📄 sc520_asm.s
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/*
* (C) Copyright 2002
* Daniel Engstr鰉, Omicron Ceti AB <daniel@omicron.se>.
*
* See file CREDITS for list of people who contributed to this
* project.
*
* This program is free software; you can redistribute it and/or
* modify it under the terms of the GNU General Public License as
* published by the Free Software Foundation; either version 2 of
* the License, or (at your option) any later version.
*
* This program is distributed in the hope that it will be useful,
* but WITHOUT ANY WARRANTY; without even the implied warranty of
* MERCHANTABILITY or FITNESS FOR A PARTICULAR PURPOSE. See the
* GNU General Public License for more details.
*
* You should have received a copy of the GNU General Public License
* along with this program; if not, write to the Free Software
* Foundation, Inc., 59 Temple Place, Suite 330, Boston,
* MA 02111-1307 USA
*/
/* This file is largely based on code obtned from AMD. AMD's original
* copyright is included below
*/
/*
* =============================================================================
*
* Copyright 1999 Advanced Micro Devices, Inc.
*
* This software is the property of Advanced Micro Devices, Inc (AMD) which
* specifically grants the user the right to modify, use and distribute this
* software provided this COPYRIGHT NOTICE is not removed or altered. All
* other rights are reserved by AMD.
*
* THE MATERIALS ARE PROVIDED "AS IS" WITHOUT ANY EXPRESS OR IMPLIED WARRANTY
* OF ANY KIND INCLUDING WARRANTIES OF MERCHANTABILITY, NONINFRINGEMENT OF
* THIRD-PARTY INTELLECTUAL PROPERTY, OR FITNESS FOR ANY PARTICULAR PURPOSE.
* IN NO EVENT SHALL AMD OR ITS SUPPLIERS BE LIABLE FOR ANY DAMAGES WHATSOEVER
* (INCLUDING, WITHOUT LIMITATION, DAMAGES FOR LOSS OF PROFITS, BUSINESS
* INTERRUPTION, LOSS OF INFORMAITON) ARISING OUT OF THE USE OF OR INABILITY
* TO USE THE MATERIALS, EVEN IF AMD HAS BEEN ADVISED OF THE POSSIBILITY OF
* SUCH DAMAGES. BECAUSE SOME JURSIDICTIONS PROHIBIT THE EXCLUSION OR
* LIMITATION OF LIABILITY FOR CONSEQUENTIAL OR INCIDENTAL DAMAGES, THE ABOVE
* LIMITATION MAY NOT APPLY TO YOU.
*
* AMD does not assume any responsibility for any errors that may appear in
* the Materials nor any responsibility to support or update the Materials.
* AMD retains the right to make changes to its test specifications at any
* time, without notice.
*
* So that all may benefit from your experience, please report any problems
* or suggestions about this software back to AMD. Please include your name,
* company, telephone number, AMD product requiring support and question or
* problem encountered.
*
* Advanced Micro Devices, Inc. Worldwide support and contact
* Embedded Processor Division information available at:
* Systems Engineering epd.support@amd.com
* 5204 E. Ben White Blvd. -or-
* Austin, TX 78741 http://www.amd.com/html/support/techsup.html
* ============================================================================
*/
/*******************************************************************************
* AUTHOR : Buddy Fey - Original.
*******************************************************************************
*/
/*******************************************************************************
* FUNCTIONAL DESCRIPTION:
* This routine is called to autodetect the geometry of the DRAM.
*
* This routine is called to determine the number of column bits for the DRAM
* devices in this external bank. This routine assumes that the external bank
* has been configured for an 11-bit column and for 4 internal banks. This gives
* us the maximum address reach in memory. By writing a test value to the max
* address and locating where it aliases to, we can determine the number of valid
* column bits.
*
* This routine is called to determine the number of internal banks each DRAM
* device has. The external bank (under test) is configured for maximum reach
* with 11-bit columns and 4 internal banks. This routine will write to a max
* address (BA1 and BA0 = 1) and then read from an address with BA1=0 to see if
* that column is a "don't care". If BA1 does not affect write/read of data,
* then this device has only 2 internal banks.
*
* This routine is called to determine the ending address for this external
* bank of SDRAM. We write to a max address with a data value and then disable
* row address bits looking for "don't care" locations. Each "don't care" bit
* represents a dividing of the maximum density (128M) by 2. By dividing the
* maximum of 32 4M chunks in an external bank down by all the "don't care" bits
* determined during sizing, we set the proper density.
*
* WARNINGS.
* bp must be preserved because it is used for return linkage.
*
* EXIT
* nothing returned - but the memory subsystem is enabled
*******************************************************************************
*/
#include <config.h>
#ifdef CONFIG_SC520
.section .text
.equ DRCCTL, 0x0fffef010 /* DRAM control register */
.equ DRCTMCTL, 0x0fffef012 /* DRAM timing control register */
.equ DRCCFG, 0x0fffef014 /* DRAM bank configuration register */
.equ DRCBENDADR, 0x0fffef018 /* DRAM bank ending address register */
.equ ECCCTL, 0x0fffef020 /* DRAM ECC control register */
.equ DBCTL, 0x0fffef040 /* DRAM buffer control register */
.equ CACHELINESZ, 0x00000010 /* size of our cache line (read buffer) */
.equ COL11_ADR, 0x0e001e00 /* 11 col addrs */
.equ COL10_ADR, 0x0e000e00 /* 10 col addrs */
.equ COL09_ADR, 0x0e000600 /* 9 col addrs */
.equ COL08_ADR, 0x0e000200 /* 8 col addrs */
.equ ROW14_ADR, 0x0f000000 /* 14 row addrs */
.equ ROW13_ADR, 0x07000000 /* 13 row addrs */
.equ ROW12_ADR, 0x03000000 /* 12 row addrs */
.equ ROW11_ADR, 0x01000000 /* 11 row addrs/also bank switch */
.equ ROW10_ADR, 0x00000000 /* 10 row addrs/also bank switch */
.equ COL11_DATA, 0x0b0b0b0b /* 11 col addrs */
.equ COL10_DATA, 0x0a0a0a0a /* 10 col data */
.equ COL09_DATA, 0x09090909 /* 9 col data */
.equ COL08_DATA, 0x08080808 /* 8 col data */
.equ ROW14_DATA, 0x3f3f3f3f /* 14 row data (MASK) */
.equ ROW13_DATA, 0x1f1f1f1f /* 13 row data (MASK) */
.equ ROW12_DATA, 0x0f0f0f0f /* 12 row data (MASK) */
.equ ROW11_DATA, 0x07070707 /* 11 row data/also bank switch (MASK) */
.equ ROW10_DATA, 0xaaaaaaaa /* 10 row data/also bank switch (MASK) */
/*
* initialize dram controller registers
*/
.globl mem_init
mem_init:
xorw %ax,%ax
movl $DBCTL, %edi
movb %al, (%edi) /* disable write buffer */
movl $ECCCTL, %edi
movb %al, (%edi) /* disable ECC */
movl $DRCTMCTL, %edi
movb $0x1E,%al /* Set SDRAM timing for slowest */
movb %al, (%edi)
/*
* setup loop to do 4 external banks starting with bank 3
*/
movl $0xff000000,%eax /* enable last bank and setup */
movl $DRCBENDADR, %edi /* ending address register */
movl %eax, (%edi)
movl $DRCCFG, %edi /* setup */
movw $0xbbbb,%ax /* dram config register for */
movw %ax, (%edi)
/*
* issue a NOP to all DRAMs
*/
movl $DRCCTL, %edi /* setup DRAM control register with */
movb $0x1,%al /* Disable refresh,disable write buffer */
movb %al, (%edi)
movl $CACHELINESZ, %esi /* just a dummy address to write for */
movw %ax, (%esi)
/*
* delay for 100 usec? 200?
* ******this is a cludge for now *************
*/
movw $100,%cx
sizdelay:
loop sizdelay /* we need 100 usec here */
/***********************************************/
/*
* issue all banks precharge
*/
movb $0x2,%al /* All banks precharge */
movb %al, (%edi)
movw %ax, (%esi)
/*
* issue 2 auto refreshes to all banks
*/
movb $0x4,%al /* Auto refresh cmd */
movb %al, (%edi)
movw $2,%cx
refresh1:
movw %ax, (%esi)
loop refresh1
/*
* issue LOAD MODE REGISTER command
*/
movb $0x3,%al /* Load mode register cmd */
movb %al, (%edi)
movw %ax, (%esi)
/*
* issue 8 more auto refreshes to all banks
*/
movb $0x4,%al /* Auto refresh cmd */
movb %al, (%edi)
movw $8,%cx
refresh2:
movw %ax, (%esi)
loop refresh2
/*
* set control register to NORMAL mode
*/
movb $0x0,%al /* Normal mode value */
movb %al, (%edi)
/*
* size dram starting with external bank 3 moving to external bank 0
*/
movl $0x3,%ecx /* start with external bank 3 */
nextbank:
/*
* write col 11 wrap adr
*/
movl $COL11_ADR, %esi /* set address to max col (11) wrap addr */
movl $COL11_DATA, %eax /* pattern for max supported columns(11) */
movl %eax, (%esi) /* write max col pattern at max col adr */
movl (%esi), %ebx /* optional read */
cmpl %ebx,%eax /* to verify write */
jnz bad_ram /* this ram is bad */
/*
* write col 10 wrap adr
*/
movl $COL10_ADR, %esi /* set address to 10 col wrap address */
movl $COL10_DATA, %eax /* pattern for 10 col wrap */
movl %eax, (%esi) /* write 10 col pattern @ 10 col wrap adr */
movl (%esi), %ebx /* optional read */
cmpl %ebx,%eax /* to verify write */
jnz bad_ram /* this ram is bad */
/*
* write col 9 wrap adr
*/
movl $COL09_ADR, %esi /* set address to 9 col wrap address */
movl $COL09_DATA, %eax /* pattern for 9 col wrap */
movl %eax, (%esi) /* write 9 col pattern @ 9 col wrap adr */
movl (%esi), %ebx /* optional read */
cmpl %ebx,%eax /* to verify write */
jnz bad_ram /* this ram is bad */
/*
* write col 8 wrap adr
*/
movl $COL08_ADR, %esi /* set address to min(8) col wrap address */
movl $COL08_DATA, %eax /* pattern for min (8) col wrap */
movl %eax, (%esi) /* write min col pattern @ min col adr */
movl (%esi), %ebx /* optional read */
cmpl %ebx,%eax /* to verify write */
jnz bad_ram /* this ram is bad */
/*
* write row 14 wrap adr
*/
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