mos3dset.c

linux平台下类似著名的电路板作图软件 Spice的源代码

                sqphbs = sqphis/(1.0+lvbs/
                    (here->MOS3tPhi+here->MOS3tPhi));
		EqualDeriv(&d_sqphbs,&d_q); d_sqphbs.value = lvbs;
		TimesDeriv(&d_sqphbs,&d_sqphbs,1/(here->MOS3tPhi+here->MOS3tPhi));
		d_sqphbs.value += 1.0;
		InvDeriv(&d_sqphbs,&d_sqphbs);
		TimesDeriv(&d_sqphbs,&d_sqphbs,sqphis);
                phibs = sqphbs*sqphbs;
		MultDeriv(&d_phibs,&d_sqphbs,&d_sqphbs);
            }
            /*
             *.....short channel effect factor
             */
            if ( (model->MOS3junctionDepth != 0.0) && 
                    (model->MOS3coeffDepLayWidth != 0.0) ) {
                wps = model->MOS3coeffDepLayWidth*sqphbs;
		TimesDeriv(&d_wps,&d_sqphbs,model->MOS3coeffDepLayWidth);
                oneoverxj = 1.0/model->MOS3junctionDepth;/*const*/
                xjonxl = model->MOS3junctionDepth*oneoverxl;/*const*/
                djonxj = model->MOS3latDiff*oneoverxj;/*const*/
                wponxj = wps*oneoverxj;
		TimesDeriv(&d_wponxj,&d_wps,oneoverxj);
                wconxj = coeff0+coeff1*wponxj+coeff2*wponxj*wponxj;
		TimesDeriv(&d_wconxj,&d_wponxj,coeff2);
		d_wconxj.value += coeff1;
		MultDeriv(&d_wconxj,&d_wconxj,&d_wponxj);
		d_wconxj.value += coeff0;
		arga = wconxj + djonxj;
		EqualDeriv(&d_arga,&d_wconxj); d_arga.value += djonxj;
                argc = wponxj/(1.0+wponxj);
		EqualDeriv(&d_argc,&d_wponxj);
		d_argc.value += 1.0;
		InvDeriv(&d_argc,&d_argc);
		MultDeriv(&d_argc,&d_argc,&d_wponxj);
                argb = sqrt(1.0-argc*argc);
		MultDeriv(&d_argb,&d_argc,&d_argc);
		TimesDeriv(&d_argb,&d_argb,-1.0);
		d_argb.value += 1.0;
		SqrtDeriv(&d_argb,&d_argb);

                fshort = 1.0-xjonxl*(arga*argb-djonxj);
		MultDeriv(&d_fshort,&d_arga,&d_argb);
		d_fshort.value -= djonxj;
		TimesDeriv(&d_fshort,&d_fshort,-xjonxl);
		d_fshort.value += 1.0;
            } else {
                fshort = 1.0;
		EqualDeriv(&d_fshort,&d_zero);
		d_fshort.value = 1.0;

            }
            /*
             *.....body effect
             */
            gammas = model->MOS3gamma*fshort;
	    TimesDeriv(&d_gammas,&d_fshort,model->MOS3gamma);
            fbodys = 0.5*gammas/(sqphbs+sqphbs);
	    DivDeriv(&d_fbodys,&d_gammas,&d_sqphbs);
	    TimesDeriv(&d_fbodys,&d_fbodys,0.25);
            fbody = fbodys+model->MOS3narrowFactor/here->MOS3w;
	    EqualDeriv(&d_fbody,&d_fbodys);
	    d_fbody.value += fbody - fbodys;

            onfbdy = 1.0/(1.0+fbody);
	    EqualDeriv(&d_onfbdy,&d_fbody);
	    d_onfbdy.value += 1.0;
	    InvDeriv(&d_onfbdy,&d_onfbdy);
            qbonco =gammas*sqphbs+model->MOS3narrowFactor*phibs/here->MOS3w;
	    EqualDeriv(&d_dummy,&d_phibs);
	    TimesDeriv(&d_dummy,&d_dummy,model->MOS3narrowFactor*here->MOS3w);
	    MultDeriv(&d_qbonco,&d_gammas,&d_sqphbs);
	    PlusDeriv(&d_qbonco,&d_qbonco,&d_dummy);
            /*
             *.....static feedback effect
             */
            vbix = here->MOS3tVbi*model->MOS3type-eta*(lvds);
	    EqualDeriv(&d_vbix,&d_r); d_vbix.value = vbix;
	    d_vbix.d1_r = -eta;
            /*
             *.....threshold voltage
             */
            vth = vbix+qbonco;
	    PlusDeriv(&d_vth,&d_vbix,&d_qbonco);
            /*
             *.....joint weak inversion and strong inversion
             */
            von = vth;
	    EqualDeriv(&d_von,&d_vth);
            if ( model->MOS3fastSurfaceStateDensity != 0.0 ) {
                csonco = CHARGE*model->MOS3fastSurfaceStateDensity * 
                    1e4 /*(cm**2/m**2)*/ *EffectiveLength*here->MOS3w/OxideCap;/*const*/
                cdonco = 0.5*qbonco/phibs;
		DivDeriv(&d_cdonco,&d_qbonco,&d_phibs);
		TimesDeriv(&d_cdonco,&d_cdonco,0.5);
                xn = 1.0+csonco+cdonco;
		EqualDeriv(&d_xn,&d_cdonco);
		d_xn.value += 1.0 + csonco;
                von = vth+vt*xn;
		TimesDeriv(&d_von,&d_xn,vt);
		PlusDeriv(&d_von,&d_von,&d_vth);


            } else {
                /*
                 *.....cutoff region
                 */
                if ( lvgs <= von ) {
                    cdrain = 0.0;
		    EqualDeriv(&d_cdrain,&d_zero);
                    goto innerline1000;
                }
            }
            /*
             *.....device is on
             */
            vgsx = MAX(lvgs,von);
if (lvgs >= von) {
EqualDeriv(&d_vgsx,&d_p);
d_vgsx.value = lvgs;
} else {
EqualDeriv(&d_vgsx,&d_von);
}
            /*
             *.....mobility modulation by gate voltage
             */
            onfg = 1.0+model->MOS3theta*(vgsx-vth);
	    TimesDeriv(&d_onfg,&d_vth,-1.0);
	    PlusDeriv(&d_onfg,&d_onfg,&d_vgsx);
	    TimesDeriv(&d_onfg,&d_onfg,model->MOS3theta);
	    d_onfg.value += 1.0;
            fgate = 1.0/onfg;
	    InvDeriv(&d_fgate,&d_onfg);
            us = here->MOS3tSurfMob * 1e-4 /*(m**2/cm**2)*/ *fgate;
	    TimesDeriv(&d_us,&d_fgate,here->MOS3tSurfMob * 1e-4);
            /*
             *.....saturation voltage
             */
            vdsat = (vgsx-vth)*onfbdy;
	    TimesDeriv(&d_vdsat,&d_vth, -1.0);
	    PlusDeriv(&d_vdsat,&d_vdsat,&d_vgsx);
	    MultDeriv(&d_vdsat,&d_vdsat,&d_onfbdy);
            if ( model->MOS3maxDriftVel <= 0.0 ) {
            } else {
                vdsc = EffectiveLength*model->MOS3maxDriftVel/us;
		InvDeriv(&d_vdsc,&d_us);
		TimesDeriv(&d_vdsc,&d_vdsc,EffectiveLength*model->MOS3maxDriftVel);
                onvdsc = 1.0/vdsc;
		InvDeriv(&d_onvdsc,&d_vdsc);
                arga = (vgsx-vth)*onfbdy;
		/* note arga = vdsat at this point */
		EqualDeriv(&d_arga,&d_vdsat);
                argb = sqrt(arga*arga+vdsc*vdsc);
		MultDeriv(&d_dummy,&d_arga,&d_arga);
		MultDeriv(&d_argb,&d_vdsc,&d_vdsc);
		PlusDeriv(&d_argb,&d_argb,&d_dummy);
		SqrtDeriv(&d_argb,&d_argb);
                vdsat = arga+vdsc-argb;
		TimesDeriv(&d_vdsat,&d_argb,-1.0);
		PlusDeriv(&d_vdsat,&d_vdsat,&d_vdsc);
		PlusDeriv(&d_vdsat,&d_vdsat,&d_arga);
            }
            /*
             *.....current factors in linear region
             */
            vdsx = MIN((lvds),vdsat);
if (lvds < vdsat) {
EqualDeriv(&d_vdsx,&d_r);
d_vdsx.value = lvds;
} else {
EqualDeriv(&d_vdsx,&d_vdsat);
}

            if ( vdsx == 0.0 ) goto line900;
            cdo = vgsx-vth-0.5*(1.0+fbody)*vdsx;
	    EqualDeriv(&d_cdo,&d_fbody);
	    d_cdo.value += 1.0;
	    MultDeriv(&d_cdo,&d_cdo,&d_vdsx);
	    TimesDeriv(&d_cdo,&d_cdo,0.5);
	    PlusDeriv(&d_cdo,&d_cdo,&d_vth);
	    TimesDeriv(&d_cdo,&d_cdo,-1.0);
	    PlusDeriv(&d_cdo,&d_cdo,&d_vgsx);


            /* 
             *.....normalized drain current
             */
            cdnorm = cdo*vdsx;
	    MultDeriv(&d_cdnorm,&d_cdo,&d_vdsx);
            /* 
             *.....drain current without velocity saturation effect
             */
/* Beta is a constant till now */
            Beta = Beta*fgate;
	    TimesDeriv(&d_Beta,&d_fgate,Beta);
            cdrain = Beta*cdnorm;
	    MultDeriv(&d_cdrain,&d_Beta,&d_cdnorm);
            /*
             *.....velocity saturation factor
             */
            if ( model->MOS3maxDriftVel != 0.0 ) {
                fdrain = 1.0/(1.0+vdsx*onvdsc);
		MultDeriv(&d_fdrain,&d_vdsx,&d_onvdsc);
		d_fdrain.value += 1.0;
		InvDeriv(&d_fdrain,&d_fdrain);
                /*
                 *.....drain current
                 */
	    cdrain = fdrain*cdrain;
	    MultDeriv(&d_cdrain,&d_cdrain,&d_fdrain);
	    Beta = Beta*fdrain;
	    MultDeriv(&d_Beta,&d_Beta,&d_fdrain);
		
            }
            /*
             *.....channel length modulation
             */
            if ( (lvds) <= vdsat ) goto line700;
            if ( model->MOS3maxDriftVel == 0.0 ) goto line510;
            if (model->MOS3alpha == 0.0) goto line700;
            cdsat = cdrain;
	    EqualDeriv(&d_cdsat,&d_cdrain);
            gdsat = cdsat*(1.0-fdrain)*onvdsc;
	    TimesDeriv(&d_dummy,&d_fdrain,-1.0);
	    d_dummy.value += 1.0;
	    MultDeriv(&d_gdsat,&d_cdsat,&d_dummy);
	    MultDeriv(&d_gdsat,&d_gdsat,&d_onvdsc);
            gdsat = MAX(1.0e-12,gdsat);
	    if (gdsat == 1.0e-12) {
		EqualDeriv(&d_gdsat,&d_zero);
		d_gdsat.value = gdsat;
		}

            emax = cdsat*oneoverxl/gdsat;
	    DivDeriv(&d_emax,&d_cdsat,&d_gdsat);
	    TimesDeriv(&d_emax,&d_emax,oneoverxl);


            arga = 0.5*emax*model->MOS3alpha;
	    TimesDeriv(&d_arga,&d_emax,0.5*model->MOS3alpha);
            argc = model->MOS3kappa*model->MOS3alpha;/*const*/
            argb = sqrt(arga*arga+argc*((lvds)-vdsat));
	    TimesDeriv(&d_dummy,&d_vdsat,-1.0);
	    d_dummy.value += lvds;
	    d_dummy.d1_r += 1.0;
	    TimesDeriv(&d_argb,&d_dummy,argc);
	    MultDeriv(&d_dummy,&d_arga,&d_arga);
	    PlusDeriv(&d_argb,&d_argb,&d_dummy);
	    SqrtDeriv(&d_argb,&d_argb);
            delxl = argb-arga;
	    TimesDeriv(&d_delxl,&d_arga,-1.0);
	    PlusDeriv(&d_delxl,&d_argb,&d_delxl);
            goto line520;
line510:
            delxl = sqrt(model->MOS3kappa*((lvds)-vdsat)*model->MOS3alpha);
	    TimesDeriv(&d_delxl,&d_vdsat,-1.0);
	    d_delxl.value += lvds;
	    d_delxl.d1_r += 1.0;
	    TimesDeriv(&d_delxl,&d_delxl,model->MOS3kappa*model->MOS3alpha);
	    SqrtDeriv(&d_delxl,&d_delxl);
	    
            /*
             *.....punch through approximation
             */
line520:
            if ( delxl > (0.5*EffectiveLength) ) {
	    delxl = EffectiveLength - (EffectiveLength*EffectiveLength/
		delxl*0.25);
	    InvDeriv(&d_delxl,&d_delxl);
	    TimesDeriv(&d_delxl,&d_delxl,-EffectiveLength*EffectiveLength*0.25);
	    d_delxl.value += EffectiveLength;
            }
            /*
             *.....saturation region
             */
            dlonxl = delxl*oneoverxl;
	    TimesDeriv(&d_dlonxl,&d_delxl,oneoverxl);
            xlfact = 1.0/(1.0-dlonxl);
	    TimesDeriv(&d_xlfact,&d_dlonxl,-1.0);
	    d_xlfact.value += 1.0;
	    InvDeriv(&d_xlfact,&d_xlfact);

            cdrain = cdrain*xlfact;
	    MultDeriv(&d_cdrain,&d_cdrain,&d_xlfact);
            /*
             *.....finish strong inversion case
             */
line700:
            if ( lvgs < von ) {
                /*
                 *.....weak inversion
                 */
                onxn = 1.0/xn;
		InvDeriv(&d_onxn,&d_xn);
		ondvt = onxn/vt;
		TimesDeriv(&d_ondvt,&d_onxn,1/vt);
                wfact = exp( (lvgs-von)*ondvt );
		TimesDeriv(&d_wfact,&d_von,-1.0);
		d_wfact.value += lvgs;
		d_wfact.d1_p += 1.0;
		MultDeriv(&d_wfact,&d_wfact,&d_ondvt);
		ExpDeriv(&d_wfact,&d_wfact);
                cdrain = cdrain*wfact;
		MultDeriv(&d_cdrain,&d_cdrain,&d_wfact);
            }
            /*
             *.....charge computation
             */
            goto innerline1000;
            /*
             *.....special case of vds = 0.0d0
             */

line900:
            Beta = Beta*fgate;
	    /* Beta is still a constant */
	    TimesDeriv(&d_Beta,&d_fgate,Beta);
            cdrain = 0.0;
	    EqualDeriv(&d_cdrain,&d_zero);
            here->MOS3gds = Beta*(vgsx-vth);
	    TimesDeriv(&d_MOS3gds,&d_vth,-1.0);
	    PlusDeriv(&d_MOS3gds,&d_MOS3gds,&d_vgsx);
	    MultDeriv(&d_MOS3gds,&d_MOS3gds,&d_Beta);
            if ( (model->MOS3fastSurfaceStateDensity != 0.0) && 
                    (lvgs < von) ) {
                here->MOS3gds *=exp((lvgs-von)/(vt*xn));