time.rul

MicroWind第2代

MICROWIND 2.00
*
* Rule File for TIME CMOS 0.25祄
* Date : 07 Nov 98
*
* Status : preliminary
*
NAME Siemens HL CMOS 0.25祄 - 3 Metal
*
lambda = 0.15     (Lambda is set to half the gate size)
metalLayers = 3  (Number of metal layers : 3)
*
* Design rules associated to each layer
*
* Well 
r101 = 10    (well width)
r102 = 11    (well spacing)
*
* Diffusion 
*
r201 = 4     (diffusion width)
r202 = 4     (diffusion spacing)
r203 = 6     (border of nwell on diffp)
r204 = 6     (nwell to next diffn)
*
* Poly 
*
r301 = 2     (poly width)
r302 = 2     (ngate width)
r303 = 2     (pgate width)
r304 = 3     (poly spacing)
r305 = 1     (spacing poly and unrelated diff)
r306 = 4     (width of drain and source diff)
r307 = 2     (extra gate poly)
* Contact
r401 = 2     (contact width)
r402 = 3     (contact spacing)
r403 = 2     (metal border for contact)
r404 = 2     (poly border for contact)
r405 = 2     (diff border for contact)
*  metal
r501 = 3    (metal width)
r502 = 3    (metal spacing)
*  via  
r601 = 2    (Via width)
r602 = 3    (Spacing)
r604 = 2    (border of metal&metal2)
*  metal 2 
r701 = 4    (Metal 2 width)
r702 = 4    (spacing)
*  via 2 
r801 = 2    (Via width)
r802 = 3    (Spacing)
r804 = 2    (border of metal2&metal3)
*  metal 3 
r901 = 4    (width)
r902 = 4    (spacing)
*
* Passivation nitrideand pad rules
*
rp01 = 550 (Pad width)
rp02 = 550  (Pad spacing)
rp03 = 25   (Border of Vias)
rp04 = 25   (Border of metals)
rp05 = 150  (to unrelated active areas)
*
* Thickness of conductors for FEM computing and process aspect
* All in 祄
*
thpoly = 0.25
hepoly = 0.4
thme = 0.6
heme = 1.0
thm2 = 0.6
hem2 = 2.5
thm3 = 0.6
hem3 = 4.0
thpass = 0.5
hepass = 6.0
thnit = 0.5
henit = 6.5
*
* Resistances
* Unit is ohm/square
*
repo = 20
reme = 0.5
rem2 = 0.1
rem3 = 0.1
*
*
* Parasitic capacitances
*
cpoOxyde= 4600 (Surface capacitance Poly/Thin oxyde aF/祄2)
cpobody = 80    (Poly/Body)
cmebody = 28
cmelineic = 42
cmepoly = 60
cm2body = 13
cm2lineic = 36
cm2poly = 16
cm2metal = 38
cm3body = 8
cm3lineic = 33
cgsn = 500          ( Gate/source capa of nMOS)
cgsp = 500
*
* Crosstalk
*
cmextk = 52      (Lineic capacitance for crosstalk coupling in aF/祄)
cm2xtk = 56      (C is computed using Cx=cmextk*l/spacing)
cm3xtk = 56      (C is computed using Cx=cmextk*l/spacing)
*
* Junction capacitances
*
cdnpwell = 350   (n+/psub)
cdpnwell = 300  (p+/nwell)
cnwell = 250    (nwell/psub)
cpwell = 100    (pwell/nsub)
cldn = 200      (Lineic capacitance N+/P- aF/祄)
cldp = 200      (Idem for P+/N-)
*
* Nmos Model 3 parameters
*
NMOS
l3vto = 0.5
l3vmax = 130e3
l3gamma = 0.4
l3theta = 0.3
l3kappa = 0.01
l3phi = 0.7
l3ld = 0.01
l3kp = 250e-6
l3nss = 0.07
*
* Pmos Model 3
*
PMOS
l3vto = -0.5
l3vmax = 100e3
l3gamma = 0.4
l3theta = 0.3
l3kappa = 0.01
l3phi = 0.7
l3ld = 0.01
l3kp = 70e-6
l3nss = 0.07
*
*
* CIF Layers
* MicroWind layer, CIF in layer, CIF out layer, overetch
*
cif nwell 61 Nwell_d 0.0
cif diffp 37 Nsub 0.25
cif diffn 36 Psub 0.25
cif aarea 42 SDG 0.0
cif poly 47 Poly1 0.0
cif contact 50 Contact 0.0
cif metal 51 Metal1  0.0
cif via 55 Via1 0.0
cif metal2 53 Metal2 0.0
cif via2 39 Via2 0.0
cif metal3 40 Metal3 0.0
cif passiv 32 Passivation 0.0
cif text 53 Text 0.0
*
*
* MicroWind simulation parameters
*
deltaT = 2e-12   (Minimum simulation interval dT)
vdd = 2.5
temperature = 27
*
* End CMOS 0.25 祄
*
*