hcmos8l3.rul

MicroWind第2代

MICROWIND 2.0
*
* Rule File for HCMOS8, ST Microelectronics
* Date : 18 May 98 by Etienne Sicard
* Date : 27 April 99 By Etienne/Fabrice
*
*
* status : preliminary
*
NAME ST 0.18祄 - 6 Metal Al, Low K=3
*
lambda = 0.1     (Lambda is set to half the gate size)
metalLayers = 6  (Number of metal layers : 6)
lowK = 3.0       (inter-metal oxide)
*
* Design rules associated to each layer
*
* Well (Gds2 level 1)
r101 = 10    (well width)
r102 = 11    (well spacing)
*
* Diffusion (N+ 16, P+ 17, active 2)
*
r201 = 4     (diffusion width)
r202 = 4     (diffusion spacing)
r203 = 6     (border of nwell on diffp)
r204 = 6     (nwell to next diffn)
*
* Poly (13)
*
r301 = 2     (poly width)
r302 = 2     (ngate width)
r303 = 2     (pgate width)
r304 = 3     (poly spacing)
r305 = 1     (spacing poly and unrelated diff)
r306 = 4     (width of drain and source diff)
r307 = 2     (extra gate poly)
* Contact (19)
r401 = 2     (contact width)
r402 = 3     (contact spacing)
r403 = 2     (metal border for contact)
r404 = 2     (poly border for contact)
r405 = 2     (diff border for contact)
*  metal (23)
r501 = 3    (metal width)
r502 = 4    (metal spacing)
*  via  (25)
r601 = 3    (Via width)
r602 = 4    (Spacing)
r604 = 2    (border of metal&metal2)
*  metal 2 (27)
r701 = 3    (Metal 2 width)
r702 = 4    (spacing)
*  via 2 (32)
r801 = 3    (Via width)
r802 = 4    (Spacing)
r804 = 2    (border of metal2&metal3)
*  metal 3 (34)
r901 = 3    (width)
r902 = 4    (spacing)
*  via 3 (35)
ra01 = 3    (Via width)
ra02 = 4    (Spacing)
ra04 = 2    (border of metal3&metal4)
*  metal 4 (36)
rb01 = 3    (width)
rb02 = 4    (spacing)
*  via 4 (52)
rc01 = 3    (Via width)
rc02 = 4    (Spacing)
rc04 = 2    (border of metal4&metal5)
*  metal 5 (53)
rd01 = 8    (width)
rd02 = 8    (spacing)
*  via 5 (xx)
re01 = 5    (Via width)
re02 = 5    (Spacing)
re04 = 2    (border of metal5&metal6)
*  metal 6 (xx)
rd01 = 8    (width)
rd02 = 15   (spacing)
*
* Passivation nitride (31) and pad rules
*
rp01 = 800  (Pad width)
rp02 = 800  (Pad spacing)
rp03 = 40   (Border of Vias)
rp04 = 40   (Border of metals)
rp05 = 200  (to unrelated active areas)
*
* Thickness of conductors for process aspect
* All in 祄
*
thpoly = 0.20
hepoly = 0.35
thdn = 0.5
thdp = 0.5
thnw = 1.2
thep = 4.0
thme = 0.6
heme = 1.3
thm2 = 0.6
hem2 = 2.8
thm3 = 0.6
hem3 = 4.4
thm4 = 0.6
hem4 = 6.1
thm5 = 1.0
hem5 = 7.7
thm6 = 1.0
hem6 = 9.6
thpass = 0.5
hepass = 10.6
thnit = 0.6
henit = 11.2
*
* Resistances Copper
* Unit is ohm/square
*
repo = 4
reco = 2
reme = 0.15
revi = 1
rem2 = 0.06
rev2 = 2
rem3 = 0.06
rev3 = 23
rem4 = 0.06
rev4 = 1
rem5 = 0.03
rev5 = 1
rem6 = 0.03
*
*
* Parasitic capacitances
*
cpoOxyde= 4600 (Surface capacitance Poly/Thin oxyde aF/祄2)
cpobody = 80    (Poly/Body)
cmebody = 28
cmelineic = 42
cmepoly = 60
cm2body = 20
cm2lineic = 30
cm2metal = 38
cm3body = 20
cm3lineic = 30
cm4body = 20
cm4lineic = 30
cm5body = 20
cm5lineic = 40
cm6body = 20
cm6lineic = 40
cgsn = 500          ( Gate/source capa of nMOS)
cgsp = 500
*
* Vertical crosstalk
*
cm2me = 50
cm3m2 = 50
cm4m3 = 50
cm5m4 = 50
cm6m5 = 50
*
* Lateral Crosstalk
*
cmextk = 7      (Lineic capacitance for crosstalk coupling in aF/祄)
cm2xtk = 8      (C is computed using Cx=cmextk*l/spacing)
cm3xtk = 8
cm4xtk = 8
cm5xtk = 8
cm6xtk = 8
*
* Junction capacitances
*
cdnpwell = 350  (n+/psub)
cdpnwell = 300  (p+/nwell)
cnwell = 250    (nwell/psub)
cpwell = 100    (pwell/nsub)
cldn = 100      (Lineic capacitance N+/P- aF/祄)
cldp = 100      (Idem for P+/N-)
*
* Nmos Model 3 parameters
*
NMOS
l3vto = 0.40
l3vmax = 130e3
l3gamma = 0.4
l3theta = 0.3
l3kappa = 0.01
l3phi = 0.7
l3ld = 0.01
l3kp = 400e-6
l3nss = 0.07
*
* Pmos Model 3
*
PMOS
l3vto = -0.40
l3vmax = 100e3
l3gamma = 0.4
l3theta = 0.3
l3kappa = 0.01
l3phi = 0.7
l3ld = 0.01
l3kp = 150e-6
l3nss = 0.07
*
* MM9 Model parameters
*
* Nmos MM9
*
NMOS
vtor = 0.40
slvto = 0.01e-6
swvto = 0.0e-6
lap = 0.021e-6
wot = 0.033e-6
kor = 0.51
slko = -0.07e-6
swko = 0.05e-6
ler = 10e-6
wer = 10e-6
phib = 0.65
betsq = 400e-6
zet1 = 0.35
mor = 0.368
gamo = 0.010
slgamo = 0e-6
gam1 = 0.034
slgam1 = -0.5e-6
swgam1 = 0.05e-6
the1 = 0.12
slthe1 = 0.10e-6
swthe1 = 0.00e-6
the2 = 0.13
slthe2 = -0.02e-6
swthe2 = 0.06e-6
the3 = 0.06
slthe3 = 0.06e-6
swthe3 = -0.08e-6
vsbtr = 0.156
vsbxr = 2.0
*
* Pmos MM9
*
PMOS
vtor = 0.40
slvto = 0.0
swvto = 0.0
lap = 0.017e-6
wot = 4.5e-8
kor = 0.48
slko = -3.2e-8
swko = 7.6e-9
ler = 10e-6
wer = 10e-6
betsq = 160e-6
zet1 = 1.43
mor = 0.33
phib = 0.65
gamo = 0.010
slgamo = 2.6e-15
gam1 = 0.045
slgam1 = -0.1e-6
swgam1 = 0.0
the1 = 0.44
slthe1 = 0.072e-6
swthe1 = -5e-8
the2 = 0.25
slthe2 = -3.67e-8
swthe2 = 3.0e-8
the3 = 0.002
slthe3 = 0.43e-8
swthe3 = 2.0e-8
vsbtr = 0.156
vsbxr = 0.073
*
* CIF & Gds2 Layers
* MicroWind layer, CIF layer, Gds2 layer, overetch
*
cif nwell 1 1 0.0
cif diffp 17 17 0.5
cif diffn 16 16 0.5
cif aarea 2 2 0.5
cif poly 13 13 0.0
cif contact 19 19 0.025
cif metal 23 23 0.0125
cif via 25 25 0.0125
cif metal2 27 27 0.0125
cif via2 32 32 0.0125
cif metal3 24 34 0.0125
cif via3 35 35 0.0125
cif metal4 36 36 0.0125
cif via4 52 52 0.0125
cif metal5 53 53 0.0
cif via5 54 54 0.0
cif metal6 55 55 0.0
cif passiv 31 31 0.0
cif text 56 56 0.0
*
*
* MicroWind simulation parameters
*
deltaT = 1.0e-12   (Minimum simulation interval dT)
vdd = 2.0
temperature = 27
*
* End ST HCMOS8 0.18 祄
*
*