diotemp.c

ngspice又一个电子CAD仿真软件代码.功能更全

/**********
Copyright 1990 Regents of the University of California.  All rights reserved.
Author: 1985 Thomas L. Quarles
Modified: 2000 AlansFixes
Modified by Dietmar Warning 2003 and Paolo Nenzi 2003
**********/

    /* perform the temperature update to the diode */

#include "ngspice.h"
#include "cktdefs.h"
#include "diodefs.h"
#include "const.h"
#include "sperror.h"
#include "suffix.h"

int
DIOtemp(GENmodel *inModel, CKTcircuit *ckt)
{
    DIOmodel *model = (DIOmodel*)inModel;
    double xfc, xfcs;
    double vte;
    double cbv;
    double xbv;
    double xcbv;
    double tol;
    double vt;
    double vtnom;
    double difference;
    double factor;
    DIOinstance *here;
    int iter;
    char *emsg;

    /*  loop through all the diode models */
    for( ; model != NULL; model = model->DIOnextModel ) {
        if(!model->DIOnomTempGiven) {
            model->DIOnomTemp = ckt->CKTnomTemp;
        }
        vtnom = CONSTKoverQ * model->DIOnomTemp;
        /* limit grading coeff to max of .9 */
        if(model->DIOgradingCoeff>.9) {
            (*(SPfrontEnd->IFerror))(ERR_WARNING,
                    "%s: grading coefficient too large, limited to 0.9",
                    &(model->DIOmodName));
            model->DIOgradingCoeff=.9;
        }
        /* limit activation energy to min of .1 */
        if(model->DIOactivationEnergy<.1) {
            (*(SPfrontEnd->IFerror))(ERR_WARNING,
                    "%s: activation energy too small, limited to 0.1",
                    &(model->DIOmodName));
            model->DIOactivationEnergy=.1;
        }
        /* limit depletion cap coeff to max of .95 */
        if(model->DIOdepletionCapCoeff>.95) {
            (*(SPfrontEnd->IFerror))(ERR_WARNING,
                    "%s: coefficient Fc too large, limited to 0.95",
                    &(model->DIOmodName));
            model->DIOdepletionCapCoeff=.95;
        }
	/* limit sidewall depletion cap coeff to max of .95 */
        if(model->DIOdepletionSWcapCoeff>.95) {
            (*(SPfrontEnd->IFerror))(ERR_WARNING,
                    "%s: coefficient Fcs too large, limited to 0.95",
                    &(model->DIOmodName));
            model->DIOdepletionSWcapCoeff=.95;
        }
        if((!model->DIOresistGiven) || (model->DIOresist==0)) {
            model->DIOconductance = 0.0;
        } else {
            model->DIOconductance = 1/model->DIOresist;
        }
        xfc=log(1-model->DIOdepletionCapCoeff);
	xfcs=log(1-model->DIOdepletionSWcapCoeff);
	
        for(here=model->DIOinstances;here;here=here->DIOnextInstance) {
            double egfet1,arg1,fact1,pbfact1,pbo,gmaold,pboSW,gmaSWold;
            double fact2,pbfact,arg,egfet,gmanew,gmaSWnew;
	    
	    if (here->DIOowner != ARCHme) continue;

            /* loop through all the instances */
            
	    if(!here->DIOdtempGiven) here->DIOdtemp = 0.0;
	    
	    if(!here->DIOtempGiven) 
	        here->DIOtemp = ckt->CKTtemp + here->DIOdtemp;		
		
           /* Junction grading temperature adjust */
	   difference = here->DIOtemp - model->DIOnomTemp;
	   factor = 1.0 + (model->DIOgradCoeffTemp1 * difference)
                        + (model->DIOgradCoeffTemp2 * difference * difference);
           here->DIOtGradingCoeff = model->DIOgradingCoeff * factor;
	   
	   /* limit temperature adjusted grading coeff 
	* to max of .9 
	*/
          if(here->DIOtGradingCoeff>.9) {
              (*(SPfrontEnd->IFerror))(ERR_WARNING,
                    "%s: temperature adjusted grading coefficient too large, limited to 0.9",
                    &(here->DIOname));
              here->DIOtGradingCoeff=.9;
              }		
		
            vt = CONSTKoverQ * here->DIOtemp;
            /* this part gets really ugly - I won't even try to
         * explain these equations */
            fact2 = here->DIOtemp/REFTEMP;
            egfet = 1.16-(7.02e-4*here->DIOtemp*here->DIOtemp)/
                    (here->DIOtemp+1108);
            arg = -egfet/(2*CONSTboltz*here->DIOtemp) +
                    1.1150877/(CONSTboltz*(REFTEMP+REFTEMP));
            pbfact = -2*vt*(1.5*log(fact2)+CHARGE*arg);
            egfet1 = 1.16 - (7.02e-4*model->DIOnomTemp*model->DIOnomTemp)/
                    (model->DIOnomTemp+1108);
            arg1 = -egfet1/(CONSTboltz*2*model->DIOnomTemp) + 
                    1.1150877/(2*CONSTboltz*REFTEMP);
            fact1 = model->DIOnomTemp/REFTEMP;
            pbfact1 = -2 * vtnom*(1.5*log(fact1)+CHARGE*arg1);

            pbo = (model->DIOjunctionPot-pbfact1)/fact1;
            gmaold = (model->DIOjunctionPot -pbo)/pbo;
            here->DIOtJctCap = model->DIOjunctionCap/
                    (1+here->DIOtGradingCoeff*
                    (400e-6*(model->DIOnomTemp-REFTEMP)-gmaold) );
            here->DIOtJctPot = pbfact+fact2*pbo;
            gmanew = (here->DIOtJctPot-pbo)/pbo;
            here->DIOtJctCap *= 1+here->DIOtGradingCoeff*
                    (400e-6*(here->DIOtemp-REFTEMP)-gmanew);
            pboSW = (model->DIOjunctionSWPot-pbfact1)/fact1;
            gmaSWold = (model->DIOjunctionSWPot -pboSW)/pboSW;
            here->DIOtJctSWCap = model->DIOjunctionSWCap/
                    (1+model->DIOgradingSWCoeff*
                    (400e-6*(model->DIOnomTemp-REFTEMP)-gmaSWold) );
            here->DIOtJctSWPot = pbfact+fact2*pboSW;
            gmaSWnew = (here->DIOtJctSWPot-pboSW)/pboSW;
            here->DIOtJctSWCap *= 1+model->DIOgradingSWCoeff*
                    (400e-6*(here->DIOtemp-REFTEMP)-gmaSWnew);

            here->DIOtSatCur = model->DIOsatCur *  exp( 
                    ((here->DIOtemp/model->DIOnomTemp)-1) *
                    model->DIOactivationEnergy/(model->DIOemissionCoeff*vt) +
                    model->DIOsaturationCurrentExp/model->DIOemissionCoeff*
                    log(here->DIOtemp/model->DIOnomTemp) );
            here->DIOtSatSWCur = model->DIOsatSWCur *  exp( 
                    ((here->DIOtemp/model->DIOnomTemp)-1) *
                    model->DIOactivationEnergy/(model->DIOemissionCoeff*vt) +
                    model->DIOsaturationCurrentExp/model->DIOemissionCoeff*
                    log(here->DIOtemp/model->DIOnomTemp) );

            /* the defintion of f1, just recompute after temperature adjusting
             * all the variables used in it */
            here->DIOtF1=here->DIOtJctPot*
                    (1-exp((1-here->DIOtGradingCoeff)*xfc))/
                    (1-here->DIOtGradingCoeff);
            /* same for Depletion Capacitance */
            here->DIOtDepCap=model->DIOdepletionCapCoeff*
                    here->DIOtJctPot;
            /* and Vcrit */
            vte=model->DIOemissionCoeff*vt;
            
            here->DIOtVcrit=vte*
                          log(vte/(CONSTroot2*here->DIOtSatCur*here->DIOarea));
            
            /* and now to copute the breakdown voltage, again, using
             * temperature adjusted basic parameters */
            if (model->DIObreakdownVoltageGiven){
                cbv=model->DIObreakdownCurrent*here->DIOarea*here->DIOm;
                if (cbv < here->DIOtSatCur*here->DIOarea*here->DIOm *
                          model->DIObreakdownVoltage/vt) {
                    cbv=here->DIOtSatCur*here->DIOarea*here->DIOm * 
                        model->DIObreakdownVoltage/vt;
                    emsg = MALLOC(100);
                    if(emsg == (char *)NULL) return(E_NOMEM);
                    (void)sprintf(emsg,
                    "%%s: breakdown current increased to %g to resolve",
                            cbv);
                    (*(SPfrontEnd->IFerror))(ERR_WARNING,emsg,&(here->DIOname));
                    FREE(emsg);
                    (*(SPfrontEnd->IFerror))(ERR_WARNING,
                    "incompatibility with specified saturation current",(IFuid*)NULL);
                    xbv=model->DIObreakdownVoltage;
                } else {
                    tol=ckt->CKTreltol*cbv;
                    xbv=model->DIObreakdownVoltage-vt*log(1+cbv/
                            (here->DIOtSatCur*here->DIOarea*here->DIOm));
                    iter=0;
                    for(iter=0 ; iter < 25 ; iter++) {
                        xbv=model->DIObreakdownVoltage-vt*log(cbv/
                                (here->DIOtSatCur*here->DIOarea*here->DIOm)+1-xbv/vt);
                        xcbv=here->DIOtSatCur*here->DIOarea*here->DIOm * 
                             (exp((model->DIObreakdownVoltage-xbv)/vt)-1+xbv/vt);
                        if (fabs(xcbv-cbv) <= tol) goto matched;
                    }
                    emsg = MALLOC(100);
                    if(emsg == (char *)NULL) return(E_NOMEM);
                    (void)sprintf(emsg,
                    "%%s: unable to match forward and reverse diode regions: bv = %g, ibv = %g",
                            xbv,xcbv);
                    (*(SPfrontEnd->IFerror))(ERR_WARNING,emsg,&here->DIOname);
                    FREE(emsg);
                }
                matched:
                here->DIOtBrkdwnV = xbv;
            }
	    
	    /* transit time temperature adjust */
	    difference = here->DIOtemp - model->DIOnomTemp;
	    factor = 1.0 + (model->DIOtranTimeTemp1 * difference) 
	                 + (model->DIOtranTimeTemp2 * difference * difference);
	    here->DIOtTransitTime = model->DIOtransitTime * factor;	
	
	    /* Series resistance temperature adjust */
	    here->DIOtConductance = model->DIOconductance;
	    if(model->DIOresistGiven && model->DIOresist!=0.0) {
                difference = here->DIOtemp - model->DIOnomTemp;
	        factor = 1.0 + (model->DIOresistTemp1) * difference
		             + (model->DIOresistTemp2 * difference * difference);
	        here->DIOtConductance = model->DIOconductance / factor;
            }
	    
            here->DIOtF2=exp((1+here->DIOtGradingCoeff)*xfc);
            here->DIOtF3=1-model->DIOdepletionCapCoeff*
                    (1+here->DIOtGradingCoeff);
            here->DIOtF2SW=exp((1+model->DIOgradingSWCoeff)*xfcs);
            here->DIOtF3SW=1-model->DIOdepletionSWcapCoeff*
                    (1+model->DIOgradingSWCoeff);
	
	} /* instance */
       		
    } /* model */
    return(OK);
}