ams06.rul

MicroWind第2代

MICROWIND v2.00
*
* Rule file for 
* AMS 0.6 祄 release D - Nov 98 
* CMOS 3-metal
*
* 19 Dec 97
* 10 Dec 98  add 3rd level
* 28 Dec 98 technology parameters
* 22 Fev 99 ctk parameters
*
NAME AMS 0.6祄 - 3 Metal
*
lambda = 0.3     (Lambda is set to half the lithography)
metalLayers = 3  (Number of metal layers : 5)
*
* Design rules associated to each layer
*
* Well
r101 = 10    (well width)
r102 = 16    (well spacing)
*
* Diffusion
*
r201 = 3     (diffusion width)
r202 = 4     (diffusion spacing)
r203 = 6     (border of nwell on diffp)
r204 = 6     (nwell to next diffn)
r205 = 5     (diffn to diffp)
* Poly
r301 = 2     (poly width)
r302 = 2     (ngate width)
r303 = 2     (pgate width)
r304 = 3     (poly spacing)
r305 = 1     (spacing poly and unrelated diff)
r306 = 4     (width of drain and source diff)
r307 = 2     (extra gate poly)
* Contact
r401 = 2     (contact width)
r402 = 3     (contact spacing)
r403 = 2     (metal border for contact)
r404 = 2     (poly border for contact)
r405 = 2     (diff border for contact)
* Metal
r501 = 3    (metal width)
r502 = 3    (metal spacing)
* Via
r601 = 2    (Via width)
r602 = 3    (Spacing)
r603 = 3    (To unrelated contact)
r604 = 2    (border of metal&metal2)
*   metal 2
r701 = 3    (Metal 2 width)
r702 = 3    (spacing)
* Via2
r801 = 2    (Via2 width)
r802 = 3    (Spacing)
r803 = 3    (To unrelated contact)
r804 = 2    (border of metal2&metal3)
*   metal 3
r901 = 4    (Metal 3 width)
r902 = 4    (spacing)
*
* Pads
*
rp01 = 335 (Pad width)
rp02 = 335  (Pad spacing)
rp03 = 10   (Border of Via for passivation )
rp04 = 23   (Border of metals)
rp05 = 62   (to unrelated active areas)
*
*
* Thickness of layers
*
thox = 0.015
thpoly = 0.4
thdn = 0.6
thdp = 0.6
thep = 10
hepoly = 0.3
thme = 0.7
heme = 1.1
thm2 = 1.0
hem2 = 2.8
thm3 = 1.2
hem3 = 4.8
thpass = 1.0
hepass = 6.0
thnit = 0.8
henit = 6.8
*
* Resistance (ohm / square)
*
repo = 30
reco = 20
reme = 0.1
revi = 0.5
rem2 = 0.04
rev2 = 0.5
rem3 = 0.03
*
* Parasitic capacitances
*
cpoOxyde = 2800 (Surface capacitance Poly/Thin oxyde aF/祄2)
cpobody = 53    (Poly/Body)
cmebody = 40
cmelineic = 20   (aF/祄)
cmepoly = 52
cm2body = 56
cm2lineic = 20  (aF/祄)
cm2poly = 20
cm2metal = 50
cm3metal = 30
*
* Crosstalk
*
cmextk = 10      (Lineic capacitance for crosstalk coupling in aF/祄/祄)
cm2xtk = 10      (C is computed using Cx=cmextk*l/spacing)
cm3xtk = 10
*
* Junction capacitances
*
cdnpwell = 350   (n+/psub)
cdpnwell = 400  (p+/nwell)
cnwell = 100    (nwell/psub)
cpwell = 100    (pwell/nsub)
cldn = 300      (Lineic capacitance N+/P- aF/鎚)
cldp = 300      (Idem for P+/N-)
*
* Nmos Model 3 parameters
*
NMOS
l3vto = 0.8
l3vmax = 130e3
l3gamma = 0.7
l3theta = 0.2
l3kappa = 0.01
l3phi = 0.7
l3ld = 0.01
l3kp = 140e-6
l3nss = 0.07
l3cgd = 300
*
* Pmos Model 3
*
PMOS
l3vto = -0.9
l3vmax = 100e3
l3gamma = 0.45
l3theta = 0.2
l3kappa = 0.04
l3phi = 0.7
l3ld = -0.05
l3kp = 42e-6
l3nss = 0.07
l3cgd = 300
*
* MicroWind simulation parameters
*
deltaT = 3.0e-12   (Minimum simulation interval dT)
vdd = 5.0
temperature = 27
riseTime = 0.1  (typical rise/fall time)
*
* CIF&GDS2
* MicroWind name, Cif name, Gds2 n