Erase
共 36 篇文章
Erase 相关的电子技术资料，包括技术文档、应用笔记、电路设计、代码示例等，共 36 篇文章，持续更新中。
Features • Compatible with MCS-51® Products • 8K Bytes of In-System Programmable (ISP
Features
• Compatible with MCS-51® Products
• 8K Bytes of In-System Programmable (ISP) Flash Memory
– Endurance: 1000 Write/Erase Cycles
• 4.0V to 5.5V Operating Range
• Fu
This example demonstrates how to erase, write, and read the on-chip 640-byte EEPROM Data Memory of t
This example demonstrates how to erase, write, and read the on-chip 640-byte EEPROM Data Memory of the Analog Devices ADuC812, ADuC814, ADuC816, and ADuC824 devivces. This example includes a µ Vi
VIP专区-嵌入式/单片机编程源码精选合集系列（82）
<b>VIP专区-嵌入式/单片机编程源码精选合集系列（82）</b><font color="red">资源包含以下内容：</font><br/>1. PIC 18F8680 CAN bus Demo.<br/>2. write erase secure for NXP LPC23XX.<br/>3. 红外遥控器制作专业资料打包,包括TSAL6200,HS0038B等相关设计内容,非常丰富..<b
Abstract: This application note describes the program and data flash and how to erase/write the flas
Abstract: This application note describes the program and data flash and how to erase/write the flash using the built-in utility
ROM. This application note applies to the MAXQ flash-based microcontro
Nand Flash Translation Layer 用于nandflash的操作。 bad block memory map garbage collection average er
Nand Flash Translation Layer
用于nandflash的操作。
bad block
memory map
garbage collection
average erase
嵌入式单片机下可做对Intel flash编程的代码
嵌入式单片机下可做对Intel flash编程的代码，包括erase，program等
This leon3 design is tailored to the Altera NiosII Startix2 Development board, with 16-bit DDR SDR
This leon3 design is tailored to the Altera NiosII Startix2
Development board, with 16-bit DDR SDRAM and 2 Mbyte of SSRAM.
As of this time, the DDR interface only works up to 120 MHz.
At 130, D
STC ISP 功能测试程序
STC ISP 功能测试程序，
包含program /erase/read 程序，
以及测试程序
Embest开发的nor flash读写工程
Embest开发的nor flash读写工程，完成了flash的sector erase,read,write功能，适合嵌入式系统设计初学者。
Name Function --- --- --- --- --- --- Check_SST_39VF160 Check manufacturer and device ID CFI_Que
Name Function
--- --- --- --- --- ---
Check_SST_39VF160 Check manufacturer and device ID
CFI_Query CFI Query Entry/Exit command sequence
Erase_Entire_Chip Erase the contents of the entire chip
E
This program illustrates how to erase, write, and read FLASH memory from application code written i
This program illustrates how to erase, write, and read FLASH memory from
application code written in C . This routine exercises the upper 128-
byte FLASH sector.
/* Check_SST_39VF400A Check manufacturer and device ID /* CFI_Query CFI Query Entry/Exit command se
/* Check_SST_39VF400A Check manufacturer and device ID
/* CFI_Query CFI Query Entry/Exit command sequence
/* Erase_One_Sector Erase a sector of 2048 words
/* Erase_One_Block Erase a block of 32K wo
粒子效果演示(附代码) 利用C++所提供的一些标准容器很容易实现粒子效果. 简单的说就是,将粒子数据写在一个类里面,有一个粒子源,不停地生成粒子,然后放入一个stl::list中(push
粒子效果演示(附代码)
利用C++所提供的一些标准容器很容易实现粒子效果.
简单的说就是,将粒子数据写在一个类里面,有一个粒子源,不停地生成粒子,然后放入一个stl::list中(push_back()方法), 然后在一个循环中遍例粒子链表,并渲染粒子,粒子的参数并不断更新,如果粒子的ALPHA值小于0,即不可见了,即代表粒子已经死亡, 即从list中删去(erase()方法), 销毁
串行编程器源程序(Keil C语言)
<P>串行编程器源程序(Keil C语言)<BR>//FID=01:AT89C2051系列编程器<BR>//实现编程的读，写，擦等细节<BR>//AT89C2051的特殊处:给XTAL一个脉冲，地址计数加1;P1的引脚排列与AT89C51相反，需要用函数转换<BR>#include <e51pro.h></P>
<P>#define C2051_P3_7 P1_0<BR>#d
at91rm9200启动过程教程
<P><STRONG>at91rm9200启动过程教程</STRONG></P>
<P>系统上电，检测BMS，选择系统的启动方式，如果BMS为高电平，则系统从片内ROM启动。AT91RM9200的ROM上电后被映射到了0x0和0x100000处，在这两个地址处都可以访问到ROM。由于9200的ROM中固化了一个BOOTLOAER程序。所以PC从0X0处开始执行这个BOOTLOAER(准确的说应该是
Adding 32 KB of Serial SRAM to
<P>Although Stellaris microcontrollers have generous internal SRAM capabilities, certain applicationsmay have data storage requirements that exceed the 8 KB limit of the Stellaris LM3S8xx seriesdevice