📄 jfet2.c
字号:
/**********Based on jfet.c Copyright 1990 Regents of the University of California. All rights reserved.Author: 1985 Thomas L. QuarlesModified to add PS model and new parameter definitions ( Anthony E. Parker ) Copyright 1994 Macquarie University, Sydney Australia. 10 Feb 1994: Parameter definitions called from jfetparm.h Extra state vectors added to JFET2pTable**********/#include "ngspice.h"#include "ifsim.h"#include "devdefs.h"#include "jfet2defs.h"#include "suffix.h"IFparm JFET2pTable[] = { /* device parameters */ IOPU("off", JFET2_OFF, IF_FLAG, "Device initially off"), IOPAU("ic", JFET2_IC, IF_REALVEC,"Initial VDS,VGS vector"), IOPU("area", JFET2_AREA, IF_REAL, "Area factor"), IOPU("m", JFET2_M, IF_REAL, "Parallel Multiplier"), IOPAU("ic-vds", JFET2_IC_VDS, IF_REAL, "Initial D-S voltage"), IOPAU("ic-vgs", JFET2_IC_VGS, IF_REAL, "Initial G-S volrage"), IOPU("temp", JFET2_TEMP, IF_REAL, "Instance temperature"), IOPU("dtemp", JFET2_DTEMP, IF_REAL, "Instance temperature difference"), OPU("drain-node", JFET2_DRAINNODE, IF_INTEGER,"Number of drain node"), OPU("gate-node", JFET2_GATENODE, IF_INTEGER,"Number of gate node"), OPU("source-node", JFET2_SOURCENODE, IF_INTEGER,"Number of source node"), OPU("drain-prime-node", JFET2_DRAINPRIMENODE, IF_INTEGER,"Internal drain node"), OPU("source-prime-node",JFET2_SOURCEPRIMENODE,IF_INTEGER,"Internal source node"), OP("vgs", JFET2_VGS, IF_REAL, "Voltage G-S"), OP("vgd", JFET2_VGD, IF_REAL, "Voltage G-D"), OP("ig", JFET2_CG, IF_REAL, "Current at gate node"), OP("id", JFET2_CD, IF_REAL, "Current at drain node"), OP("is", JFET2_CS, IF_REAL, "Source current"), OP("igd", JFET2_CGD, IF_REAL, "Current G-D"), OP("gm", JFET2_GM, IF_REAL, "Transconductance"), OP("gds", JFET2_GDS, IF_REAL, "Conductance D-S"), OP("ggs", JFET2_GGS, IF_REAL, "Conductance G-S"), OP("ggd", JFET2_GGD, IF_REAL, "Conductance G-D"), OPU("qgs", JFET2_QGS, IF_REAL, "Charge storage G-S junction"), OPU("qgd", JFET2_QGD, IF_REAL, "Charge storage G-D junction"), OPU("cqgs", JFET2_CQGS, IF_REAL, "Capacitance due to charge storage G-S junction"), OPU("cqgd", JFET2_CQGD, IF_REAL, "Capacitance due to charge storage G-D junction"), OPU("p", JFET2_POWER,IF_REAL, "Power dissipated by the JFET2"), OPU("vtrap",JFET2_VTRAP,IF_REAL, "Quiescent drain feedback potential"), OPU("vpave",JFET2_PAVE, IF_REAL, "Quiescent power dissipation"),};IFparm JFET2mPTable[] = { /* model parameters */ OP("type", JFET2_MOD_TYPE, IF_STRING, "N-type or P-type JFET2 model"), IOP("njf", JFET2_MOD_NJF, IF_FLAG,"N type JFET2 model"), IOP("pjf", JFET2_MOD_PJF, IF_FLAG,"P type JFET2 model"), IOPR("vt0", JFET2_MOD_VTO, IF_REAL,"Threshold voltage"), IOPR("vbi", JFET2_MOD_PB, IF_REAL,"Gate junction potential"),#define PARAM(code,id,flag,ref,default,descrip) IOP(code,id,IF_REAL,descrip),#define PARAMA(code,id,flag,ref,default,descrip) IOPA(code,id,IF_REAL,descrip),#include "jfet2parm.h" OPU("gd", JFET2_MOD_DRAINCONDUCT, IF_REAL,"Drain conductance"), OPU("gs", JFET2_MOD_SOURCECONDUCT,IF_REAL,"Source conductance"), IOPU("tnom", JFET2_MOD_TNOM, IF_REAL,"parameter measurement temperature"),};char *JFET2names[] = { "Drain", "Gate", "Source"};int JFET2nSize = NUMELEMS(JFET2names);int JFET2pTSize = NUMELEMS(JFET2pTable);int JFET2mPTSize = NUMELEMS(JFET2mPTable);int JFET2iSize = sizeof(JFET2instance);int JFET2mSize = sizeof(JFET2model);
⌨️ 快捷键说明
复制代码
Ctrl + C
搜索代码
Ctrl + F
全屏模式
F11
切换主题
Ctrl + Shift + D
显示快捷键
?
增大字号
Ctrl + =
减小字号
Ctrl + -