stm32f2xx_flash.c

STM32+Grlib

  {
    tmp_psize = FLASH_PSIZE_HALF_WORD;
  }
  else if(VoltageRange == VoltageRange_3)
  {
    tmp_psize = FLASH_PSIZE_WORD;
  }
  else
  {
    tmp_psize = FLASH_PSIZE_DOUBLE_WORD;
  }
  /* Wait for last operation to be completed */
  status = FLASH_WaitForLastOperation();
  
  if(status == FLASH_COMPLETE)
  { 
    /* if the previous operation is completed, proceed to erase the sector */
    FLASH->CR &= CR_PSIZE_MASK;
    FLASH->CR |= tmp_psize;
    FLASH->CR &= SECTOR_MASK;
    FLASH->CR |= FLASH_CR_SER | FLASH_Sector;
    FLASH->CR |= FLASH_CR_STRT;
    
    /* Wait for last operation to be completed */
    status = FLASH_WaitForLastOperation();
    
    /* if the erase operation is completed, disable the SER Bit */
    FLASH->CR &= (~FLASH_CR_SER);
    FLASH->CR &= SECTOR_MASK; 
  }
  /* Return the Erase Status */
  return status;
}

/**
  * @brief  Erases all FLASH Sectors.
  *    
  * @param  VoltageRange: The device voltage range which defines the erase parallelism.  
  *          This parameter can be one of the following values:
  *            @arg VoltageRange_1: when the device voltage range is 1.8V to 2.1V, 
  *                                  the operation will be done by byte (8-bit) 
  *            @arg VoltageRange_2: when the device voltage range is 2.1V to 2.7V,
  *                                  the operation will be done by half word (16-bit)
  *            @arg VoltageRange_3: when the device voltage range is 2.7V to 3.6V,
  *                                  the operation will be done by word (32-bit)
  *            @arg VoltageRange_4: when the device voltage range is 2.7V to 3.6V + External Vpp, 
  *                                  the operation will be done by double word (64-bit)
  *       
  * @retval FLASH Status: The returned value can be: FLASH_BUSY, FLASH_ERROR_PROGRAM,
  *                       FLASH_ERROR_WRP, FLASH_ERROR_OPERATION or FLASH_COMPLETE.
  */
FLASH_Status FLASH_EraseAllSectors(uint8_t VoltageRange)
{
  uint32_t tmp_psize = 0x0;
  FLASH_Status status = FLASH_COMPLETE;
  
  /* Wait for last operation to be completed */
  status = FLASH_WaitForLastOperation();
  assert_param(IS_VOLTAGERANGE(VoltageRange));
  
  if(VoltageRange == VoltageRange_1)
  {
     tmp_psize = FLASH_PSIZE_BYTE;
  }
  else if(VoltageRange == VoltageRange_2)
  {
    tmp_psize = FLASH_PSIZE_HALF_WORD;
  }
  else if(VoltageRange == VoltageRange_3)
  {
    tmp_psize = FLASH_PSIZE_WORD;
  }
  else
  {
    tmp_psize = FLASH_PSIZE_DOUBLE_WORD;
  }  
  if(status == FLASH_COMPLETE)
  {
    /* if the previous operation is completed, proceed to erase all sectors */
     FLASH->CR &= CR_PSIZE_MASK;
     FLASH->CR |= tmp_psize;
     FLASH->CR |= FLASH_CR_MER;
     FLASH->CR |= FLASH_CR_STRT;
    
    /* Wait for last operation to be completed */
    status = FLASH_WaitForLastOperation();

    /* if the erase operation is completed, disable the MER Bit */
    FLASH->CR &= (~FLASH_CR_MER);

  }   
  /* Return the Erase Status */
  return status;
}

/**
  * @brief  Programs a double word (64-bit) at a specified address.
  * @note   This function must be used when the device voltage range is from
  *         2.7V to 3.6V and an External Vpp is present.           
  * @param  Address: specifies the address to be programmed.
  * @param  Data: specifies the data to be programmed.
  * @retval FLASH Status: The returned value can be: FLASH_BUSY, FLASH_ERROR_PROGRAM,
  *                       FLASH_ERROR_WRP, FLASH_ERROR_OPERATION or FLASH_COMPLETE.
  */
FLASH_Status FLASH_ProgramDoubleWord(uint32_t Address, uint64_t Data)
{
  FLASH_Status status = FLASH_COMPLETE;

  /* Check the parameters */
  assert_param(IS_FLASH_ADDRESS(Address));

  /* Wait for last operation to be completed */
  status = FLASH_WaitForLastOperation();
  
  if(status == FLASH_COMPLETE)
  {
    /* if the previous operation is completed, proceed to program the new data */
    FLASH->CR &= CR_PSIZE_MASK;
    FLASH->CR |= FLASH_PSIZE_DOUBLE_WORD;
    FLASH->CR |= FLASH_CR_PG;
  
    *(__IO uint64_t*)Address = Data;
        
    /* Wait for last operation to be completed */
    status = FLASH_WaitForLastOperation();

    /* if the program operation is completed, disable the PG Bit */
    FLASH->CR &= (~FLASH_CR_PG);
  } 
  /* Return the Program Status */
  return status;
}

/**
  * @brief  Programs a word (32-bit) at a specified address.
  * @param  Address: specifies the address to be programmed.
  *         This parameter can be any address in Program memory zone or in OTP zone.  
  * @note   This function must be used when the device voltage range is from 2.7V to 3.6V. 
  * @param  Data: specifies the data to be programmed.
  * @retval FLASH Status: The returned value can be: FLASH_BUSY, FLASH_ERROR_PROGRAM,
  *                       FLASH_ERROR_WRP, FLASH_ERROR_OPERATION or FLASH_COMPLETE.
  */
FLASH_Status FLASH_ProgramWord(uint32_t Address, uint32_t Data)
{
  FLASH_Status status = FLASH_COMPLETE;

  /* Check the parameters */
  assert_param(IS_FLASH_ADDRESS(Address));

  /* Wait for last operation to be completed */
  status = FLASH_WaitForLastOperation();
  
  if(status == FLASH_COMPLETE)
  {
    /* if the previous operation is completed, proceed to program the new data */
    FLASH->CR &= CR_PSIZE_MASK;
    FLASH->CR |= FLASH_PSIZE_WORD;
    FLASH->CR |= FLASH_CR_PG;
  
    *(__IO uint32_t*)Address = Data;
        
    /* Wait for last operation to be completed */
    status = FLASH_WaitForLastOperation();

    /* if the program operation is completed, disable the PG Bit */
    FLASH->CR &= (~FLASH_CR_PG);
  } 
  /* Return the Program Status */
  return status;
}

/**
  * @brief  Programs a half word (16-bit) at a specified address. 
  * @note   This function must be used when the device voltage range is from 2.1V to 3.6V.               
  * @param  Address: specifies the address to be programmed.
  *         This parameter can be any address in Program memory zone or in OTP zone.  
  * @param  Data: specifies the data to be programmed.
  * @retval FLASH Status: The returned value can be: FLASH_BUSY, FLASH_ERROR_PROGRAM,
  *                       FLASH_ERROR_WRP, FLASH_ERROR_OPERATION or FLASH_COMPLETE.
  */
FLASH_Status FLASH_ProgramHalfWord(uint32_t Address, uint16_t Data)
{
  FLASH_Status status = FLASH_COMPLETE;

  /* Check the parameters */
  assert_param(IS_FLASH_ADDRESS(Address));

  /* Wait for last operation to be completed */
  status = FLASH_WaitForLastOperation();
  
  if(status == FLASH_COMPLETE)
  {
    /* if the previous operation is completed, proceed to program the new data */
    FLASH->CR &= CR_PSIZE_MASK;
    FLASH->CR |= FLASH_PSIZE_HALF_WORD;
    FLASH->CR |= FLASH_CR_PG;
  
    *(__IO uint16_t*)Address = Data;
        
    /* Wait for last operation to be completed */
    status = FLASH_WaitForLastOperation();

    /* if the program operation is completed, disable the PG Bit */
    FLASH->CR &= (~FLASH_CR_PG);
  } 
  /* Return the Program Status */
  return status;
}

/**
  * @brief  Programs a byte (8-bit) at a specified address.
  * @note   This function can be used within all the device supply voltage ranges.               
  * @param  Address: specifies the address to be programmed.
  *         This parameter can be any address in Program memory zone or in OTP zone.  
  * @param  Data: specifies the data to be programmed.
  * @retval FLASH Status: The returned value can be: FLASH_BUSY, FLASH_ERROR_PROGRAM,
  *                       FLASH_ERROR_WRP, FLASH_ERROR_OPERATION or FLASH_COMPLETE.
  */
FLASH_Status FLASH_ProgramByte(uint32_t Address, uint8_t Data)
{
  FLASH_Status status = FLASH_COMPLETE;

  /* Check the parameters */
  assert_param(IS_FLASH_ADDRESS(Address));

  /* Wait for last operation to be completed */
  status = FLASH_WaitForLastOperation();
  
  if(status == FLASH_COMPLETE)
  {
    /* if the previous operation is completed, proceed to program the new data */
    FLASH->CR &= CR_PSIZE_MASK;
    FLASH->CR |= FLASH_PSIZE_BYTE;
    FLASH->CR |= FLASH_CR_PG;
  
    *(__IO uint8_t*)Address = Data;
        
    /* Wait for last operation to be completed */
    status = FLASH_WaitForLastOperation();

    /* if the program operation is completed, disable the PG Bit */
    FLASH->CR &= (~FLASH_CR_PG);
  } 

  /* Return the Program Status */
  return status;
}

/**
  * @}
  */

/** @defgroup FLASH_Group3 Option Bytes Programming functions
 *  @brief   Option Bytes Programming functions 
 *
@verbatim   
 ===============================================================================
                        Option Bytes Programming functions
 ===============================================================================  
 
   This group includes the following functions:
   - void FLASH_OB_Unlock(void)
   - void FLASH_OB_Lock(void)
   - void FLASH_OB_WRPConfig(uint32_t OB_WRP, FunctionalState NewState)
   - void FLASH_OB_RDPConfig(uint8_t OB_RDP)
   - void FLASH_OB_UserConfig(uint8_t OB_IWDG, uint8_t OB_STOP, uint8_t OB_STDBY)
   - void FLASH_OB_BORConfig(uint8_t OB_BOR)
   - FLASH_Status FLASH_ProgramOTP(uint32_t Address, uint32_t Data)							
   - FLASH_Status FLASH_OB_Launch(void)
   - uint32_t FLASH_OB_GetUser(void)						
   - uint8_t FLASH_OB_GetWRP(void)						
   - uint8_t FLASH_OB_GetRDP(void)							
   - uint8_t FLASH_OB_GetBOR(void)
   
   Any operation of erase or program should follow these steps:
   1. Call the FLASH_OB_Unlock() function to enable the FLASH option control register access

   2. Call one or several functions to program the desired Option Bytes:
      - void FLASH_OB_WRPConfig(uint32_t OB_WRP, FunctionalState NewState) => to Enable/Disable 
        the desired sector write protection
      - void FLASH_OB_RDPConfig(uint8_t OB_RDP) => to set the desired read Protection Level
      - void FLASH_OB_UserConfig(uint8_t OB_IWDG, uint8_t OB_STOP, uint8_t OB_STDBY) => to configure 
        the user Option Bytes.
      - void FLASH_OB_BORConfig(uint8_t OB_BOR) => to set the BOR Level 			 

   3. Once all needed Option Bytes to be programmed are correctly written, call the
      FLASH_OB_Launch() function to launch the Option Bytes programming process.
     
     @note When changing the IWDG mode from HW to SW or from SW to HW, a system 
           reset is needed to make the change effective.  

   4. Call the FLASH_OB_Lock() function to disable the FLASH option control register
      access (recommended to protect the Option Bytes against possible unwanted operations)
    
@endverbatim
  * @{
  */

/**
  * @brief  Unlocks the FLASH Option Control Registers access.
  * @param  None
  * @retval None
  */
void FLASH_OB_Unlock(void)
{
  if((FLASH->OPTCR & FLASH_OPTCR_OPTLOCK) != RESET)
  {
    /* Authorizes the Option Byte register programming */
    FLASH->OPTKEYR = FLASH_OPT_KEY1;
    FLASH->OPTKEYR = FLASH_OPT_KEY2;
  }  
}

/**
  * @brief  Locks the FLASH Option Control Registers access.
  * @param  None
  * @retval None
  */
void FLASH_OB_Lock(void)
{
  /* Set the OPTLOCK Bit to lock the FLASH Option Byte Registers access */
  FLASH->OPTCR |= FLASH_OPTCR_OPTLOCK;
}

/**
  * @brief  Enables or disables the write protection of the desired sectors
  * @param  OB_WRP: specifies the sector(s) to be write protected or unprotected.
  *          This parameter can be one of the following values:
  *            @arg OB_WRP: A value between OB_WRP_Sector0 and OB_WRP_Sector11                      
  *            @arg OB_WRP_Sector_All
  * @param  Newstate: new state of the Write Protection.
  *          This parameter can be: ENABLE or DISABLE.
  * @retval None  
  */
void FLASH_OB_WRPConfig(uint32_t OB_WRP, FunctionalState NewState)
{ 
  FLASH_Status status = FLASH_COMPLETE;
  
  /* Check the parameters */
  assert_param(IS_OB_WRP(OB_WRP));
  assert_param(IS_FUNCTIONAL_STATE(NewState));
    
  status = FLASH_WaitForLastOperation();

  if(status == FLASH_COMPLETE)
  { 
    if(NewState != DISABLE)
    {
      *(__IO uint16_t*)OPTCR_BYTE2_ADDRESS &= (~OB_WRP);
    }
    else
    {