soi3defs.h

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    double *SOI3TOUT_gfPtr;
    double *SOI3TOUT_gbPtr;
    double *SOI3TOUT_bPtr;
    double *SOI3TOUT_spPtr;

    double *SOI3GF_toutPtr;
    double *SOI3GB_toutPtr;
    double *SOI3DP_toutPtr;
    double *SOI3SP_toutPtr;
    
    double *SOI3TOUT_ibrPtr;  /* these are for zero voltage source should */
    double *SOI3IBR_toutPtr;  /* no thermal behaviour be specified */

    double *SOI3B_toutPtr;    /* for impact ionisation current source */

    double *SOI3TOUT_tout1Ptr;
    double *SOI3TOUT1_toutPtr;
    double *SOI3TOUT1_tout1Ptr;
    double *SOI3TOUT1_tout2Ptr;
    double *SOI3TOUT2_tout1Ptr;
    double *SOI3TOUT2_tout2Ptr;
    double *SOI3TOUT2_tout3Ptr;
    double *SOI3TOUT3_tout2Ptr;
    double *SOI3TOUT3_tout3Ptr;
    double *SOI3TOUT3_tout4Ptr;
    double *SOI3TOUT4_tout3Ptr;
    double *SOI3TOUT4_tout4Ptr;


/* indices to the array of SOI(3) noise sources */

#define SOI3RDNOIZ       0
#define SOI3RSNOIZ       1
#define SOI3IDNOIZ       2
#define SOI3FLNOIZ       3
#define SOI3TOTNOIZ      4

#define SOI3NSRCS     5     /* the number of SOI(3) noise sources */

#ifndef NONOISE
    double SOI3nVar[NSTATVARS][SOI3NSRCS];
#else /* NONOISE */
	double **SOI3nVar;
#endif /* NONOISE */

} SOI3instance ;

#define SOI3vbd  SOI3states+ 0   /* bulk-drain voltage */
#define SOI3vbs  SOI3states+ 1   /* bulk-source voltage */
#define SOI3vgfs SOI3states+ 2   /* front gate-source voltage */
#define SOI3vgbs SOI3states+ 3   /* back gate-source voltage */
#define SOI3vds  SOI3states+ 4   /* drain-source voltage */
#define SOI3deltaT SOI3states+ 5  /* final temperature difference */

#define SOI3qgf SOI3states + 6  /* front gate charge */
#define SOI3iqgf SOI3states +7  /* front gate current */

#define SOI3qgb SOI3states+  8  /* back gate charge */
#define SOI3iqgb SOI3states+ 9  /* back gate current */

#define SOI3qd SOI3states+  10 /* drain charge */
#define SOI3iqd SOI3states+ 11 /* drain current */

#define SOI3qs SOI3states+  14 /* body charge */
#define SOI3iqs SOI3states+ 15 /* body current */

#define SOI3cgfgf SOI3states+     16 
#define SOI3cgfd SOI3states+      17 
#define SOI3cgfs SOI3states+      18 
#define SOI3cgfdeltaT SOI3states+ 19
#define SOI3cgfgb SOI3states+     20 

#define SOI3cdgf SOI3states+      21
#define SOI3cdd SOI3states+       22
#define SOI3cds SOI3states+       23
#define SOI3cddeltaT SOI3states+  24
#define SOI3cdgb SOI3states+      25

#define SOI3csgf SOI3states+      26
#define SOI3csd SOI3states+       27
#define SOI3css SOI3states+       28
#define SOI3csdeltaT SOI3states+  29
#define SOI3csgb SOI3states+      30

#define SOI3cgbgf SOI3states +    31
#define SOI3cgbd SOI3states +     32
#define SOI3cgbs SOI3states +     33
#define SOI3cgbdeltaT SOI3states+ 34
#define SOI3cgbgb SOI3states +    35

#define SOI3qbd SOI3states+       36  /* body-drain capacitor charge */
#define SOI3iqbd SOI3states+      37  /* body-drain capacitor current */

#define SOI3qbs SOI3states+       38  /* body-source capacitor charge */
#define SOI3iqbs SOI3states+      39  /* body-source capacitor current */

#define SOI3qt SOI3states+        40      /* Energy or 'charge' associated with ct */
#define SOI3iqt SOI3states+       41      /* equiv current source for ct */
#define SOI3qt1 SOI3states+       42      /* Energy or 'charge' associated with ct */
#define SOI3iqt1 SOI3states+      43      /* equiv current source for ct */
#define SOI3qt2 SOI3states+       44      /* Energy or 'charge' associated with ct */
#define SOI3iqt2 SOI3states+      45      /* equiv current source for ct */
#define SOI3qt3 SOI3states+       46      /* Energy or 'charge' associated with ct */
#define SOI3iqt3 SOI3states+      47      /* equiv current source for ct */
#define SOI3qt4 SOI3states+       48      /* Energy or 'charge' associated with ct */
#define SOI3iqt4 SOI3states+      49      /* equiv current source for ct */

#define SOI3qBJTbs SOI3states+    50
#define SOI3iqBJTbs SOI3states+   51

#define SOI3qBJTbd SOI3states+    52
#define SOI3iqBJTbd SOI3states+   53

#define SOI3cBJTbsbs SOI3states+     54
#define SOI3cBJTbsdeltaT SOI3states+ 55

#define SOI3cBJTbdbd SOI3states+     56
#define SOI3cBJTbddeltaT SOI3states+ 57

#define SOI3idrain SOI3states+    58  /* final drain current at timepoint (no define) */

#define SOI3deltaT1 SOI3states+   59  /* final temperature difference */
#define SOI3deltaT2 SOI3states+   60  /* final temperature difference */
#define SOI3deltaT3 SOI3states+   61  /* final temperature difference */
#define SOI3deltaT4 SOI3states+   62  /* final temperature difference */
#define SOI3deltaT5 SOI3states+   63  /* final temperature difference */

#define SOI3numStates 64

/* per model data */

    /* NOTE:  parameters marked 'input - use xxxx' are paramters for
     * which a temperature correction is applied in SOI3temp, thus
     * the SOI3xxxx value in the per-instance structure should be used
     * instead in all calculations
     */


typedef struct sSOI3model {       /* model structure for an SOI3 MOSFET  */

    int SOI3modType;    /* type index to this device type */
    struct sSOI3model *SOI3nextModel;    /* pointer to next possible model
                                          *in linked list */
    SOI3instance * SOI3instances; /* pointer to list of instances
                                   * that have this model */
    IFuid SOI3modName;       /* pointer to character string naming this model */
    int SOI3type;       /* device type : 1 = nsoi,  -1 = psoi */
    double SOI3tnom;        /* temperature at which parameters measured */
    double SOI3latDiff;
    double SOI3jctSatCurDensity;    /* input - use tSatCurDens (jnct)*/
    double SOI3jctSatCurDensity1;    /* input - use tSatCurDens1 (jnct)*/
    double SOI3jctSatCur;   /* input - use tSatCur (jnct Is)*/
    double SOI3jctSatCur1;   /* input - use tSatCur1 (jnct Is)*/
    double SOI3drainResistance;
    double SOI3sourceResistance;
    double SOI3sheetResistance;
    double SOI3transconductance;    /* (KP) input - use tTransconductance */
    double SOI3frontGateSourceOverlapCapFactor;
    double SOI3frontGateDrainOverlapCapFactor;
    double SOI3frontGateBulkOverlapCapFactor;
    double SOI3backGateSourceOverlapCapAreaFactor;
    double SOI3backGateDrainOverlapCapAreaFactor;
    double SOI3backGateBulkOverlapCapAreaFactor;
    double SOI3frontOxideCapFactor; /* Cof   NO DEFINES      */
    double SOI3backOxideCapFactor;  /* Cob       OR          */
    double SOI3bodyCapFactor;       /* Cb       FLAGS        */
    double SOI3C_bb;                /* Cb in series with Cob */
    double SOI3C_fb;                /* Cb in series with Cof */
    double SOI3C_ssf;               /* q*NQFF */
    double SOI3C_ssb;               /* q*NQFB */
    double SOI3C_fac;		    /* C_ob/(C_ob+C_b+C_ssb) */
    double SOI3vt0;    /* input - use tVto */
    double SOI3vfbF;   /* flat-band voltage. input - use tVfbF */
    double SOI3vfbB;   /* back flat-band voltage. input - use tVfbB */
    double SOI3gamma;   /* gamma */
    double SOI3gammaB;   /* back gamma */
    double SOI3capBD;   /* input - use tCbd */
    double SOI3capBS;   /* input - use tCbs */
    double SOI3sideWallCapFactor;   /* input - use tCjsw */
    double SOI3bulkJctPotential;    /* input - use tBulkPot */
    double SOI3bulkJctSideGradingCoeff; /* MJSW */
    double SOI3fwdCapDepCoeff;          /* FC */
    double SOI3phi; /* input - use tPhi */
    double SOI3vbi; /* input - use tVbi */
    double SOI3lambda;
    double SOI3theta;
    double SOI3substrateDoping;          /* Nsub */
    double SOI3substrateCharge;          /* Qb  - no define/flag */
    int SOI3gateType;        /* +1=same, -1=different, 0=Al */
    double SOI3frontFixedChargeDensity;
    double SOI3backFixedChargeDensity;
    double SOI3frontSurfaceStateDensity;
    double SOI3backSurfaceStateDensity;
    double SOI3frontOxideThickness;
    double SOI3backOxideThickness;
    double SOI3bodyThickness;
    double SOI3surfaceMobility; /* input - use tSurfMob */
    double SOI3oxideThermalConductivity;
    double SOI3siliconSpecificHeat;
    double SOI3siliconDensity;
    double SOI3fNcoef;
    double SOI3fNexp;
/* new stuff for newer model - msll Jan96 */
    double SOI3sigma; /* DIBL factor */
    double SOI3chiFB;   /* temperature coeff of flatband voltage */
    double SOI3chiPHI;  /* temperature coeff of PHI */
    double SOI3deltaW; /* narrow width effect factor */
    double SOI3deltaL; /* short channel effect factor */
    double SOI3vsat;   /* input - saturation velocity, use tVsat */
    double SOI3TVF0;   /* internal use - precalculation of exp to save time */
    double SOI3k;      /* thermal exponent for mobility factor */
    double SOI3lx;     /* channel length modulation factor */
    double SOI3vp;     /* channel length modulation empirical voltage */
    double SOI3eta;    /* Imp. ion. field adjustment factor */
    double SOI3alpha0;   /* 1st impact ionisation coeff */
    double SOI3beta0;   /* 2nd impact ionisation coeff */
    double SOI3lm;     /* impact ion. drain region length cf LX */
    double SOI3lm1;    /* impact ion. drain region coeff */
    double SOI3lm2;    /* impact ion. drain region coeff */
    double SOI3etad;   /* diode ideality factor */
    double SOI3etad1;   /* 2nd diode ideality factor */
    double SOI3chibeta; /* temp coeff of BETA0 */
    double SOI3chid;    /* temp factor for junction 1 */
    double SOI3chid1;   /* temp factor for junction 2 */
    int    SOI3dvt;     /* switch for temp dependence of vt in diodes */
    int    SOI3nLev;    /* level switch for noise model */
    double SOI3betaBJT; /* beta for Eber Moll BJT model */
    double SOI3tauFBJT;   /* forward BJT transit time */
    double SOI3tauRBJT;   /* reverse BJT transit time */
    double SOI3betaEXP;
    double SOI3tauEXP;
    double SOI3rsw;      /* source resistance width scaling factor */
    double SOI3rdw;      /* drain resistance width scaling factor */
    double SOI3minimumFeatureSize;     /* minimum feature size of simulated process technology */
    double SOI3vtex;       /* Extracted threshold voltage */
    double SOI3vdex;       /* Drain bias at which vtex extracted */
    double SOI3delta0;     /* Surface potential factor for vtex conversion */
    double SOI3satChargeShareFactor;     /* Saturation region charge sharing factor */
    double SOI3nplusDoping;     /* Doping concentration of N+ or P+ regions */
    double SOI3rta;     /* thermal resistance area scaling factor */
    double SOI3cta;     /* thermal capacitance area scaling factor */
    double SOI3mexp;    /* exponent for CLM smoothing */

    unsigned SOI3typeGiven  :1;
    unsigned SOI3latDiffGiven   :1;
    unsigned SOI3jctSatCurDensityGiven  :1;
    unsigned SOI3jctSatCurDensity1Given  :1;
    unsigned SOI3jctSatCurGiven :1;
    unsigned SOI3jctSatCur1Given :1;
    unsigned SOI3drainResistanceGiven   :1;
    unsigned SOI3sourceResistanceGiven  :1;
    unsigned SOI3sheetResistanceGiven   :1;
    unsigned SOI3transconductanceGiven  :1;
    unsigned SOI3frontGateSourceOverlapCapFactorGiven    :1;
    unsigned SOI3frontGateDrainOverlapCapFactorGiven :1;
    unsigned SOI3frontGateBulkOverlapCapFactorGiven  :1;
    unsigned SOI3backGateSourceOverlapCapAreaFactorGiven    :1;
    unsigned SOI3backGateDrainOverlapCapAreaFactorGiven :1;
    unsigned SOI3backGateBulkOverlapCapAreaFactorGiven  :1;
    unsigned SOI3subsBiasFactorGiven  :1;
    unsigned SOI3bodyFactorGiven      :1;
    unsigned SOI3vt0Given   :1;
    unsigned SOI3vfbFGiven  :1;
    unsigned SOI3vfbBGiven  :1;
    unsigned SOI3gammaGiven :1;
    unsigned SOI3gammaBGiven :1;
    unsigned SOI3capBDGiven :1;
    unsigned SOI3capBSGiven :1;
    unsigned SOI3sideWallCapFactorGiven   :1;
    unsigned SOI3bulkJctPotentialGiven  :1;
    unsigned SOI3bulkJctSideGradingCoeffGiven   :1;
    unsigned SOI3fwdCapDepCoeffGiven    :1;
    unsigned SOI3phiGiven   :1;
    unsigned SOI3lambdaGiven    :1;
    unsigned SOI3thetaGiven     :1;
    unsigned SOI3substrateDopingGiven   :1;
    unsigned SOI3gateTypeGiven  :1;
    unsigned SOI3frontFixedChargeDensityGiven   :1;
    unsigned SOI3backFixedChargeDensityGiven   :1;