) order the relevant JEDEC standards for I/O are:</P>
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JESD8-A. Interface Standard for Nominal 3 V/3.3 V Supply Digital Integrated Circuits (June 1994). This standard replaces JEDEC Standards 8, 8-1, and 8-1-A and defines the DC interface parameters for digital circuits operating from a power supply of nominal 3 V/3.3 V. </P>
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JESD8-2. Standard for Operating Voltages and Interface Levels for Low Voltage Emitter-Coupled Logic (ECL) Integrated Circuits (March 1993). Describes 300K ECL (voltage and temperature compensated, with threshold levels compatible with 100K ECL). </P>
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JESD8-3. Gunning Transceiver Logic (GTL) Low-Level, High-Speed Interface Standard for Digital Integrated Circuits (Nov. 1993). Defines the DC input and output specifications for a low-level, high-speed interface for integrated circuits. </P>
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JESD8-4. Center-Tap-Terminated (CTT) Low-Level, High-Speed Interface Standard for Digital Integrated Circuits (Nov. 1993). Defines the DC I/O specifications for a low-level, high-speed interface for integrated circuits that can be a superset of LVCMOS and LVTTL. </P>
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JESD8-5. 2.5 V +/– 0.2 V (Normal Range), and 1.8 V–2.7 V (Wide Range) Power Supply Voltage and Interface Standard for Nonterminated Digital Integrated Circuit (Oct. 1995). Defines power supply voltage ranges, DC interface parameters for a high-speed, low-voltage family of nonterminated digital circuits. </P>
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JESD8-6. High Speed Transceiver Logic (HSTL): A 1.5 V Output Buffer Supply Voltage Based Interface Standard for Digital Integrated Circuits (Aug. 1995). Describes a 1.5 V high-performance CMOS interface suitable for high I/O count CMOS and BiCMOS devices operating at over 200 MHz. </P>
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JESD12-6. Interface Standard for Semicustom Integrated Circuits (March 1991). Defines logic interface levels for CMOS, TTL, and ECL inputs and outputs for 5 V operation. </P>
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[JEDEC ESD, ANSI/IEEE ESD] The JEDEC and IEEE standards for ESD are:</P>
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JESD22-C101. Field Induced Charged Device Model Test Method for Electrostatic Discharge Withstand Thresholds of Microelectronic Components (May 1995). Describes Charged Device Model that simulates charging/discharging events that occur in production equipment and processes. Potential for CDM ESD events occur with metal-to-metal contact in manufacturing. </P>
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ANSI/EOS/ESD S5.1-1993. Electrostatic Discharge (ESD) Sensitivity Testing, Human Body Model (HBM), Component Level.</P>
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ANSI/IEEE C62.47-1992. Guide on Electrostatic Discharge (ESD): Characterization of the ESD Environment. </P>
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ANSI/IEEE 1181-1991. Latchup Test Methods for CMOS and BiCMOS Integrated Circuit Process Characterization.</P>
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PCI Local Bus Specification, Revision 2.1, June 1, 1995. Available from PCI Special Interest Group, PO Box 14070, Portland OR 97214. (800) 433-5177 (U.S.), (503)797-4207 (International). 282 p. Detailed description of the electrical and mechanical requirements for the PCI Bus written for engineers who already understand the basic operation of the bus protocol. [<A HREF="CH06.2.htm#[PCI, 1995]" CLASS="XRef">
reference location</A>
]</P>
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Wakerly, J. F. 1994. <SPAN CLASS="BookTitle">
Digital Design: Principles and Practices.</SPAN>
2nd ed. Englewood Cliffs, NJ: Prentice-Hall, 840 p. ISBN 0-13-211459-3. TK7874.65.W34. [<A HREF="CH06.b.htm#Wakerly誷 [1994]" CLASS="XRef">
reference location</A>
]</P>
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