ams08.rul

MicroWind第2代

MICROWIND v2
*
* Rule file for
* AMS 0.8 祄
* CMOS 2-metal
*
* 19 Dec 97
* 10 Jan 99 : fit crosstalk capa
* 11 Mar 99 : r203, r204 to 6 lambda (Is it 8?)
* 22 Avr 99 : r605 distance via contact
* 27 Avr 99 : Cmetal2Body lower, r201,r202,r203,r204, overetch diff
*
NAME AMS 0.8祄 - 2 Metal
*
lambda = 0.4     (Lambda is set to half the lithography)
metalLayers = 2  (Number of metal layers : 5)
*
* Design rules associated to each layer
*
* Well
r101 = 13    (well width)
r102 = 18    (well spacing)
*
* Diffusion
*
r201 = 5     (diffusion width)
r202 = 6     (diffusion spacing, mainly due to P+ implant)
r203 = 8     (border of nwell on diffp)
r204 = 8     (nwell to next diffn)
r205 = 5     (diffn to diffp)
* Poly
r301 = 2     (poly width)
r302 = 2     (ngate width)
r303 = 2     (pgate width)
r304 = 3     (poly spacing)
r305 = 1     (spacing poly and unrelated diff)
r306 = 4     (width of drain and source diff)
r307 = 2     (extra gate poly)
* Contact
r401 = 2     (contact width)
r402 = 3     (contact spacing)
r403 = 2     (metal,diff,poly border for contact)
* Metal
r501 = 3    (metal width)
r502 = 3    (metal spacing)
* Via
r601 = 3    (Via width)
r602 = 3    (Spacing)
r603 = 3    (To unrelated contact)
r604 = 2    (border of metal&metal2)
r605 = 2    (distance via poly)
*   metal 2
r701 = 3    (Metal 2 width)
r702 = 3    (spacing)
*
* Pads
*
rp01 = 300 (Pad width)
rp02 = 300  (Pad spacing)
rp03 = 8    (Border of Via for passivation )
rp04 = 18   (Border of metals)
rp05 = 45   (to unrelated active areas)
*
*
* Thickness of layers
*
thoxide = 0.015
thpoly = 0.4
hepoly = 0.5
thme = 0.6
heme = 1.1
thm2 = 1.0
hem2 = 2.5
thpass = 0.5
hepass = 3.0
thnit = 0.5
henit = 3.5
*
* Resistance (ohm / square)
*
repo = 25
reme = 0.07
rem2 = 0.040
*
* Parasitic capacitances
*
cpoOxyde = 2100 (Surface capacitance Poly/Thin oxyde aF/祄2)
cpobody = 66    (Poly/Body)
cmebody = 40
cmelineic = 30   (aF/祄)
cm2body = 20
cm2lineic = 20  (aF/祄)
*
* Vertical crosstalk (aF/祄2)
*
cmepoly = 52
cm2metal = 50
*
* Lateral Crosstalk (aF/祄)
*
cmextk = 10      (Lineic capacitance for metal crosstalk coupling )
cm2xtk = 10      (at 4 lambda spacing)
*
* Junction capacitances
*
cdnpwell = 350   (n+/psub)
cdpnwell = 400  (p+/nwell)
cnwell = 100    (nwell/psub)
cpwell = 100    (pwell/nsub)
cldn = 300      (Lineic capacitance N+/P- aF/鎚)
cldp = 300      (Idem for P+/N-)
*
* Nmos Model 3 parameters
*
NMOS
l3vto = 0.8
l3vmax = 130e3
l3gamma = 0.7
l3theta = 0.18
l3kappa = 0.03
l3phi = 0.7
l3ld = 0.06
l3kp = 110e-6
l3nss = 0.07
l3cgd = 300
*
* Pmos Model 3
*
PMOS
l3vto = -0.8
l3vmax = 100e3
l3gamma = 0.45
l3theta = 0.18
l3kappa = 0.04
l3phi = 0.7
l3ld = -0.05
l3kp = 36e-6
l3nss = 0.07
l3cgd = 300
*
* MicroWind simulation parameters
*
deltaT = 5.0e-12   (Minimum simulation interval dT)
vdd = 5.0
temperature = 27
*
* CIF&GDS2
* MicroWind name, Cif name, Gds2 n