soi3temp.c

ngspice又一个电子CAD仿真软件代码.功能更全

            double czbd;    /* zero voltage bulk-drain capacitance */
            double czbs;    /* zero voltage bulk-source capacitance */
            double cj0;     /* default value of zero voltage bulk-source/drain capacitance*/
            double Nratio;  /* ratio of Nsub*Nplus/Nsub+Nplus */
            double arg;     /* 1 - fc */
            double sarg;    /* (1-fc) ^^ (-mj) */

            
	    if (here->SOI3owner != ARCHme)
                    continue;

            /* perform the parameter defaulting */
            
	    /* JimB - if device temperature not given, OR, if self-heating switched */
            /* on, then set device temperature equal to circuit temperature.  Can't */
            /* set device temp with self-heating on, otherwise get multiple thermal */
            /* ground nodes, but doesn't matter, since any sizeable thermal gradient*/
            /* across an IC circuit is probably due to self-heating anyway.         */
            if ( (!here->SOI3tempGiven) || (here->SOI3rt != 0) )
            {
               here->SOI3temp = ckt->CKTtemp;
            }
            vt = here->SOI3temp * CONSTKoverQ;
            ratio = here->SOI3temp/model->SOI3tnom;
            fact2 = here->SOI3temp/REFTEMP;
            kt = here->SOI3temp * CONSTboltz;
            egfet = 1.16-(7.02e-4*here->SOI3temp*here->SOI3temp)/
                    (here->SOI3temp+1108);
            if (!model->SOI3chidGiven)
            {
               model->SOI3chid = CHARGE*egfet/CONSTboltz;
            }
            if (!model->SOI3chid1Given)
            {
               model->SOI3chid1 = CHARGE*egfet/CONSTboltz;
            }
            arg = -egfet/(kt+kt)+1.1150877/(CONSTboltz*(REFTEMP+REFTEMP));
            pbfact = -2*vt *(1.5*log(fact2)+CHARGE*arg);

            if(!here->SOI3lGiven)
            {
               here->SOI3l = ckt->CKTdefaultMosL;
            }
            if(!here->SOI3wGiven)
            {
               here->SOI3w = ckt->CKTdefaultMosW;
            }

            if(here->SOI3l - 2 * model->SOI3latDiff <=0)
            {
					(*(SPfrontEnd->IFerror))(ERR_WARNING,
               	"%s: Effective channel length less than zero \nIncreasing \
                  this instance length by 2*LD to remove effect of LD",
                  &(here->SOI3name));
					here->SOI3l += 2*model->SOI3latDiff;
            }
            ratio4 =  exp(model->SOI3k*log(ratio)); /* ratio4 = (temp/tnom)^k */
                                                    /* i.e. mobilitites prop to */
                                                    /* T^-(k) where k=1.5 for old SPICE */
            here->SOI3tTransconductance = model->SOI3transconductance / ratio4;
            here->SOI3tSurfMob = model->SOI3surfaceMobility/ratio4;
            phio= (model->SOI3phi-pbfact1)/fact1; /* this is PHI @ REFTEMP */
            here->SOI3tPhi = fact2 * phio + pbfact;
            here->SOI3tVfbF = model->SOI3vfbF +
                  (model->SOI3type * model->SOI3gateType * 0.5*(egfet1-egfet)) +
                 (model->SOI3type * 0.5 * (model->SOI3phi - here->SOI3tPhi));
            here->SOI3tVfbB =  model->SOI3vfbB +
                                (1-model->SOI3type)*0.5*(here->SOI3tPhi-model->SOI3phi);

            here->SOI3tVto = here->SOI3tVfbF + model->SOI3type *
                    (model->SOI3gamma * sqrt(here->SOI3tPhi) + eta_s*here->SOI3tPhi);

            here->SOI3tSatCur = model->SOI3jctSatCur*
                    exp(-egfet/vt+egfet1/vtnom);
            here->SOI3tSatCur1 = model->SOI3jctSatCur1*
                    exp(-egfet/vt+egfet1/vtnom);
            here->SOI3tSatCurDens = model->SOI3jctSatCurDensity *
                    exp(-egfet/vt+egfet1/vtnom);
            here->SOI3tSatCurDens1 = model->SOI3jctSatCurDensity1 *
                    exp(-egfet/vt+egfet1/vtnom);

            pbo = (model->SOI3bulkJctPotential - pbfact1)/fact1;
            gmaold = (model->SOI3bulkJctPotential-pbo)/pbo;
            capfact = 1/(1+model->SOI3bulkJctSideGradingCoeff*
                    (4e-4*(model->SOI3tnom-REFTEMP)-gmaold));
            here->SOI3tCbd = model->SOI3capBD * capfact;
            here->SOI3tCbs = model->SOI3capBS * capfact;
            here->SOI3tCjsw = model->SOI3sideWallCapFactor * capfact;
            here->SOI3tBulkPot = fact2 * pbo+pbfact;
            gmanew = (here->SOI3tBulkPot-pbo)/pbo;
            capfact = (1+model->SOI3bulkJctSideGradingCoeff*
                    (4e-4*(here->SOI3temp-REFTEMP)-gmanew));
            here->SOI3tCbd *= capfact;
            here->SOI3tCbs *= capfact;
            here->SOI3tCjsw *= capfact;
            here->SOI3tDepCap = model->SOI3fwdCapDepCoeff * here->SOI3tBulkPot;

            if (here->SOI3tSatCurDens == 0)
            {
               if (here->SOI3tSatCur == 0)
               {
                  here->SOI3sourceVcrit = here->SOI3drainVcrit =
                          vt*log(vt/(CONSTroot2*1.0e-15));
               }
               else
               {
                  here->SOI3sourceVcrit = here->SOI3drainVcrit =
                          vt*log(vt/(CONSTroot2*here->SOI3tSatCur));
               }
            }
            else
            {
               here->SOI3drainVcrit =
                        vt * log( vt / (CONSTroot2 *
                        here->SOI3tSatCurDens * (here->SOI3w)));
               here->SOI3sourceVcrit =
                        vt * log( vt / (CONSTroot2 *
                        here->SOI3tSatCurDens * (here->SOI3w)));
            }

            if(model->SOI3capBDGiven)
            {
               czbd = here->SOI3tCbd;
            }
            else
            {
               if(model->SOI3sideWallCapFactorGiven)
               {
                  czbd = here->SOI3tCjsw * (here->SOI3w*model->SOI3bodyThickness);
               }
               /* JimB - 2/1/99.  Calculate default value for Cj0 */
               /* using PN junction theory. */
               else
               {
                  Nratio = (1e6*model->SOI3nplusDoping * model->SOI3substrateDoping)/
                           (model->SOI3nplusDoping + model->SOI3substrateDoping);
                  cj0 = sqrt((Nratio * 11.7 * 8.854214871e-12 * CHARGE)/
                             (2 * here->SOI3tBulkPot));

                  /* JimB - temperature dependence code */
            		gmaold = (model->SOI3bulkJctPotential-pbo)/pbo;
            		capfact = 1/(1+model->SOI3bulkJctSideGradingCoeff*
                    		(4e-4*(model->SOI3tnom-REFTEMP)-gmaold));
                  cj0 *= capfact;
            		gmanew = (here->SOI3tBulkPot-pbo)/pbo;
            		capfact = (1+model->SOI3bulkJctSideGradingCoeff*
                    		(4e-4*(here->SOI3temp-REFTEMP)-gmanew));
            		cj0 *= capfact;

                  czbd = cj0 * (here->SOI3w*model->SOI3bodyThickness);
               }
            }

            arg = 1-model->SOI3fwdCapDepCoeff;
            sarg = exp( (-model->SOI3bulkJctSideGradingCoeff) * log(arg) );
            here->SOI3Cbd = czbd;
            here->SOI3f2d = czbd*(1-model->SOI3fwdCapDepCoeff*
                        (1+model->SOI3bulkJctSideGradingCoeff))*
                        sarg/arg;
            here->SOI3f3d = czbd * model->SOI3bulkJctSideGradingCoeff * sarg/arg /
                        here->SOI3tBulkPot;
            here->SOI3f4d = czbd*here->SOI3tBulkPot*(1-arg*sarg)/
                        (1-model->SOI3bulkJctSideGradingCoeff)
                    -here->SOI3f3d/2*
                        (here->SOI3tDepCap*here->SOI3tDepCap)
                    -here->SOI3tDepCap * here->SOI3f2d;

            if(model->SOI3capBSGiven)
            {
               czbs=here->SOI3tCbs;
            }
            else
            {
               if(model->SOI3sideWallCapFactorGiven)
               {
                  czbs=here->SOI3tCjsw * (here->SOI3w*model->SOI3bodyThickness);
               }
               /* JimB - 2/1/99.  Calculate default value for Cj0 */
               /* using PN junction theory. */
               else
               {
                  Nratio = (1e6*model->SOI3nplusDoping * model->SOI3substrateDoping)/
                           (model->SOI3nplusDoping + model->SOI3substrateDoping);
                  cj0 = sqrt((Nratio * 11.7 * 8.854214871e-12 * CHARGE)/
                             (2 * here->SOI3tBulkPot));

                  /* JimB - temperature dependence code */
            		gmaold = (model->SOI3bulkJctPotential-pbo)/pbo;
            		capfact = 1/(1+model->SOI3bulkJctSideGradingCoeff*
                    		(4e-4*(model->SOI3tnom-REFTEMP)-gmaold));
                  cj0 *= capfact;
            		gmanew = (here->SOI3tBulkPot-pbo)/pbo;
            		capfact = (1+model->SOI3bulkJctSideGradingCoeff*
                    		(4e-4*(here->SOI3temp-REFTEMP)-gmanew));
            		cj0 *= capfact;

                  czbs = cj0 * (here->SOI3w*model->SOI3bodyThickness);
               }
            }
            arg = 1-model->SOI3fwdCapDepCoeff;
            sarg = exp( (-model->SOI3bulkJctSideGradingCoeff) * log(arg) );
            here->SOI3Cbs = czbs;
            here->SOI3f2s = czbs*(1-model->SOI3fwdCapDepCoeff*
                        (1+model->SOI3bulkJctSideGradingCoeff))*
                        sarg/arg;
            here->SOI3f3s = czbs * model->SOI3bulkJctSideGradingCoeff * sarg/arg /
                        here->SOI3tBulkPot;
            here->SOI3f4s = czbs*here->SOI3tBulkPot*(1-arg*sarg)/
                        (1-model->SOI3bulkJctSideGradingCoeff)
                    -here->SOI3f3s/2*
                        (here->SOI3tDepCap*here->SOI3tDepCap)
                    -here->SOI3tDepCap * here->SOI3f2s;

            if(model->SOI3drainResistanceGiven)
            {
               if(model->SOI3drainResistance != 0)
               {
                  here->SOI3drainConductance = 1/model->SOI3drainResistance;
               }
               else
               {
                  here->SOI3drainConductance = 0;
               }
            }
            else if (model->SOI3sheetResistanceGiven)
            {
               if(model->SOI3sheetResistance != 0)
               {
                  here->SOI3drainConductance =
                        1/(model->SOI3sheetResistance*here->SOI3drainSquares);
               }
               else
               {
                  here->SOI3drainConductance = 0;
               }
            }
            else if(model->SOI3rdwGiven)
            {
               if (model->SOI3rdw != 0)
               {
                	/* JimB - 1e6 multiplying factor converts W from m to microns */
                  here->SOI3drainConductance =
                    (here->SOI3w/model->SOI3rdw)*1e6;
               }
               else
               {
                  here->SOI3drainConductance = 0;
               }
            }
            else
            {
                here->SOI3drainConductance = 0;
            }
            
            if(model->SOI3sourceResistanceGiven)
            {
               if(model->SOI3sourceResistance != 0)
               {
                  here->SOI3sourceConductance = 1/model->SOI3sourceResistance;
               }
               else
               {
                  here->SOI3sourceConductance = 0;
               }
            }
            else if (model->SOI3sheetResistanceGiven)
            {
               if(model->SOI3sheetResistance != 0)
               {
                  here->SOI3sourceConductance =
                        1/(model->SOI3sheetResistance*here->SOI3sourceSquares);
               }
               else
               {
                  here->SOI3sourceConductance = 0;
               }
            }
            else if(model->SOI3rswGiven)
            {
               if (model->SOI3rsw != 0)
               {
                	/* JimB - 1e6 multiplying factor converts W from m to microns */
                  here->SOI3sourceConductance =
                    (here->SOI3w/model->SOI3rsw)*1e6;
               }
               else
               {
                  here->SOI3sourceConductance = 0;
               }
            }
            else
            {
               here->SOI3sourceConductance = 0;
            }
/* extra stuff for newer model - msll Jan96 */
        } /* finish looping through all instances of the model*/
    } /* finish looping through all the transistor models */
    return(OK);
}